Operating Temperature Range .......................... -40°C to +85°C
Junction Temperature .....................................................+150°C
Storage Temperature Range............................ -65°C to +150°C
Soldering Temperature (reflow) ......................................+260°C
PACKAGE THERMAL CHARACTERISTICS (Note 1)
WLP
Junction-to-Ambient Thermal Resistance (q
JA
) ..........73°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
Note 2:
This device is constructed using a unique set of packaging techniques that impose a limit on the thermal profile the device
can be exposed to during board-level solder attach and rework. This limit permits only the use of the solder profiles
recommended in the industry-standard specification, JEDEC 020A, paragraph 7.6, Table 3 for IR /VPR and convection
reflow. Preheating is required. Hand or wave soldering is not allowed.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
IN1
= V
IN2
= V
IN3
= 3.7V, V
PGND
= V
AGND
= 0V, L = 0.47µH, C
OUT
= 4.7µF, T
A
= -40°C to +85°C. Typical values are at
T
A
= +25°C, unless otherwise noted.) (Note 3)
PARAMETER
GENERAL
IN1, IN2, IN3 Operating Voltage
IN1, IN2, IN3 Undervoltage Lockout
(UVLO) Threshold
IN1, IN2, IN3 UVLO Hysteresis
IN1, IN2, IN3 Shutdown Supply
Current
STEP-DOWN DC-DC CONVERTER
IN1, IN2, IN3 No-Load Supply
Current
Output Capacitance Required for
Stability
Output Inductance Required for
Stability
Startup Time from Shutdown
V
OUT
= 0.5V, no load, skip mode operation
V
OUT
= 0.5V, no load, PWM operation
V
OUT
= 3V, no load, PWM operation
V
OUT
= 0.5V to V
IN1
, I
OUT
= 0A to 1A
V
OUT
= 0.5V to V
IN1
, I
OUT
= 0A to 1A
From V
EN
= low to V
EN
= high, V
OUT
= 0.5V
0.1
0.22
30
450
3.5
8
0.47
10
1.0
FA
mA
FF
FH
Fs
V
EN
= V
AGND
= 0V or V
IN_
is
below UVLO threshold
T
A
= +25NC
T
A
= +85NC
IN1, IN2, IN3 falling (enter power-down mode and
disable the output)
2.5
2.10
2.20
100
0.1
0.1
1
5.5
2.30
V
V
mV
FA
CONDITIONS
MIN
TYP
MAX
UNITS
Maxim Integrated
2
MAX77178/MAX77179
High-Bandwidth LTE/WCDMA PA Power Management ICs
in a 1.75mm x 1.4mm, 0.4mm Pitch WLP
ELECTRICAL CHARACTERISTICS (continued)
(V
IN1
= V
IN2
= V
IN3
= 3.7V, V
PGND
= V
AGND
= 0V, L = 0.47µH, C
OUT
= 4.7µF, T
A
= -40°C to +85°C. Typical values are at
T
A
= +25°C, unless otherwise noted.) (Note 3)
PARAMETER
Output Transition Time (MAX77179)
Output Transition Time (MAX77178)
Maximum Output Current
