ISSUED DATE :2005/03/25
REVISED DATE :2005/10/21B
GBC556
Description
&
Complementary
PNP SILICON TRANSISTOR
The GBC556 is designed for drive and output-stages of audio amplifiers.
Features
&
DC Current Gain: 120~800 @V
CE
=-5V, I
C
=-2mA
High
to GBC546
D
Package Dimensions
E
S1
TO-92
A
S E A T IN G
PLANE
b1
L
REF.
A
S
1
b
b
1
C
e1
e
b
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150
1.390
2.42
2.66
Absolute Maximum Ratings
(T
A
=25 : )
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (continuous)
Total Device Dissipation @ T
A
=25 :
Derate above 25 :
Total Device Dissipation @ T
C
=25 :
Derate above 25 :
Operating and Storage Junction Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
T
J
,
T
stg
R
JA
R
JC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Ratings
-80
-65
-5
-100
625
5.0
1.5
12
-55 ~ +150
200
83.3
Unit
V
V
V
mA
mW
mW/ :
W
mW/ :
:
: /W
: /W
Electrical Characteristics
(T
A
= 25 : unless otherwise noted)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CES
*V
CE(sat)
1
*V
CE(sat)
2
*V
BE(sat)
1
*V
BE(sat)
2
*V
BE(on)
1
*V
BE(on)
2
*h
FE
fT
Cob
Min.
-80
-65
-5
-
-
-
-
-
-0.55
-
120
-
-
Typ.
-
-
-
-
-0.075
-0.25
-0.7
-1.0
-0.62
-0.7
-
280
3.0
Max.
-
-
-
-100
-0.3
-0.65
-
-
-0.7
-0.82
800
-
6.0
Unit
V
V
V
nA
V
V
V
V
V
V
MHz
pF
Test Conditions
I
C
=-100uA, I
E
=0
I
C
=-2mA, I
B
=0
I
E
=-100uA, I
C
=0
V
CE
=-40V, V
BE
=0
I
C
=-10mA, I
B
=-0.5mA
I
C
=-100mA, I
B
=-5mA
I
C
=-10mA, I
B
=-0.5mA
I
C
=-100mA, I
B
=-5mA
V
CE
=-5V, I
C
=-2mA
V
CE
=-5V, I
C
=-10mA
V
CE
=-5V, I
C
=-2mA
V
CE
=-5V, I
C
=-10mA, f=100MHz
V
CB
=-10V, I
C
=0, f=1MHz
*Pulse Test: Pulse Width
380 s, Duty Cycle 2%
Classification Of h
FE
Rank
Range
A
120 ~ 220
B
180 ~ 460
C
420 ~ 800
GBC556
Page: 1/2
ISSUED DATE :2005/03/25
REVISED DATE :2005/10/21B
Characteristics Curve
Fig 1. DC Current Gain
Fig 2. Collector Saturation Region
Fig 3. “On” Voltages
Fig 4. Temperature Coefficients
Fig 5. Capacitances
Fig 6. Bandwidth Product
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan:
No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China:
(201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GBC556
Page: 2/2
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