20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MJ16010
Designer's™ Data Sheet
MJW16010
MJ16012*
MJW16012
15 AMPERE
NPN SILICON
POWER TRANSISTORS
450 VOLTS
135 AND 175 WATTS
SWITCHMODE Series
NPN Silicon Power Transistors
These transistors are designed for high-voltage, high-speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for
line-operated switchmode applications. The MJ16012 and MJW16012 are selected
high gain versions of the MJ16010 and MJW16010 for applications where drive
current is limited.
Switching Regulators
Inverters
Solenoids
Relay Drivers
Motor Controls
Deflection Circuits
Fast Turn-Off Times — TC = 100°C
50 ns Inductive Fall Time (Typ)
90 ns Inductive Crossover Time (Typ)
800 ns Inductive Storage Time (Typ)
100°C Performance Specified for:
Reverse-Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current — Continuous
-Peak(1)
Base Current — Continuous
-Peak(1)
Total Device Dissipation
@T
C
= 25°C
@Tc = 100°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
MJ 16010
MJ16012
MJW16010
MJW16012
450
850
6.0
15
20
10
15
Unit
Vdc
Vdc
Vdc
Adc
Adc
VCEO
VCEV
VEB
'CM
IG
(TO-3)
MJ16010
MJ16012
IB
IBM
PD
1 75
100
1.0
T
J.
T
stg
Watts
135
538
1.11
-55 to 150
W/°C
°C
-65 to 200
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Lead Temperature for Soldering
Purposes, 1/8" from Case for
5 Seconds
Symbol
Max
1.0
275
0.93
Unit
°C/W
RSJC
T
L
°c
TO-247AE
MJW16010
MJW16012
(1) Pulse Test: Pulse Width s 50 us, Duty Cycle > 10%
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished
by
NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
MJ16010 MJW16O10 MJ16012 MJW16012
ELECTRICAL CHARACTERISTICS
(Tc
=
25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 2)
(1C = 100 mA, IB = 0)
Collector Cutoff Current
(VCEV = 850 Vdc, VBE(off) =
1
-
5
Vdc)
(VCEV = 850 Vdc, V
B
E(off) = 1-5 Vdc, T
C
= 100°C)
Collector Cutoff Current
Symbol
Min
Typ
—
Max
Unit
VCEO(SUS)
'CEV
450
—
Vdc
mAdc
—
I
CER
I
EBO
—
—
—
0.25
1.5
2.5
10
mAdc
mAdc
(VCE = 850 Vdc, RBE = so u, T
C
= ioo°c)
Emitter Cutoff Current
—
—
(VEB = 6.0 Vdc, IG = o)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
ON CHARACTERISTICS (1)
Collector-Emitter Saturation Voltage
(1C = 5.0 Adc, I
B
= 0.7 Adc)
(IC = 10Adc, I
B
= 1.3 Adc)
(l
c
= 10 Adc, I
B
= 1.3 Adc, TC = 100°C)
Base-Emitter Saturation Voltage
(\ =
10 Adc, I
B
= 1.3 Adc)
(1C = 10 Adc, I
B
= 1.3 Adc, T
c
= 100°C)
DC Current Gain
(IC = 15 Adc, VcE = 5.0Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 10 Vdc, IE = 0, ftest = 1 -0 kHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rose Time
Storage Time
Fall Time
Storage Time
Fall Time
Inductive Load (Table 2)
Storage Time
Fall Time
Crossover Time
Storage Time
Fall Time
Crossover Time
(1) Pulse Test: Pulse Width = 300 us, Duty Cycle < 2.0%
IB1 = 1.3 Adc,
VBE(off) = 5.0 Vdc,
VcE(pk) = 400 Vdc)
(T
C
= 100°C)
t
S
V
tfi
tc
v
CE(sat)
'S/b
RBSOA
See Figure 15
See Figure 16
Vdc
—
—
—
—
—
—
2.5
3.0
3.0
Vdc
—
—
1.5
1.5
—
—
v
BE(sat)
hFE
5.0
Cob
—
—
400
PF
td
(1C = 10 Adc,
VCG = 250 Vdc,
'BI ~ 1 3 Adc
PW = 30 us,
Duty Cycle < 2.0%)
(lB2 = 2.6Adc,
R
B2
=1.6fl)
tr
t
s
tf
(VBE(off) = 5-0 Vdc)
«8
tf
—
—
—
—
—
—
—
—
—
—
—
20
200
1200
200
650
80
—
—
—
—
—
—
ns
800
50
90
1050
70
120
1800
200
250
—
—
—
ns
»sv
(T
C
= 150°C)
tfi
tc
MJ16010 MJW16010 MJ16O12 MJW16012
ELECTRICAL CHARACTERISTICS
(TC
=
25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 2)
(IC = 100mA, IB = 0)
Collector Cutoff Current
(VcEV = 850 Vdc, V
BE
(off) = 1 -5 Vdc)
(V
CEV
= 850 Vdc, V
B
E(off) = 1 -5 Vdc. T
c
= 1 00°C)
Collector Cutoff Current
V
CEO(SUS)
Symbol
Min
Typ
Max
Unit
450
—
—
Vdc
!
CEV
mAdc
—
—
—
—
—
—
0.25
1.5
2.5
10
(VCE = 850 Vdc, RBE = so n, T
C
= ioo°c)
Emitter Cutoff Current
!
CER
mAdc
mAdc
<VEB = 6.0 Vdc, i
c
= o)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
ON CHARACTERISTICS (1)
Collector-Emitter Saturation Voltage
(IC = 5.0Adc, !
B
= 0.7Adc)
OC = 10Adc, I
B
= 1.0 Adc)
OC = 10 Adc, |B = 1.0 Adc, TC = 100°C)
Base-Emitter Saturation Voltage
(IC = 10 Adc, IB = 1.0 Adc)
(IC = 10 Adc, |B = 1.0 Adc, TC = 100°C)
DC Current Gain
(IC = 15 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 10Vdc, l
E
= 0,f
tes
t=1.0kHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rose Time
Storage Time
Fall Time
Storage Time
Fall Time
Inductive Load (Table 2)
Storage Time
Fall Time
Crossover Time
Storage Time
Fall Time
Crossover Time
(1) Pulse Test: Pulse Width = 300 us, Duty Cycle < 2.0%
IB1 = 1.0
Adc,
!
EBO
'S/b
RBSOA
See Figure 15
See Figure 16
v
CE(sat)
Vdc
—
—
—
—
—
—
—
—
—
2.5
3.0
3.0
Vdc
—
—
1.5
1.5
—
—
v
BE(sat)
hFE
7.0
Cob
—
—
400
pF
td
(l
c
= 10 Adc,
V
C
c = 250 Vdc,
'B1 ~ 1 0 Adc
PW = 30 us,
Duty Cycle < 2.0%)
(lB2 =
2
-0 Adc,
R
B
2 = 1 .6 £J)
t
r
ts
tf
(VBE(off) = 5.0 Vdc)
ts
tf
—
—
—
—
—
—
—
—
—
—
—
—
20
200
900
150
500
40
—
—
—
—
—
—
ns
tsv
(T
C
= 100°C)
650
30
50
850
30
70
1500
150
200
—
—
ns
tfl
tc
tsv
VBE(off) = 5-0 Vdc,
V/->ir/ i \ 4DO VrtrM
(T
C
= 150°C)
tfi
tc
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