High-Side Current-Limit Threshold
Low-Side Current-Limit Threshold
Low-Side Negative Current-Limit
Threshold
Low-Side Zero-Cross Threshold
V
OUT
> 1.6V,
V
MODE_SEL
= V
IN3
1V
P
V
OUT
P
1.6V,
V
MODE_SEL
= V
IN3
LX High-Side On-Resistance
IN1/IN2 to LX,
I
LX
= -200mA
V
OUT
< 1V,
V
MODE_SEL
= V
IN3
V
OUT
> 1.8V,
V
MODE_SEL
= V
AGND
V
OUT
P
1.8V,
V
MODE_SEL
= V
AGND
V
OUT
> 1.6V,
V
MODE_SEL
= V
IN3
1V
P
V
OUT
P
1.6V,
V
MODE_SEL
= V
IN3
LX Low-Side On-Resistance
LX to PGND,
I
LX
= -200mA
V
OUT
< 1V,
V
MODE_SEL
= V
IN3
V
OUT
> 1.8V,
V
MODE_SEL
= V
AGND
V
OUT
P
1.8V,
V
MODE_SEL
= V
AGND
LX Leakage Current
V
IN_
= V
LX
= 5.5V,
V
EN
= 0V
T
A
= +25NC
T
A
= +85NC
-2.0
CONDITIONS
Rise time when V
OUT
transitions from 0.5V to 3.4V,
I
OUT
= 1A, C
OUT
= 4.7FF, L = 0.47FH
Rise time when V
OUT
transitions from 0.8V to 3.4V,
I
OUT
= 500mA, C
OUT
= 4.7FF, L = 0.47FH
1
1.2
0.8
0.7
40
90
135
192
135
360
75
110
150
110
290
0.03
0.24
68
80
89
93
%
+2.0
FA
mI
130
mI
160
2.0
1.65
1.8
MIN
TYP
0.33
0.33
MAX
UNITS
V/Fs
V/Fs
A
A
A
A
mA
V
IN1
= 3.6V, V
OUT
= 0.7V, I
OUT
= 16mA
Efficiency
V
IN1
= 3.6V, V
OUT
= 1.3V, I
OUT
= 50mA
V
IN1
= 3.6V, V
OUT
= 2.2V, I
OUT
= 300mA
V
IN1
= 3.6V, V
OUT
= 3.0V, I
OUT
= 500mA
Maxim Integrated
3
MAX77178/MAX77179
High-Bandwidth LTE/WCDMA PA Power Management ICs
in a 1.75mm x 1.4mm, 0.4mm Pitch WLP
ELECTRICAL CHARACTERISTICS (continued)
(V
IN1
= V
IN2
= V
IN3
= 3.7V, V
PGND
= V
AGND
= 0V, L = 0.47µH, C
OUT
= 4.7µF, T
A
= -40°C to +85°C. Typical values are at
T
A
= +25°C, unless otherwise noted.) (Note 3)
PARAMETER
LX Rise Time
Output-Voltage Line Regulation
Line Regulation Transient Response
Output-Voltage Load Regulation
Load Regulation Transient Response
Operating Frequency
Automatic Bypass Mode Entry
Threshold
Automatic Bypass Mode Entry
Hysteresis
Automatic Bypass Mode Exit
Debounce Time
Minimum Duty Cycle
Maximum Duty Cycle
Output-Voltage Ripple
PROTECTION CIRCUITS
Thermal Shutdown
Thermal Shutdown Hysteresis
CONTROL
REF Input Voltage Range
REF to OUT Gain Accuracy
REF to OUT Absolute Accuracy
(MAX77179)
Output Voltage Range (MAX77179)
MAX77179, analog control voltage
MAX77179, V
REF
= 1V, gain = V
OUT
/V
REF
V
REF
= 1V, I
OUT
= 0
Controlled by the REF input
V
REF
= 0V, skip mode operation
T
A
= +25NC
T
A
= -40NC to +85NC
0
-2.5
-3
-3.5
0.5
0.1
V
IN3
- 0.3
+2.5
+3
+3.5
V
IN
V
%
%
V
160
20
NC
NC
C
OUT
= 4.7FF, ESR of C
OUT
< 20mI, f
SW
= 8MHz,
I
OUT
= 10mA to 1A, V
