IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT134-600E
4Q Triac
21 November 2013
Product data sheet
1. General description
Planar passivated sensitive gate four quadrant triac in a SOT82 plastic package intended
for use in general purpose bidirectional switching and phase control applications. This
"series E" sensitive gate triac is intended to be interfaced directly to microcontrollers,
logic integrated circuits and other low power gate trigger circuits.
2. Features and benefits
•
•
•
•
•
•
•
•
Compact package
Direct interfacing to logic level ICs
Direct interfacing to low power gate drive circuits
High blocking voltage capability
Low holding current for low current loads and lowest EMI at commutation
Planar passivated for voltage ruggedness and reliability
Sensitive gate
Triggering in all four quadrants
3. Applications
•
•
•
General purpose low power motor control
Home appliances
Industrial process control
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
mb
≤ 107 °C;
Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
-
2.5
10
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
600
25
4
Unit
V
A
A
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-22
0
AB
NXP Semiconductors
BT134-600E
4Q Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
Min
-
-
-
-
Typ
4
5
11
2.2
Max
10
10
25
15
Unit
mA
mA
mA
mA
I
H
holding current
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
Simplified outline
Graphic symbol
T2
sym051
T1
G
1
2
3
SIP3 (SOT82)
6. Ordering information
Table 3.
Ordering information
Package
Name
BT134-600E
SIP3
Description
plastic single-ended package; 3 leads (in-line)
Version
SOT82
Type number
BT134-600E
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
21 November 2013
2 / 13
NXP Semiconductors
BT134-600E
4Q Triac
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
mb
≤ 107 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
2
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Max
600
4
25
27
3.1
50
50
50
10
2
5
0.5
150
125
Unit
V
A
A
A
2
I2t for fusing
rate of rise of on-state current
t
p
= 10 ms; SIN
I
T
= 6 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G+
I
T
= 6 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G-
I
T
= 6 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G-
I
T
= 6 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G+
A s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
I
GM
P
GM
P
G(AV)
T
stg
T
j
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
-
-40
-
BT134-600E
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© NXP N.V. 2013. All rights reserved
Product data sheet
21 November 2013
3 / 13
NXP Semiconductors
BT134-600E
4Q Triac
5
I
T(RMS)
(A)
4
003aae828
12
I
T(RMS)
(A)
10
003aae830
8
3
6
2
4
1
2
0
- 50
0
50
100
T
mb
(°C)
150
0
10
-2
10
-1
1
10
surge duration
(s)
Fig. 1.
RMS on-state current as a function of mounting
base temperature; maximum values
Fig. 2.
f = 50 Hz
T
mb
≤ 107 °C
RMS on-state current as a function of surge
duration; maximum values
003aae827
conduction form
angle
factor
P
tot
(degrees)
a
(W)
30
4
6
60
2.8
90
2.2
120
1.9
180
1.57
4
8
# = 180°
#
120°
90°
60°
30°
2
0
0
1
2
3
4
I
T(RMS)
(A)
5
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
BT134-600E
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
21 November 2013
4 / 13
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