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5962R1020502VXC: 产品描述Memory Circuit, 1MX39, CMOS, CQFP132, QFP-132; 产品类别存储存储; 文件大小304KB，共28页; 制造商Cobham PLC

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5962R1020502VXC概述

Memory Circuit, 1MX39, CMOS, CQFP132, QFP-132

5962R1020502VXC规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Cobham PLC
包装说明	GQFF,
Reach Compliance Code	unknown
JESD-30 代码	S-CQFP-F132
长度	23.04 mm
内存密度	40894464 bit
内存集成电路类型	MEMORY CIRCUIT
内存宽度	39
功能数量	1
端子数量	132
字数	1048576 words
字数代码	1000000
工作模式	ASYNCHRONOUS
组织	1MX39
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装代码	GQFF
封装形状	SQUARE
封装形式	FLATPACK, GUARD RING
认证状态	Not Qualified
筛选级别	MIL-PRF-38535 Class V
座面最大高度	8.08 mm
最大供电电压 (Vsup)	2 V
最小供电电压 (Vsup)	1.7 V
标称供电电压 (Vsup)	1.9 V
表面贴装	YES
技术	CMOS
端子形式	FLAT
端子节距	0.635 mm
端子位置	QUAD
总剂量	100k Rad(Si) V
宽度	23.04 mm