OUT
= 1.8V, PWM mode
Skip mode, I
OUT
= 0mA
5
45
Skip mode
PWM mode
V
IN
= 2.5V to 5.5V, I
OUT
= 100mA, V
OUT
= 1.8V
V
IN1
(DC) = 3.6V
RMS
, V
IN1
(AC) = 300mV
P-P
ripple
at 10Hz to 270kHz, I
OUT
= 500mA, V
OUT
= 3.0V
I
OUT
= 0 to 1A
t
RISE
= t
FALL
= 1.5Fs, I
OUT
= 0.2A to 1A,
V
OUT
= 3.0V
V
OUT
= 1.8V, I
OUT
= 0A, PWM
V
IN
- V
OUT
, when the drop between V
IN
and V
OUT
becomes less than this threshold, high-side FET is
turned on continuously
6
CONDITIONS
MIN
TYP
1
1.3
25
-1.5
25
8
0.125
10
MAX
UNITS
ns
%/V
mV
P-P
%/A
mV
P-P
MHz
V
40
5
0
10
100
mV
Fs
%
%
mV
P-P
Maxim Integrated
4
MAX77178/MAX77179
High-Bandwidth LTE/WCDMA PA Power Management ICs
in a 1.75mm x 1.4mm, 0.4mm Pitch WLP
ELECTRICAL CHARACTERISTICS (continued)
(V
IN1
= V
IN2
= V
IN3
= 3.7V, V
PGND
= V
AGND
= 0V, L = 0.47µH, C
OUT
= 4.7µF, T
A
= -40°C to +85°C. Typical values are at
T
A
= +25°C, unless otherwise noted.) (Note 3)
PARAMETER
CONDITIONS
V
SEL1
= 0, V
SEL0
= 0,
V
OUT
= 2.9V
V
SEL1
= 0, V
SEL0
= 1,
V
OUT
= 2.325V
V
SEL1
= 1, V
SEL0
= 1,
V
OUT
= 1.7V
V
SEL1
= 1, V
SEL0
= 0,
V
OUT
= 1.0V
REF Input Current
REF Input Capacitance
Analog Gain Setting Range
Logic-Input High Voltage
Logic-Input Low Voltage
Logic-Input Pulldown Resistor
Select Debounce Delay
MAX77179, V
REF
= 1V
MAX77179
MAX77179 (Note 4)
V
IN_
= 2.5V to 5.5V, V
SEL_
,V
BYP
, V
MODE_SEL
, V
EN
V
IN_
= 2.5V to 5.5V, V
SEL_
, V
BYP
, V
MODE_SEL
, V
EN
SEL0, SEL1, MODE_SEL, BYP
t
EN_DEBOUNCE
, SEL0 or SEL1(MAX77178), BYP
or MODE_SEL (MAX77179)
Not production tested,
650MHz to 2.2GHz, 30kHz
resolution bandwidth
V
IN
= 3.6V,
V
OUT
= 3V;
I
OUT
= 200mA,
400mA, 600mA
800
500
1.2
0.4
T
A
= +25NC
T
A
= -40NC to +85NC
T
A
= +25NC
T
A
= -40NC to +85NC
T
A
= +25NC
T
A
= -40NC to +85NC
T
A
= +25NC
T
A
= -40NC to +85NC
T
A
= +25NC
T
A
= +85NC
-2.5
Q3
0.1
1
5
2.5
1
FA
pF
V/V
V
V
kI
ns
-2
Q3
+2.5
-2
Q3
+2
MIN
-2
Q3
+2
%
TYP
MAX
+2
UNITS
Output Voltage Accuracy
(MAX77178)
Output Noise
-105
dBm/
Hz
Note 3:
All devices are 100% production tested at T
A
= +25°C. Limits over the operating temperature range are guaranteed
by design.
Note 4:
Factory programmable parameter. Contact the factory for options.
编译自semiengineering 业界越来越关注人工智能的功耗问题，但这个问题并没有简单的解决方案。这需要深入了解应用、半导体和系统层面的软件和硬件架构，以及所有这些的设计和实现方式。每个环节都会影响总功耗和提供的效用。这是最终必须做出的权衡。 但首先，必须解决效用问题。电力是否被浪费了？“我们将电力用于有价值的用途，”Ansys（现为新思科技旗下公司）产品营销总监 Marc Swi...[详细]
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