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TMD2771
DIGITAL ALS
and PROXIMITY MODULE
TAOS143B − SEPTEMBER 2012
Features
D
Ambient Light Sensing, Proximity
Detection, and IR LED in a Single Optical
Module
V
DD
1
SCL 2
GND 3
LEDA 4
PACKAGE
MODULE−8
(TOP VIEW)
8 SDA
7 INT
6 LDR
D
Ambient Light Sensing (ALS)
−
−
−
−
Approximates Human Eye Response
Programmable Analog Gain
Programmable Integration Time
Programmable Interrupt Function with
Upper and Lower Threshold
− Up to 16 Bits Resolution
− Very High Sensitivity — Operates Behind
Darkened Glass
− Up to 1,000,000:1 Dynamic Range
Package Drawing is Not to Scale
D
I
2
C Interface Compatible
D
Proximity Detection
−
−
−
−
Calibrated to 100-mm Detection
Eliminates
Factory Calibration
of Prox
Programmable Number of IR Pulses
Programmable Current Sink for the IR
LED — No Limiting Resistor Needed
− Programmable Interrupt Function with
Upper and Lower Threshold
D
Programmable Wait Timer
− Wait State — 65
mA
Typical Current
− Programmable from 2.72 ms
to > 8 Seconds
Description
The TMD2771 family of devices provides digital ambient light sensing (ALS), a complete proximity detection
system, and digital interface logic in a single 8-pin package. The proximity detector includes a digital proximity
sensor, LED driver, and IR LED, which are trimmed to eliminate the need for end-equipment calibration due to
component variations. Excellent background light rejection allows the device to operate in environments from
sunlight to dark rooms. The wide dynamic range allows for operation in short distance detection such as a cell
phone (behind dark glass). An internal state machine provides the ability to put the device into a low-power mode
in between ALS and proximity measurements, providing very low average power consumption.
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The device is particularly useful for display management with the purpose of extending battery life and providing
optimum viewing in diverse lighting conditions. Display panel and keyboard backlighting can account for up to
30 to 40 percent of total platform power. The ALS features are ideal for use in notebook PCs, LCD monitors,
flat-panel televisions, and cell phones.
The proximity function specifically targets near-field proximity applications. In cell phones, the proximity
detection can detect when the user positions the phone close to their ear. The device is fast enough to provide
proximity information at a high repetition rate needed when answering a phone call. This provides both improved
green
power saving capability and the added security to lock the computer when the user is not present. The
addition of the micro-optics lenses within the device, provide highly efficient transmission and reception of
infrared energy, which lowers overall power dissipation.
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Applications
D
D
D
D
D
Cell Phone Backlight Dimming
Cell Phone Touch Screen Disable
Notebook/Monitor Security
Automatic Speakerphone Enable
Automatic Menu Popup
− Up to 400 kHz (I
2
C Fast Mode)
D
Dedicated Interrupt Pin
D
3.94 mm
y
2.4 mm
y
1.35 mm Package
D
Sleep Mode — 2.5
mA
Typical
Texas Advanced Optoelectronic Solutions Inc.
1001 Klein Road
S
Suite 300
S
Plano, TX 75074
S
(972) 673-0759
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Copyright
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2012, TAOS Inc.
TMD2771
DIGITAL ALS
and PROXIMITY MODULE
TAOS143B − SEPTEMBER 2012
Functional Block Diagram
LDR
V
DD
IR LED Constant
Current Sink
Prox Control
Prox
Integration
LEDA
Prox
ADC
Prox
Data
Lower Limit
Upper Limit
Interrupt
INT
Upper Limit
CH0
ADC
CH0
Data
LEDK
Detailed Description
The light-to-digital device provides on-chip photodiodes, integrating amplifiers, ADCs, accumulators, clocks,
buffers, comparators, a state machine, and an I
2
C interface. Each device combines one photodiode (CH0),
which is responsive to both visible and infrared light, and a second photodiode (CH1), which is responsive
primarily to infrared light. Two integrating ADCs simultaneously convert the amplified photodiode currents to
a digital value providing up to 16-bits of resolution. Upon completion of the conversion cycle, the conversion
result is transferred to the Ch0 and Ch1 data registers. This digital output can be read by a microprocessor
where the luminance (ambient light level in lux) is derived using an empirical formula to approximate the human
eye response.
A fully integrated proximity detection solution is provided with an 850-nm IR LED, LED driver circuit, and
proximity detection engine. An internal LED driver (LDR) pin, is connected to the LED cathode (LEDK) to provide
a factory calibrated proximity of 100 mm,
±
20 mm. This is accomplished with a proprietary current calibration
technique that accounts for all variances in silicon, optics, package, and most important, IR LED output power.
This eliminates or greatly reduces the need for factory calibration that is required for most discrete proximity
sensor solutions. While the
device
is factory calibrated at a given pulse count, the number of proximity LED
pulses can be programmed from 1 to 255 pulses, which allows different proximity distances to be achieved.
Each pulse has a 16
μs
period with a 7.2
μs
on time.
Communication with the device is accomplished through a fast (up to 400 kHz), two-wire I
2
C serial bus for easy
connection to a microcontroller or embedded controller. The digital output of the device is inherently more
immune to noise when compared to an analog photodiode interface.
The device provides a separate pin for level-style interrupts. When interrupts are enabled and a pre-set value
is exceeded, the interrupt pin is asserted and remains asserted until cleared by the controlling firmware. The
interrupt feature simplifies and improves system efficiency by eliminating the need to poll a sensor for a light
intensity or proximity value. An interrupt is generated when the value of an ALS or proximity conversion exceeds
either an upper or lower threshold. In addition, a programmable interrupt persistence feature allows the user
to determine how many consecutive exceeded thresholds are necessary to trigger an interrupt. Interrupt
thresholds and persistence settings are configured independently for both ALS and proximity.
