TN3012L
Vishay Siliconix
N-Channel 300-V (D-S) MOSFET
PRODUCT SUMMARY
V
(BR)DSS
Min (V)
300
r
DS(on)
Max (W)
12 @ V
GS
= 10 V
20 @ V
GS
= 4.5 V
V
GS(th)
(V)
0.8 to 3
I
D
(A)
0.18
FEATURES
D
D
D
D
D
Low On-Resistance: 9
W
Secondary Breakdown Free: 320 V
Low Power/Voltage Driven
Low Input and Output Leakage
Excellent Thermal Stability
BENEFITS
D
D
D
D
D
Low Offset Voltage
Full-Voltage Operation
Easily Driven Without Buffer
Low Error Voltage
No High-Temperature
“Run-Away”
APPLICATIONS
D
High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors, etc.
D
Telephone Mute Switches, Ringer Circuits
D
Power Supply, Converters
D
Motor Control
TO-226AA
(TO-92)
S
1
Device Marking
Front View
“S” TN
3012L
xxyy
“S” = Siliconix Logo
xxyy
= Date Code
3
Top View
G
2
D
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
_
Pulsed Drain
Current
a
T
A
= 25_C
T
A
= 100_C
T
A
= 25_C
T
A
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
Limit
300
"20
0.18
0.14
0.5
0.8
0.32
156
–55 to 150
Unit
V
A
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 70206
S-04279—Rev. C, 16-Jul-01
W
_C/W
_C
www.vishay.com
11-1
TN3012L
Vishay Siliconix
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 10
mA
V
DS
= V
GS
, I
D
= 0.25 mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 120 V, V
GS
= 0 V
T
A
= 125_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 0.18 A
Drain-Source On-Resistance
b
r
DS(on)
V
GS
= 4.5 V, I
D
= 0.14 A
T
A
= 125_C
Forward Transconductance
b
Diode Forward Voltage
g
fs
V
SD
V
DS
= 15 V, I
D
= 0.1 A
I
S
= 0.18 A, V
GS
= 0 V
0.2
0.5
9
11
20
160
0.8
12
20
40
mS
V
W
300
0.8
320
2.1
3.0
"10
0.1
5
mA
m
A
V
nA
Symbol
Test Conditions
Min
Typ
a
Max
Unit
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 50 V, V
GS
= 10 V, I
D
^100
mA
3300
38
1600
40
8
3
pF
pC
Switching
c
t
d(on)
Turn-On Time
t
r
t
d(off)
t
f
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW
v300
ms
duty cycle
v2%.
c. Switching time is essentially independent of operating temperature.
V
DD
= 50 V, R
L
= 500
W
, I
D
^100
mA
V
GEN
= 10 V, R
G
= 25
W
5
20
25
30
10
40
ns
50
60
VNAS30
Turn-Off Time
www.vishay.com
11-2
Document Number: 70206
S-04279—Rev. C, 16-Jul-01
TN3012L
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
1.0
V
GS
= 10, 8 V
6V
0.8
I D – Drain Current (A)
I D – Drain Current (A)
5V
0.6
0.8
125_C
0.6
T
A
= –55_C
1.0
25_C
Transfer Characteristics
0.4
4V
0.2
3V
0
0
4
8
12
16
20
V
DS
– Drain-to-Source Voltage (V)
0.4
0.2
0
0
2
4
6
8
10
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Gate-Source Voltage
20
16
On-Resistance vs. Drain Current
r DS(on) – On-Resistance (
W
)
r DS(on) – On-Resistance (
W
)
16
V
GS
= 4.5 V
12
V
GS
= 10 V
12
I
D
= 0.5 A
8
I
D
= 0.1 A
8
4
4
0
0
4
8
12
16
20
V
GS
– Gate-to-Source Voltage (V)
0
0
0.2
0.4
0.6
0.8
1.0
I
D
– Drain Current (A)
On-Resistance vs. Junction Temperature
2.5
5
Threshold Voltage Variance Over Temperature
r DS(on) – On-Resistance (
W
)
(Normalized)
V GS(th) – Threshold Voltage (V)
2.0
4
1.5
3
I
D
= 1 mA
2
1.0
0.5
1
0
–50
–25
0
25
50
75
100
125
150
0
–50
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature (_C)
Document Number: 70206
S-04279—Rev. C, 16-Jul-01
T
J
– Junction Temperature (_C)
www.vishay.com
11-3
TN3012L
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Capacitance
200
10
I
D
= 0.1 A
V GS – Gate-to-Source Voltage (V)
160
C – Capacitance (pF)
8
Gate Charge
120
6
V
DS
= 150 V
4
80
C
iss
40
C
oss
C
rss
0
0
10
20
30
40
50
V
DS
– Drain-to-Source Voltage (V)
2
0
0
500
1000
1500
2000
2500
3000
3500
Q
g
– Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
0.2
T
J
= 150_C
0.1
I S – Source Current (A)
T
J
= 25_C
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
V
SD
– Source-to-Drain Voltage (V)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
10
30
Square Wave Pulse Duration (sec)
www.vishay.com
11-4
Document Number: 70206
S-04279—Rev. C, 16-Jul-01
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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