5962R1020502VXC相似产品对比

	5962R1020502VXC	UT8R4M39-25XFC	5962R1020701QXC	UT8R1M39-21XPC	5962R1020601VXC	5962R1020602QXC	UT8R4M39-25XPC	UT8R2M39-22XFC	5962R1020601QXC	5962R1020702QXC
描述	Memory Circuit, 1MX39, CMOS, CQFP132, QFP-132	SRAM Module, 4MX39, 25ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132	Memory Circuit, 4MX39, CMOS, CQFP132, QFP-132	SRAM Module, 1MX1, 20ns, CMOS, CQFP132, 0.900 INCH, QFP-132	Memory Circuit, 2MX39, CMOS, CQFP132, QFP-132	Memory Circuit, 2MX39, CMOS, CQFP132, QFP-132	SRAM Module, 4MX39, 25ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132	SRAM Module, 2MX39, 22ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132	SRAM Module, 2MX39, 22ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132	Memory Circuit, 4MX39, CMOS, CQFP132, QFP-132
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
包装说明	GQFF,	GQFP, TPAK132,1.8SQ,25	GQFF, TPAK132,1.8SQ,25	0.900 INCH, QFP-132	GQFF, TPAK132,1.8SQ,25	GQFF, TPAK132,1.8SQ,25	GQFF, TPAK132,1.8SQ,25	GQFF, TPAK132,1.8SQ,25	GQFF, TPAK132,1.8SQ,25	GQFF, TPAK132,1.8SQ,25
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow
JESD-30 代码	S-CQFP-F132	S-CQFP-G132	S-CQFP-F132	S-CQFP-F132	S-CQFP-F132	S-CQFP-F132	S-CQFP-F132	S-CQFP-F132	S-CQFP-F132	S-CQFP-F132
内存密度	40894464 bit	163577856 bit	163577856 bit	1048576 bit	81788928 bit	81788928 bit	163577856 bit	81788928 bit	81788928 bit	163577856 bi
内存集成电路类型	MEMORY CIRCUIT	SRAM MODULE	MEMORY CIRCUIT	SRAM MODULE	MEMORY CIRCUIT	MEMORY CIRCUIT	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE
内存宽度	39	39	39	1	39	39	39	39	39	39
功能数量	1	1	1	1	1	1	1	1	1	1
端子数量	132	132	132	132	132	132	132	132	132	132
字数	1048576 words	4194304 words	4194304 words	1048576 words	2097152 words	2097152 words	4194304 words	2097152 words	2097152 words	4194304 words
字数代码	1000000	4000000	4000000	1000000	2000000	2000000	4000000	2000000	2000000	4000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
组织	1MX39	4MX39	4MX39	1MX1	2MX39	2MX39	4MX39	2MX39	2MX39	4MX39
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装代码	GQFF	GQFP	GQFF	QFF	GQFF	GQFF	GQFF	GQFF	GQFF	GQFF
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	FLATPACK, GUARD RING	FLATPACK, GUARD RING	FLATPACK, GUARD RING	FLATPACK	FLATPACK, GUARD RING	FLATPACK, GUARD RING	FLATPACK, GUARD RING	FLATPACK, GUARD RING	FLATPACK, GUARD RING	FLATPACK, GUARD RING
认证状态	Not Qualified	Not Qualified	Qualified	Not Qualified	Qualified	Qualified	Not Qualified	Not Qualified	Qualified	Qualified
最大供电电压 (Vsup)	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V
最小供电电压 (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
端子形式	FLAT	GULL WING	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
端子位置	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
厂商名称	Cobham PLC	-	-	-	Cobham PLC	Cobham PLC	Cobham PLC	Cobham PLC	Cobham PLC	Cobham PLC
长度	23.04 mm	22.86 mm	23.04 mm	-	23.04 mm	23.04 mm	23.04 mm	23.04 mm	23.04 mm	23.04 mm
筛选级别	MIL-PRF-38535 Class V	38535Q/M;38534H;883B	MIL-PRF-38535 Class Q	-	MIL-PRF-38535 Class V	MIL-PRF-38535 Class Q	MIL-STD-883	MIL-STD-883	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q
座面最大高度	8.08 mm	7.87 mm	8.08 mm	-	8.08 mm	8.08 mm	7.71 mm	7.71 mm	7.71 mm	7.71 mm
标称供电电压 (Vsup)	1.9 V	1.9 V	1.9 V	-	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V
端子节距	0.635 mm	0.635 mm	0.635 mm	-	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm
总剂量	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	-	100k Rad(Si) V	100k Rad(Si) V	-	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V
宽度	23.04 mm	22.86 mm	23.04 mm	-	23.04 mm	23.04 mm	23.04 mm	23.04 mm	23.04 mm	23.04 mm
最长访问时间	-	25 ns	25 ns	20 ns	22 ns	22 ns	25 ns	22 ns	22 ns	25 ns
I/O 类型	-	COMMON	COMMON	-	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
最高工作温度	-	105 °C	105 °C	-	105 °C	105 °C	-	105 °C	105 °C	105 °C
最低工作温度	-	-55 °C	-55 °C	-	-55 °C	-55 °C	-	-55 °C	-55 °C	-55 °C
输出特性	-	3-STATE	3-STATE	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装等效代码	-	TPAK132,1.8SQ,25	TPAK132,1.8SQ,25	-	TPAK132,1.8SQ,25	TPAK132,1.8SQ,25	TPAK132,1.8SQ,25	TPAK132,1.8SQ,25	TPAK132,1.8SQ,25	TPAK132,1.8SQ,25
并行/串行	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
电源	-	1.8,2.5/3.3 V	1.8,2.5/3.3 V	-	1.8,2.5/3.3 V	1.8,2.5/3.3 V	-	1.8,2.5/3.3 V	1.8,2.5/3.3 V	1.8,2.5/3.3 V
最大待机电流	-	0.188 A	0.188 A	-	0.094 A	0.035 A	0.003 A	0.035 A	0.035 A	0.035 A
最小待机电流	-	1 V	1 V	-	1 V	1 V	1 V	1 V	1 V	1 V
最大压摆率	-	0.225 mA	0.225 mA	-	0.225 mA	0.225 mA	0.23 mA	0.225 mA	0.225 mA	0.23 mA
温度等级	-	OTHER	OTHER	-	OTHER	OTHER	-	OTHER	OTHER	OTHER

5962R1020502VXC

5962R1020502VXC概述

5962R1020502VXC规格参数

5962R1020502VXC相似产品对比

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