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ALS Control
Lower Limit
SDA
Channel 0
CH1
ADC
CH1
Data
Channel 1
I
2
C Interface
Wait Control
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SCL
GND
TMD2771
DIGITAL ALS
and PROXIMITY MODULE
TAOS143B − SEPTEMBER 2012
Terminal Functions
TERMINAL
NAME
GND
INT
LDR
LEDA
LEDK
SCL
SDA
V
DD
NO.
3
7
6
4
5
2
8
1
O
I
I
O
I
I/O
TYPE
DESCRIPTION
Power supply ground. All voltages are referenced to GND.
Interrupt — open drain.
LED driver input for proximity IR LED, constant current source LED driver.
LED anode.
I
2
C serial clock input terminal — clock signal for I
2
C serial data.
I
2
C serial data I/O terminal — serial data I/O for I
2
C .
Supply voltage.
LED cathode. Connect to LDR pin when using internal LED driver circuit.
Available Options
DEVICE
TMD27711
TMD27713
ADDRESS
0x39
0x39
Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)
†
Supply voltage, V
DD
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.8 V
Digital output voltage range, V
O
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 3.8 V
Digital output current, I
O
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −1 mA to 20 mA
Analog voltage range, LDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 3.8 V
Storage temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 85°C
ESD tolerance, human body model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000 V
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to GND.
Recommended Operating Conditions
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PACKAGE − LEADS
Module−8
Module−8
INTERFACE DESCRIPTION
I
2
C Vbus = V
DD
Interface
I
2
C Vbus = 1.8 V Interface
TMD27711
MIN
2.6
−3
−30
NOM
3
MAX
3.6
3
85
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ORDERING NUMBER
TMD27713
Supply voltage, V
DD
Supply voltage accuracy, V
DD
total error including transients
Operating free-air temperature, T
A
(Note 2)
NOTE 2: While the device is operational across the temperature range, functionality will vary with temperature. Specifications are stated only
at 25°C unless otherwise noted.
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UNIT
V
%
°C
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2012, TAOS Inc.
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TMD2771
DIGITAL ALS
and PROXIMITY MODULE
TAOS143B − SEPTEMBER 2012
Operating Characteristics, V
DD
= 3 V, T
A
= 255C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
Active — ATIME = 100 ms
I
DD
I
DD
V
OL
I
LEAK
I
LEAK
V
IH
V
IL
Supply current
Supply current — LDR pulse On
3 mA sink current
INT,
INT SDA output low voltage
Leakage current, SDA, SCL, INT pins
Leakage current, LDR pin
TMD27711
SCL,
SCL SDA input high voltage
SCL,
SCL SDA input low voltage
TMD27713
TMD27711
TMD27713
0.7 V
DD
1.25
6 mA sink current
0
0
−5
Wait mode
Sleep mode
MIN
TYP
175
65
2.5
3
0.4
0.6
4
mA
V
μA
μA
V
V
MAX
250
μA
UNIT
ALS Characteristics, V
DD
= 3 V, T
A
= 255C, AGAIN = 16×, AEN = 1 (unless otherwise noted) (Note 1)
PARAMETER
TEST CONDITIONS
CHANNEL
CH0
CH1
MIN
TYP
MAX
UNIT
E
e
= 0, AGAIN = 120
×
,
ATIME = 0xDB (100 ms)
ATIME = 0xFF
ATIME = 0xFF
0
0
1
0
0
1
1
5
5
Dark ALS ADC count value
ALS ADC integration time step size
ADC counts per step
ADC count value
ALS ADC Number of integration steps
ALS ADC count value
ALS ADC count value ratio: CH1/CH0
R
e
Irradiance responsivity
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Gain
G i scaling, relative to 1
×
gain
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i
setting
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NOTES: 1. Optical measurements are made using small-angle incident radiation from light-emitting diode optical sources. Visible 625 nm LEDs
and infrared 850 nm LEDs are used for final product testing for compatibility with high-volume production.
2. The 625 nm irradiance E
e
is supplied by an AlInGaP light-emitting diode with the following typical characteristics: peak wavelength
λp
= 625 nm and spectral halfwidth
Δλ½
= 20 nm.
3. The 850 nm irradiance E
e
is supplied by a GaAs light-emitting diode with the following typical characteristics: peak wavelength
λp
= 850 nm and spectral halfwidth
Δλ½
= 42 nm.
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0.54
2.58
2.72
2.9
256
1024
ATIME = 0xC0
65535
6000
λ
p
= 625 nm, E
e
= 60.5
μW/cm
2
,
ATIME = 0xF6 (27 ms)
See note 2.
λ
p
= 850 nm, E
e
= 82.7
μW/cm
2
,
ATIME = 0xF6 (27 ms)
See note 3.
CH0
CH1
CH0
CH1
4000
5000
790
4000
5000
2800
15.8
15 8
82.6
13.1
60.5
33.9
−10
−10
10
−10
10
10
10
6000
λ
p
= 625 nm ATIME = 0xF6 (27 ms) See note 2
nm,
2.
λ
p
= 850 nm ATIME = 0xF6 (27 ms) See note 3
nm,
3.
λ
p
= 625 nm, ATIME = 0xF6 (27 ms)
See note 2.
λ
p
= 850 nm, ATIME = 0xF6 (27 ms)
See note 3.
8
×
16
×
CH0
CH1
CH0
CH1
10.8
10 8
20.8
20 8
41
56
68
120
×
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5
10
0.3 V
DD
counts
ms
steps
counts
counts
counts
%
counts/
(μW/
cm
2
)
%
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