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JAN2N3737

产品描述Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AB, TO-46, 3 PIN
产品类别分立半导体    晶体管   
文件大小176KB,共5页
制造商Microsemi
官网地址https://www.microsemi.com
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JAN2N3737概述

Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AB, TO-46, 3 PIN

JAN2N3737规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
Objectid2124503323
零件包装代码BCY
包装说明TO-46, 3 PIN
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
最大集电极电流 (IC)1.5 A
集电极-发射极最大电压40 V
配置SINGLE
最小直流电流增益 (hFE)20
JEDEC-95代码TO-206AB
JESD-30 代码O-MBCY-W3
JESD-609代码e0
元件数量1
端子数量3
最高工作温度200 °C
封装主体材料METAL
封装形状ROUND
封装形式CYLINDRICAL
极性/信道类型NPN
认证状态Not Qualified
参考标准MIL-19500/395
表面贴装NO
端子面层TIN LEAD
端子形式WIRE
端子位置BOTTOM
晶体管应用SWITCHING
晶体管元件材料SILICON
最大关闭时间(toff)60 ns
最大开启时间(吨)48 ns

文档预览

下载PDF文档
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/395
DEVICES
LEVELS
2N3735
2N3737
2N3735L
2N3737UB
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25°C
Total Power Dissipation
@ TC = +25°C
2N3735, 2N3735L
2N3737
2N3737UB
2N3735, 2N3735L
2N3737
2N3737UB
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
Min.
40
75
5
1.5
1.0 (1)
0.5 (3)
0.5 (5)
2.9 (2)
1.9 (4)
N/A
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
W
W
W
W
W
W
°C
TO-5*
2N3735L
P
T
T
J
, T
stg
Operating & Storage Junction Temperature Range
* Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding
devices.
(1) Derate linearly at 5.71 mW/°C above T
A
= +25°C
(2) Derate linearly at 16.6 mW/°C above T
A
= +25°C
(3) Derate linearly at 2.86 mW/°C above T
A
= +25°C
(4) Derate linearly at 11.3 mW/°C above T
A
= +25°C
(5) Derate linearly at 3.07 mW/°C above T
A
= +25°C
(6) T
A
= +55°C for UB on printed circuit board (PCB). PCB = FR4 .0625 inch (1.59MM) 1
– layer 1 oz Cu, horizontal, still air, pads (UB) = .034 inch (0.86 mm) x .048 inch (1.2
mm), R
θJA
with a defined thermal resistance condition included is measured at P
T
=
500mW.
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
Collector-Base Cutoff Current
V
CB
= 75Vdc
V
CB
= 30Vd
V
(BR)CEO
I
CBO
40
10
250
Vdc
μAdc
ηAdc
Symbol
Min.
Max.
Unit
TO-39* (TO-205AD)
2N3735
3 PIN
2N3737UB
TO-46 (TO-206AB)
2N3737
Page 1 of 5
T4-LDS-0173 Rev. 1 (101069)

 
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