MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF20030R/D
The RF Sub–Micron Bipolar Line
RF Power Bipolar Transistor
Designed for broadband commercial and industrial applications at frequen-
cies from 1800 to 2000 MHz. The high gain and broadband performance of this
device makes it ideal for large–signal, common–emitter class AB amplifier
applications. Suitable for frequency modulated, amplitude modulated and
multi–carrier base station RF power amplifiers.
•
Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics
Output Power — 30 Watts (PEP)
Power Gain — 9.8 dB
Efficiency — 34%
Intermodulation Distortion — –28 dBc
MRF20030R
30 W, 2.0 GHz
NPN SILICON
BROADBAND
RF POWER TRANSISTOR
ARCHIVE INFORMATION
•
Excellent Thermal Stability
•
Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 30 Watts (PEP)
Output Power
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
•
S–Parameter Characterization at High Bias Levels
•
Designed for FM, TDMA, CDMA, and Multi–Carrier Applications
Note:
Not suitable for class A operation.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Collector–Base Voltage
Collector–Emitter Voltage (R
BE
= 100
Ω)
Emitter–Base Voltage
Collector Current – Continuous
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
CEO
V
CES
V
CBO
V
CER
V
EB
I
C
P
D
T
stg
T
J
CASE 395C–01, STYLE 1
Value
25
60
60
30
–3
4
125
0.71
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction to Case
(1)
(1) Thermal resistance is determined under specified RF operating condition.
Symbol
R
θJC
Max
1.4
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 25 mAdc, I
B
= 0)
Collector–Emitter Breakdown Voltage
(I
C
= 25 mAdc, V
BE
= 0)
Collector–Base Breakdown Voltage
(I
C
= 25 mAdc, I
E
= 0)
REV 1
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
25
60
60
28
70
70
—
—
—
Vdc
Vdc
Vdc
(Replaces MRF20030/D)
MOTOROLA RF
Motorola, Inc. 1999
DEVICE DATA
MRF20030R
1
ARCHIVE INFORMATION
•
Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics
Output Power — 30 Watts
Power Gain — 11 dB
Efficiency — 40%
Intermodulation Distortion — –30 dBc
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Emitter–Base Breakdown Voltage
(I
B
= 5 mAdc, I
C
= 0)
Collector Cutoff Current
(V
CE
= 30 Vdc, V
BE
= 0)
V
(BR)EBO
I
CES
3
—
3.8
—
—
10
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(V
CE
= 5 Vdc, I
CE
= 1 Adc)
h
FE
20
40
80
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 26 Vdc, I
E
= 0, f = 1.0 MHz)
(1)
C
ob
—
28
—
pF
ARCHIVE INFORMATION
Common–Emitter Amplifier Power Gain
(V
CC
= 26 Vdc, P
out
= 30 Watts, I
CQ
= 120 mA,
f
1
= 2000.0 MHz, f
2
= 2000.1 MHz)
Collector Efficiency
(V
CC
= 26 Vdc, P
out
= 30 Watts (PEP), I
CQ
= 120 mA,
f
1
