NTF3055L108,
NVF3055L108
Power MOSFET
3.0 A, 60 V, Logic Level, N−Channel
SOT−223
Designed for low voltage, high speed switching applications in power
supplies, converters and power motor controls and bridge circuits.
Features
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•
NVF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
Applications
3.0 A, 60 V
R
DS(on)
= 120 mW
N−Channel
D
•
•
•
•
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
G
S
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
GS
= 1.0 MW)
Gate−to−Source Voltage
− Continuous
− Non−repetitive (t
p
≤
10 ms)
Drain Current
− Continuous @ T
A
= 25°C (Note 1)
− Continuous @ T
A
= 100°C (Note 2)
− Single Pulse (t
p
≤
10
ms)
Total Power Dissipation @ T
A
= 25°C (Note 1)
Total Power Dissipation @ T
A
= 25°C (Note 2)
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
I
L(pk)
= 7.0 Apk, L = 3.0 mH, V
DS
= 60 Vdc)
Thermal Resistance
−Junction−to−Ambient (Note 1)
−Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Symbol
V
DSS
V
DGR
V
GS
Value
60
60
±
15
±
20
3.0
1.4
9.0
2.1
1.3
0.014
−55
to 175
74
Unit
Vdc
1
4
Vdc
Vdc
Vpk
Adc
2
3
SOT−223
CASE 318E
STYLE 3
MARKING DIAGRAM
I
D
I
D
I
DM
P
D
Apk
Watts
Watts
W/°C
°C
mJ
AYW
3055L = Device Code
3055LG
A
= Assembly Location
G
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
T
J
, T
stg
E
AS
PIN ASSIGNMENT
4
Drain
°C/W
R
qJA
R
qJA
T
L
66
75
260
°C
1
2
3
Gate
Drain
Source
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 1″ pad size, 1 oz.
(Cu. Area 1 in
2
).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2 oz. (Cu. Area 0.272 in
2
).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2014
1
July, 2014 − Rev. 8
Publication Order Number:
NTF3055L108/D
NTF3055L108, NVF3055L108
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250
mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
Gate−Body Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250
mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 5.0 Vdc, I
D
= 1.5 Adc)
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 5.0 Vdc, I
D
= 3.0 Adc)
(V
GS
= 5.0 Vdc, I
D
= 1.5 Adc, T
J
= 150°C)
Forward Transconductance (Note 3)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(V
DS
= 48 Vdc, I
D
= 3.0 Adc,
V
GS
= 5.0 Vdc) (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I
S
= 3.0 Adc, V
GS
= 0 Vdc)
(I
S
= 3.0 Adc, V
GS
= 0 Vdc,
T
J
= 150°C) (Note 3)
V
SD
−
−
t
rr
(I
S
= 3.0 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
t
a
t
b
Q
RR
−
−
−
−
0.87
0.72
35
21
14
0.044
1.0
−
−
−
−
−
mC
ns
Vdc
(V
DD
= 30 Vdc, I
D
= 3.0 Adc,
V
GS
= 5.0 Vdc,
R
G
= 9.1
W)
(Note 3)
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
−
−
−
−
−
−
−
11
35
22
27
7.6
1.4
4.0
25
70
45
60
15
−
−
nC
ns
(V
DS
= 25 Vdc, V
GS
= 0 V,
f = 1.0 MHz)
C
iss
C
oss
C
rss
−
−
−
313
112
40
440
160
60
pF
(V
DS
= 7.0 Vdc, I
D
= 3.0 Adc)
V
GS(th)
1.0
−
R
DS(on)
−
V
DS(on)
−
g
fs
−
0.290
0.250
5.7
0.43
−
−
Mhos
92
120
Vdc
1.68
4.6
2.0
−
Vdc
mV/°C
mW
(V
GS
=
±
15 Vdc, V
DS
= 0 Vdc)
V
(BR)DSS
60
−
I
DSS
−
−
I
GSS
−
−
−
−
1.0
10
±
100
nAdc
68
68
−
−
Vdc
mV/°C
mAdc
Symbol
Min
Typ
Max
Unit
Reverse Recovery Time
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
4. Switching characteristics are independent of operating junction temperatures.
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NTF3055L108, NVF3055L108
TYPICAL ELECTRICAL CHARACTERISTICS
6
V
GS
= 3.4 V
I
D,
DRAIN CURRENT (AMPS)
5
4
3
2
1
0
0
0.5
1
1.5
2
2.5
3
V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
V
GS
= 3.5 V
V
GS
= 4.5 V
V
GS
= 6 V
V
GS
= 10 V
V
GS
= 3.2 V
5
4
3
T
J
= 100°C
2
T
J
= 25°C
1
T
J
= −55°C
0
1
1.5
2
2.5
3
3.5
4
4.5
5
V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
6
V
DS
> = 10 V
V
GS
= 3 V
V
GS
= 2.8 V
V
GS
= 2.5 V
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.16
V
GS
= 5 V
0.14
0.12
0.1
0.08
T
J
= −55°C
0.06
0.04
0.02
0
1
2
3
4
5
6
T
J
= 25°C
T
J
= 100°C
0.16
V
GS
= 10 V
0.14
0.12
0.1
T
J
= 25°C
0.08
0.06
0.04
0.02
0
1
2
3
4
5
6
T
J
= −55°C
T
J
= 100°C
I
D,
DRAIN CURRENT (AMPS)
I
D,
DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1.8
1.6
1.4
1.2
1
0.8
0.6
−50
I
D
= 1.5 A
V
GS
= 5 V
10000
V
GS
= 0 V
1000
T
J
= 150°C
I
DSS
, LEAKAGE (nA)
100
T
J
= 100°C
10
1
−25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (°C)
0
10
20
30
40
50
60
V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
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3
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
NTF3055L108, NVF3055L108
TYPICAL ELECTRICAL CHARACTERISTICS
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
6
5
4
3
2
1
0
0
I
D
= 3 A
T
J
= 25°C
1
2
3
4
5
6
7
8
Q
1
Q
2
Q
T
V
GS
1000
C, CAPACITANCE (pF)
800
600
V
DS
= 0 V
V
GS
= 0 V
T
J
= 25°C
C
iss
C
rss
400
200
C
iss
C
oss
C
rss
0
10
5 V
GS
0 V
DS
5
10
15
20
25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (AMPS)
V
DS
= 30 V
I
D
= 3 A
V
GS
= 5 V
t, TIME (ns)
100
t
r
t
f
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
0.54
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 25°C
10
t
d(off)
t
d(on)
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.58
0.62 0.66
0.7
0.74 0.78 0.82 0.86 0.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
10
100
ms
I
D
, DRAIN CURRENT (AMPS)
1 ms
1
10 ms
0.1
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
dc
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
80
Figure 10. Diode Forward Voltage vs. Current
I
D
= 7 A
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
0.01
0.001
0.1
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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NTF3055L108, NVF3055L108
TYPICAL ELECTRICAL CHARACTERISTICS
r(t), EFFECTIVE TRANSIENT THERMAL
RESPONSE RESISTANCE
100
D = 0.5
0.2
0.1
0.05
0.02
1
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
t, TIME (s)
0.1
1
10
100
1000
10
Figure 13. Thermal Response
ORDERING INFORMATION
Device
NTF3055L108T1G
NVF3055L108T1G
Package
SOT−223 (TO−261)
(Pb−Free)
SOT−223 (TO−261)
(Pb−Free)
Shipping
†
1000 / Tape & Reel
1000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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