IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT258S-800R
Logic level thyristor
20 March 2014
Product data sheet
1. General description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) surface
mountable plastic package intended for use in applications requiring high bidirectional
blocking voltage capability and high thermal cycling performance. These devices are
intended to be interfaced directly to microcontrollers, logic integrated circuits and other
low power gate trigger circuits.
2. Features and benefits
•
•
•
•
•
•
Direct interfacing with low power drivers and microcontrollers
High bidirectional blocking voltage capability
High thermal cycling performance
Planar passivated for voltage ruggedness and reliability
Sensitive gate suitable for logic level controls
Surface mountable package
3. Applications
•
•
•
•
General purpose switching and phase control
Protection circuits
Ignition circuits, CDI for 2- and 3-wheelers
Motor control - e.g. small kitchen appliances
4. Quick reference data
Table 1.
Symbol
V
DRM
V
RRM
I
TSM
T
j
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
repetitive peak reverse
voltage
non-repetitive peak on- half sine wave; T
j(init)
= 25 °C;
state current
t
p
= 10 ms;
Fig. 4; Fig. 5
junction temperature
RMS on-state current
half sine wave; T
mb
≤ 111 °C;
Fig. 2;
Fig. 3
[1]
DP
AK
Conditions
Min
-
-
-
-
-
Typ
-
-
-
-
-
Max
800
800
75
125
8
Unit
V
V
A
°C
A
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NXP Semiconductors
BT258S-800R
Logic level thyristor
Symbol
I
GT
dV
D
/dt
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 8
V
DM
= 536 V; T
j
= 125 °C; R
GK
= 100 Ω;
(V
DM
= 67% of V
DRM
); exponential
waveform;
Fig. 13
Min
-
Typ
50
Max
200
Unit
µA
Static characteristics
Dynamic characteristics
rate of rise of off-state
voltage
50
100
-
V/µs
[1]
Operation above junction temperatures of 110 °C may require the use of a gate to cathode resistor of 1 kΩ
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
K
A
G
A
cathode
anode
gate
mounting base; connected to
anode
2
1
3
Simplified outline
mb
Graphic symbol
A
G
sym037
K
DPAK (SOT428)
6. Ordering information
Table 3.
Ordering information
Package
Name
BT258S-800R
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
Type number
BT258S-800R
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
20 March 2014
2 / 13
NXP Semiconductors
BT258S-800R
Logic level thyristor
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
non-repetitive peak on-state
current
half sine wave; T
mb
≤ 111 °C;
Fig. 1
half sine wave; T
mb
≤ 111 °C;
Fig. 2;
Fig. 3
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms;
Fig. 4; Fig. 5
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
I t
dI
T
/dt
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
2
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Max
800
800
5
8
75
82
28
50
2
5
5
0.5
150
125
Unit
V
V
A
A
A
A
2
I t for fusing
rate of rise of on-state current
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
[1]
10
P
tot
(W)
8
2
t
p
= 10 ms; sine-wave pulse
I
T
= 10 A; I
G
= 50 mA; dI
G
/dt = 50 mA/
µs
A s
A/µs
A
V
W
W
°C
°C
over any 20 ms period
-
-40
[1]
-
Operation above junction temperatures of 110 °C may require the use of a gate to cathode resistor of 1 kΩ
aaa-008370
105
T
mb(max)
(°C)
109
a = 1.57
1.9
6
4
2.2
2.8
conduction
angle
(degrees)
30
60
90
120
180
0
1
2
3
4
form
factor
a
4
2.8
2.2
1.9
1.57
5
α
113
4
117
2
121
0
I
T(AV)
(A)
6
125
a = Form factor = I
T(RMS)
/I
T(AV)
Fig. 1.
BT258S-800R
Total power dissipation as a function of average on-state current; maximum values
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
20 March 2014
3 / 13
NXP Semiconductors
BT258S-800R
Logic level thyristor
10
I
T(RMS)
(A)
8
aaa-008368
25
I
T(RMS )
(A)
20
aaa-008369
111 °C
6
15
4
10
2
5
0
-50
0
50
100
T
mb
(°C)
150
0
10
-2
10
-1
1
10
surge duration (s)
Fig. 2.
RMS on-state current as a function of mounting
base temperature; maximum values
Fig. 3.
f = 50 Hz; T
mb
= 111 °C
RMS on-state current as a function of surge
duration; maximum values
aaa-008345
100
I
TSM
(A)
80
60
40
I
T
I
TSM
20
t
t
p
T
j(init)
= 25 °C max
0
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT258S-800R
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
20 March 2014
4 / 13
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