= 2000.0 MHz, f
2
= 2000.1 MHz)
Intermodulation Distortion
(V
CC
= 26 Vdc, P
out
= 30 Watts (PEP), I
CQ
= 120 mA,
f
1
= 2000.0 MHz, f
2
= 2000.1 MHz)
Input Return Loss
(V
CC
= 26 Vdc, P
out
= 30 Watts (PEP), I
CQ
= 125 mA,
f
1
= 2000.0 MHz, f
2
= 2000.1 MHz)
Load Mismatch
(V
CC
= 26 Vdc, P
out
= 30 Watts (PEP), I
CQ
= 120 mA,
f
1
= 2000.0 MHz, f
2
= 2000.1 MHz, Load VSWR = 3:1, All Phase
Angles at Frequency of Test)
Common–Emitter Amplifier Power Gain
(V
CC
= 26 Vdc, P
out
= 30 Watts (PEP), I
CQ
= 125 mA,
f
1
= 1930.0 MHz, f
2
= 1930.1 MHz)
Collector Efficiency
(V
CC
= 26 Vdc, P
out
= 30 Watts (PEP), I
CQ
= 125 mA,
f
1
= 1930.0 MHz, f
2
= 1930.1 MHz)
Intermodulation Distortion
(V
CC
= 26 Vdc, P
out
= 30 Watts (PEP), I
CQ
= 125 mA,
f
1
= 1930.0 MHz, f
2
= 1930.1 MHz)
Input Return Loss
(V
CC
= 26 Vdc, P
out
= 30 Watts (PEP), I
CQ
= 125 mA,
f
1
= 1930.0 MHz, f
2
= 1930.1 MHz)
G
pe
9.8
11
—
dB
η
34
38
—
%
IMD
—
– 30
– 28
dBc
IRL
10
17
—
dB
ψ
No Degradation in Output Power
G
pe
—
11
—
dB
η
—
34
—
%
IMD
—
– 32
—
dBc
IRL
—
14
—
dB
GUARANTEED BUT NOT TESTED
(In Motorola Test Fixture)
Common–Emitter Amplifier Power Gain
(V
CC
= 26 Vdc, P
out
= 30 Watts, I
CQ
= 125 mA, f = 1880 MHz)
Collector Efficiency
(V
CC
= 26 Vdc, P
out
= 30 Watts , I
CQ
= 125 mA, f = 1880 MHz)
Input Return Loss
(V
CC
= 26 Vdc, P
out
= 30 Watts , I
CQ
= 125 mA, f = 1880 MHz)
Output Mismatch Stress
(V
CC
= 25 Vdc, P
out
= 30 Watts, I
CQ
= 125 mA,
f = 1880 MHz, VSWR = 3:1, All Phase Angles at Frequency of Test)
(1) For Information Only. This Part Is Collector Matched.
G
pe
η
IRL
—
—
—
10.5
40
14
—
—
—
dB
%
dB
ψ
Typically No Degradation in Output Power
MRF20030R
2
MOTOROLA RF DEVICE DATA
ARCHIVE INFORMATION
FUNCTIONAL TESTS
(In Motorola Test Fixture)
V
BB
R1
R2
Q2
L1
B1
+
C1
R3
R4
C2
R5
R6
L4
L2
RF
INPUT
Z1
C3
Z2
C4
Z3
C5
Z4
DUT
Z5
C10
Z6
C11
Z7
Z8
C12
RF
OUT
C6
C7
C8
C9
R7
R8
C13
C14
B2
+
L4
V
CC
D1
Q1
ARCHIVE INFORMATION
B1, B2
C1, C13
C2
C3, C5, C12
C4, C11
C6, C8
C7, C9
C10
C14
D1
L1, L4
L2, L3
Ferrite Bead, P/N 5659065/3B, Ferroxcube
0.1
µF,
Chip Capacitor, Kermet
100
µF,
50 V, Electrolytic Capacitor, Mallory
0.6–4 pF, Variable Capacitor, Johanson, Gigatrim
10 pF, B Case Chip Capacitor, ATC
24 pF, B Case Chip Capacitor, ATC
75 pF, B Case Chip Capacitor, ATC
0.4–2.5 pF, Variable Capacitor, Johanson, Gigatrim
470
µF,
63 V, Electrolytic Capacitor, Mallory
Diode, Motorola (MUR3160T3)
12 Turns, 22 AWG, IDIA. 0.195″
0.750″ 20 AWG
N1, N2
R1, R2
R3, R4
R5, R8
R6, R7
Q1
Q2
Board
Type N Flange Mount RF Connector
MA/COM 3052–1648–10
130
Ω,
1/8 W Chip Resistor, Rohm
100
Ω,
1/8 W Chip Resistor, Rohm
10
Ω,
1/2 W Resistor
10
Ω,
1/8 W Chip Resistor, Rohm (10J)
Transistor, PNP Motorola (BD136)
