,
LJnc,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
IRF9240/9241 /9242/924S
IRFP9240/9241 /9242/924S
IRF9640/9641 /9642/9G43
preliminary Specifications
- 200 Volt, 0.5 Ohm SFET
>D
P-CHANNEL
POWER MOSFETS
PRODUCT SUMMARY
Part Number
Vos
RDSIon)
lo
IRF/IRFP9240, IRF9640 -200V
IRF/IRFP9241. IRF9641
-150V
IRF/IRFP9242, IRF9642 -200V
IRF/IRFP9243, IRF9643
-150V
0.50
050
-11A
-11A
-9 OA
-9.0A
/fi~
\
°%
is
FEATURES
• LOW RDSlon)
0 70
070
PACKAGE STYLE
Package Type
TO3
Part Number
IRF9240/924 1 /9242/924S
IRFP9240/924 1 /9242/9243
IRF9640/964 1 /9642/9643
•
•
•
•
»
•
Improved Inductive ruggedness
Fast switching times
Rugged polysllicon gate cell structure
Low Input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3P
TO220
MAXIMUM RATINGS
IRF/I
RFP
Characteristic
Drain-Source Voltage (1)
Drain-Gate Voltage (Ros=1 OMD) (1)
Gale-Source Voltage
Continuous Drain Current Tc = 25°C
Continuous Drain Current Tc=100°C
Drain Current— Pulsed (3)
Gate Current— Pulsed
Total Power Dissipation @ Tc = 25°C
Derate above 25°C
Operating and Storage
Junction Temperature Rangy
Maximum Lead Temp, for Soldering
Purposes, 1/8" from case (or 5 seconds
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
IGM
Po
-11
-70
-44
-11
9240
9640
-200
-200
9241
9641
-150
-150
±20
9242
9642
-200
-200
9243
9643
-150
-150
Unit
Vdc
vac
Vdc
-90
-90
Adc
Adc
Adc
Adc
-7.0
-44
-6.0
-36
-6.0
-36
±1.5
125
1.0
-55 to 150
300
Watts
W/°C
°C
°C
Tj. Tstg
T
L
Notes:
(1) Tj=25°C to 150'C
(2) Pulse lest: Pulse width<300^s. Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IRF9240/9241 /9242/924S
IRFP9240/9241 /9242/924S
IRF9640/9641 /9642/964S
P-CHANNEL
POWER MOSFETS
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise specified)
Characteristic
Symbol Type
Mln
Typ
Max
—
Units
V
V
Test Conditions
V
GS
=OV
ln=— 250uA
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Source Leakage Forward
Gate-Source Leakage Reverse
Zero Gate Voltage
Drain Current
BVoss
IRF9240/2
IRFP9240/2
-200
IRF9640/2
IRF9241/3
[RFP9241/3
-150
IRF9641/3
V
G
S(th)
ALL
ALL
ALL
ALL
-20
-
-
-
~-
-
-
~
-
—
-4.0
-100
v •
VDS=VGS. b=-250^A
nA
V
GS
=-20V
nA
V
GS
=20V
MA
V
D
s=Max. Rating, V
GS
=OV
less
less
loss
100
-250
-1000 MA
V
DS
=Max. RatingXO.8, V
GS
=OV, T
C
=125°C
A
On-State Drain-Source
Current (2)
'O(on)
IRF9240/1
IRFP9240/1
-1 1
IRF9640/1
IRF9642
IRF9643
IRF9240/1
IRFP9240/1
IRF9640/1
VDS>b(on| X Rosion) max. , VGS~ - 1 0V
~~
-9.0
A
Q
Static Drain-Source On-State
Resistance (2)
Forward Transconductance (2)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source Plus Gate-Drain)
Gate-Source Charge
Gate-Drain ("Miller") Charge
0.5
RDS(on)
IRF9242/3
IRFP9242/3
IRF9642/3
V
GS
=-10V, I
D
=-6.0A
0.7
4.0
-
-
-
—
_
—
-
—
-
—
0
0
PF
pF
PF
Vos>b(on) X RoS(on) max , ID — — 6 . OA
Qfs
C
iss
Coss
Crss
td(on)
tr
td|oll|
t|
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
-
-
-
-
—
-
1300
450
250
30
15
VGS=OV, V
D
s=-25V, f= 1.0MHz
ns
—
—
—
-
—
18
12
90
30
60
V
D
D = 0.5BV
D
ss, b = -6.0A, Zo=4.7fJ,
(MOSFET switching times are essentially
ns
independent of operating temperature.)
ns
ns
nC
V
GS
=-15V, I
D
=-22A, V
D
s=0.8 Max.
Rating (Gate charge is essentially independent
nC
of operating temperature )
nC
QQ
Q
9S
Q
0
d
THERMAL RESISTANCE
Junction-to-Case
Case-to-Sink
Junction-to- Ambient
RthJA
RlhJC
ALL
ALL
IRFPXXXX
IRF96XX
IRF92XX
-
-
—
-
1.0
-
1.0
K/W
K/W
Mounting surface flat, smooth, and greased
Rmcs
-
80
30
Free Air Operation
K/W
:
Notes: (1) Tj=25°C to 150°C
(2) Pulse test: Pulse width«300
M
s, Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
IRF9240/9241 /9242/S243
IRFP9240/9241 /9242/924S
IRF9640/9641 /9G42/9643
Characteristic
Symbol
Type
IRF9240/1
IRFP9240/1
IRF9640/1
IRF9242/3
IRFP9242/3
IRF9642/3
IRF9240/1
IRFP9240/1
IRF9640/1
IRF9242/3
IRFP9242/3
IRF9642/3
IRF9240/I
IRFP9240/1
IRF9640/1
IRF9242/3
IRFP9242/3
IRF9642/3
P-CHANNEL
POWER MOSFETS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Min Typ Max
Units
-
—
-
—
-11
-9.0
Test Conditions
A
A
A
A
V
V
Continuous Source Current
(Body Diode)
Ic
-44
Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier
-rt^ff
G-XJy'
^^^s
Pulse Source Current
(Body Diode) (3)
-
—
-
—
-36
-4.6
T
C
= 25°C, I
S
=-11A. V
GS
=OV
T
C
= 25°C, ls=-9.0A, V
G
s=OV
Diode Forward Voltage (2)
V
SD
-4.4
ns
Tj = 1 50°C, I
F
= - 1 1 A,dl
F
/dt= 1 0OA/^s
-
-
-
Notes:
(1) Tj=25°C to 150°C (2) Pulse test: Pulse width«300/js, Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
trr
Reverse Recovery Time
ALL
PD, POWER DISSIPATION (WATTS)
to
J>
(
ooc
i,,.
s
\
\
5
O
o
* 35
\
\
\
40
160
40
60
80
100 120
140
Tc, CASE TEMPERATURE
( C
°)
Power Vs. Temperature Derating Curve
20
M
o
o
o
<?
80
Tj, JUNCTION TEMPERATURE (*C)
Breakdown Voltage Vs. Temperature
3
0
4 0
80
120
I
_L
-15
-30
-45
-60
Tj, JUNCTION TEMPERATURE CO
Normalized On-Reslslance Vs. Temperature
lo. DRAIN CURRENT (AMPERES)
Typical On-Reslstance Vs. Drain Current
9
w
•o
'5
T> •
J
en «.
b o>
Ol
Ol
~ A
J
37.66
38.68
p r
H
M
t
c
••
K> to
o o>
3
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