20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
IRFP440
Power MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Isolated Central Mounting Hole
Fast Switching
Ease of Paralleling
Simple Drive Requirements
V
DSS
=500V
R
DS(on)
= 0-85Q
I
D
= 8.8A
The TO-247 package is preferred for commercial-industrial applications
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar but superior to the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage oisiance between pins tc
meet the requirements of most safety specifications.
TO-247AC
Absolute Maximum Ratings
ID 0 Tc = 25°C
ID® T
C
=100°C
I DM
PD @ Tc = 25°C
VGS
EAS
JAR
EAR
dv/dt
Tj
TsTG
Parameter
Continuous Drain Current, VGS @ 10 V
Continuous Drain Current, VGS @ 10 V
Pulsed Drain Current
'&
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy 3>
Avalanche Current
®
Repetitive Avalanche Energy CO
Peak Diode Recovery dv/dt
<S>
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max
8.8
5.6
35
150
1.2
±20
480
8.8
15
3.5
-5510+150
Units
A
W
w/-c
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case)
10lbf.in (1.1 N.m)
Thermal Resistance
ROJC
Rocs
ROJA
I
Parameter
; Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
—
—
—
Typ.
Max.
0.83
°C/W
Units
'
—
0.24
—
40
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IRFP440
Electrical Characteristics @ Tj = 25°C (unless otherwise specified)
V(BH)DSS
AV(BH)DSS/ATj
RnSfonl
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
.
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
500
Typ.
0.78
Max.
Units
V
Test Conditions
V
G
s=OV, I
D
= 250uA
Reference to 25"C, b= 1 mA
Vcs=10V, I
D
=5.3A -'
VDS=VGS. b= 250jiA
V
D
s=50V, lo=5.3A <?•
V
D
s=500V, VGS=OV
V
D
s=400V, Vos=OV, Tj=125"C
V
GS
=20V
V
G
s=-20V
b=8.0A
Vos=400V
V
G
s=1 0V See Fig. 6 and 1 3 <
V
DD
=250V
b=8.0A
RG=9.1£!
Rn=31U See Figure 10 ?
Between lead.
°
6 mm (0.25in.)
(^~¥\d center of
die contact
VGS=OV
s
v/°c
0.85
Q
V
S
flA
4.0
—
Vosah;
gis
2.0
5.3
—
—
—
—
—
—
25
250
100
-100
63
11
30
Qg
Qgs
Qga
nC
td(on)
tr
14
—
—
—
—
23
49
20
5.0
13
1300
31C
—
120
—
nH
-
td(oll)
ti
LD
Ls
C
iss
CQSS
vL_,i
—
—
PF
C,
ss
VDS= 25V
f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter
Min.
—
Typ.
Max.
8.8
A
35
—
—
2.0
V
ns
Units
Is
ISM
VSD
trr
Q,r
ton
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) O
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Test Conditions
D
MOSFET symbol
showing the
/] I—;
5
integral reverse
G
-\ H
S
p-n junction diode.
Tj=25
c
C, I
S
=8.8A, V
G
s=OV ®
Tj=25°C. I
F
=8.0A
460 ; 970
3.5 | 7.6
uC
di/dt= 100 A/us ®
—
Intrinsic turn-on time is negiegible (turn-on is dominated by LS+LD)
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