Transistor, NPN Motorola (MJD47)
30 Mil Glass Teflon
, Arlon GX–0300–55–22,
ε
r
= 2.55
Figure 1. Class AB Test Fixture Electrical Schematic
MOTOROLA RF DEVICE DATA
MRF20030R
3
ARCHIVE INFORMATION
TYPICAL CHARACTERISTICS
35
Pout , OUTPUT POWER (WATTS)
30
25
20
15
10
5
0
0
1
P
out
11.5
11
10.5
G pe , GAIN (dB)
10
G
pe
40
Pout , OUTPUT POWER (WATTS)
35 P
in
= 3.5 W
2.5 W
30
25
9.5
9
20
15
10
5
0
1800
1.5 W
V
CC
= 26 Vdc
I
CQ
= 125 mA
f = 2000 MHz Single Tone
3
2
P
in
, INPUT POWER (WATTS)
4
8.5
8
5
V
CC
= 26 Vdc
I
CQ
= 125 mA
1850
1900
f, FREQUENCY (MHz)
1950
2000
ARCHIVE INFORMATION
Figure 2. Output Power & Power Gain
versus Input Power
Figure 3. Output Power versus Frequency
IMD, INTERMODULATION DISTORTION (dBc)
- 30
- 40
- 50
- 60
- 70
3rd Order
11
10.5
G pe , GAIN (dB)
10
G
pe
-10
-15
-20
-25
-30
P
out
= 30 W (PEP)
I
CQ
= 125 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
18
20
IMD
-35
-40
-45
28
5th Order
7th Order
V
CC
= 26 Vdc
I
CQ
= 125 mA
f
1
= 2000.0 MHz
f
2
= 2000.1 MHz
0
5
15
25
10
20
30
P
out
, OUTPUT POWER (WATTS) PEP
35
40
9.5
9
8.5
8
7.5
22
24
26
V
CC
, COLLECTOR SUPPLY VOLTAGE (Vdc)
Figure 4. Intermodulation Distortion
versus Output Power
Figure 5. Power Gain and Intermodulation
Distortion versus Supply Voltage
IMD, INTERMODULATION DISTORTION (dBc)
- 25
- 30
- 35
- 40
- 45 125 mA
- 50
- 55
- 60
0.01
400 mA
0.1
250 mA
V
CC
= 26 Vdc
f
1
= 2000.0 MHz
f
2
= 2000.1 MHz
1.0
10
100
P
out
, OUTPUT POWER (WATTS) PEP
I
CQ
= 75 mA
12
11
G pe , POWER GAIN (dB)
10
9
8
7
6
5
0.01
75 mA
0.1
1.0
125 mA
I
CQ
= 400 mA
250 mA
V
CC
= 26 Vdc
f
1
= 2000.0 MHz
f
2
= 2000.1 MHz
10
100
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion
versus Output Power
Figure 7. Power Gain versus Output Power
MRF20030R
4
MOTOROLA RF DEVICE DATA
IMD, INTERMODULATION DISTORTION (dBc)
- 20
11.5
-5
ARCHIVE INFORMATION
11
10.5
G pe , GAIN (dB)
P
out
= 30 W (PEP)
V
CC
= 26 Vdc
I
CQ
= 125 mA
38
G
pe
36
COLLECTOR EFFICIENCY (%)
INPUT VSWR
10
η
34
1.7:1
9.5
VSWR
1850
1900
f, FREQUENCY (MHz)
1950
32
9
1800
28
2000
1.1:1
ARCHIVE INFORMATION
1.E+10
MTBF FACTOR (HOURS x AMPS 2 )
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E+03
1.E+02
0
50
100
150
200
T
J
, JUNCTION TEMPERATURE (°C)
250
This above graph displays calculated MTBF in hours x ampere
2
emitter current. Life tests at elevated temperatures have correlated
to better than
±10%
of the theoretical prediction for metal failure.
Divide MTBF factor by I
C2
for MTBF in a particular application.
Figure 9. MTBF Factor versus
Junction Temperature
MOTOROLA RF DEVICE DATA
MRF20030R
5
ARCHIVE INFORMATION
Figure 8. Performance in Broadband Circuit
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