IC 4K X 8 UVPROM, 450 ns, CDIP24, WINDOWED, CERAMIC, DIP-24, Programmable ROM
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | National Semiconductor(TI ) |
| 包装说明 | WINDOWED, CERAMIC, DIP-24 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 最长访问时间 | 450 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-GDIP-T24 |
| JESD-609代码 | e0 |
| 内存密度 | 32768 bit |
| 内存集成电路类型 | UVPROM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 24 |
| 字数 | 4096 words |
| 字数代码 | 4000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 4KX8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装代码 | WDIP |
| 封装等效代码 | DIP24,.6 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE, WINDOW |
| 并行/串行 | PARALLEL |
| 峰值回流温度(摄氏度) | NOT SPECIFIED |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 5.715 mm |
| 最大待机电流 | 0.0001 A |
| 最大压摆率 | 0.01 mA |
| 最大供电电压 (Vsup) | 5.25 V |
| 最小供电电压 (Vsup) | 4.75 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 15.24 mm |
| NMC27C32E-45 | NMC27C32H-45 | NMC27C32H-30 | NMC27C32-45 | NMC27C32-30 | NMC27C32H-35 | NMC27C32-55 | |
|---|---|---|---|---|---|---|---|
| 描述 | IC 4K X 8 UVPROM, 450 ns, CDIP24, WINDOWED, CERAMIC, DIP-24, Programmable ROM | IC 4K X 8 UVPROM, 450 ns, CDIP24, WINDOWED, CERAMIC, DIP-24, Programmable ROM | IC 4K X 8 UVPROM, 300 ns, CDIP24, WINDOWED, CERAMIC, DIP-24, Programmable ROM | IC 4K X 8 UVPROM, 450 ns, CDIP24, WINDOWED, CERAMIC, DIP-24, Programmable ROM | IC 4K X 8 UVPROM, 300 ns, CDIP24, WINDOWED, CERAMIC, DIP-24, Programmable ROM | IC 4K X 8 UVPROM, 350 ns, CDIP24, WINDOWED, CERAMIC, DIP-24, Programmable ROM | IC 4K X 8 UVPROM, 550 ns, CDIP24, WINDOWED, CERAMIC, DIP-24, Programmable ROM |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 包装说明 | WINDOWED, CERAMIC, DIP-24 | WDIP, DIP24,.6 | WDIP, DIP24,.6 | WDIP, DIP24,.6 | WDIP, DIP24,.6 | WDIP, DIP24,.6 | WINDOWED, CERAMIC, DIP-24 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 450 ns | 450 ns | 300 ns | 450 ns | 300 ns | 350 ns | 550 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-GDIP-T24 | R-GDIP-T24 | R-GDIP-T24 | R-GDIP-T24 | R-GDIP-T24 | R-GDIP-T24 | R-GDIP-T24 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 32768 bit | 32768 bit | 32768 bit | 32768 bit | 32768 bit | 32768 bit | 32768 bit |
| 内存集成电路类型 | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 24 | 24 | 24 | 24 | 24 | 24 | 24 |
| 字数 | 4096 words | 4096 words | 4096 words | 4096 words | 4096 words | 4096 words | 4096 words |
| 字数代码 | 4000 | 4000 | 4000 | 4000 | 4000 | 4000 | 4000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 85 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 4KX8 | 4KX8 | 4KX8 | 4KX8 | 4KX8 | 4KX8 | 4KX8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
| 封装代码 | WDIP | WDIP | WDIP | WDIP | WDIP | WDIP | WDIP |
| 封装等效代码 | DIP24,.6 | DIP24,.6 | DIP24,.6 | DIP24,.6 | DIP24,.6 | DIP24,.6 | DIP24,.6 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 5.715 mm | 5.715 mm | 5.715 mm | 5.715 mm | 5.715 mm | 5.715 mm | 5.715 mm |
| 最大待机电流 | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A |
| 最大压摆率 | 0.01 mA | 0.01 mA | 0.01 mA | 0.01 mA | 0.01 mA | 0.01 mA | 0.01 mA |
| 最大供电电压 (Vsup) | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V |
| 最小供电电压 (Vsup) | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 宽度 | 15.24 mm | 15.24 mm | 15.24 mm | 15.24 mm | 15.24 mm | 15.24 mm | 15.24 mm |
| 厂商名称 | National Semiconductor(TI ) | - | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) |
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