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SFAF1601GC0G

产品描述Rectifier Diode, 1 Phase, 1 Element, 16A, 50V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN
产品类别分立半导体    二极管   
文件大小419KB,共3页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 选型对比 全文预览

SFAF1601GC0G概述

Rectifier Diode, 1 Phase, 1 Element, 16A, 50V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN

SFAF1601GC0G规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
包装说明R-PSFM-T2
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS, UL RECOGNIZED
应用EFFICIENCY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.975 V
JEDEC-95代码TO-220AC
JESD-30 代码R-PSFM-T2
最大非重复峰值正向电流200 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流16 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
最大重复峰值反向电压50 V
最大反向电流10 µA
最大反向恢复时间0.035 µs
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE

SFAF1601GC0G文档预览

creat by art
SFAF1601G - SFAF1608G
16.0AMPS. Isolated Glass Passivated Super Fast Rectifiers
ITO-220AC
Features
UL Recognized File # E-326243
High efficiency, low VF.
High current capavility
High reliability
High surge current capability
Low power loss.
For use in low voltage, high frequency inverter,
free wheeling, and polarity protection application
Green compound with suffix "G" on packing
code & prefix "G" on datecode.
Mechanical Data
Cases: ITO-220AC molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260
o
C/10 seconds 16".,(4.06mm) from case.
Weight: 1.70 grams
Ordering Information(example)
Part No.
SFAF1601G
Package
Packing
Packing code
C0
Packing code
(Green)
C0G
ITO-220AC 50 / TUBE
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage
@ 16 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
(Note 1)
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJC
T
J
T
STG
SFAF SFAF SFAF SFAF SFAF SFAF SFAF SFAF
1601G 1602G 1603G 1604G 1605G 1606G 1607G 1608G
50
100
150
200
300
400
500
600
35
50
70
100
105
150
140
200
16
200
0.975
10
400
35
130
1.3
- 55 to + 150
- 55 to + 150
100
1.3
1.7
210
300
280
400
350
500
420
600
Units
V
V
V
A
A
V
uA
uA
nS
pF
O
@ T
A
=25
@ T
A
=100
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
C/W
O
O
C
C
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:F13
RATINGS AND CHARACTERISTIC CURVES (SFAF1601G THRU SFAF1608G)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
20
16
12
8
4
0
0
RESISTIVE OR
INDUCTIVELOAD
WITH HEAT SINK
INSTANTANEOUS REVERSE CURRENT (uA)
100
FIG. 2- TYPICAL REVERSE CHARACTERISTICS
1000
AVERAGE FORWARD
A
CURRENT (A)
TA=100℃
TA=75℃
10
50
100
150
CASE TEMPERATURE (
o
C)
1
FIG. 3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT.
(A)
250
TA=25℃
TA=25℃
200
150
100
50
0
NUMBER OF CYCLES AT 60 Hz
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
8.3ms Single Half Sine Wave
JEDEC Method
FIG. 5- TYPICAL FORWARD CHARACTERISTICS
100
FIG. 4- TYPICAL JUNCTION CAPACITANCE
300
250
CAPACITANCE (pF)
200
150
100
50
0
1
INSTANTANEOUS FORWARD CURRENT. (A)
1
10
100
SFAF1601G-SFAF1604G
10
TA=25
o
C
SFAF1601G~SFAF1604G
1
SFAF1605G-SFAF1606G
SFAF1607G-SFAF1608G
TA=25
o
C
Pulse Width=300us
1% Duty Cycle
0.1
0.4
0.6
0.8
1
1.2
1.4
FORWARD VOLTAGE. (V)
1.6
1.8
SFAF1605G~SFAF1608G
10
100
1000
REVERSE VOLTAGE. (V)
Version:F13
Ordering information
Part No.
Package
BULK Packing
50 / TUBE
Packing code
C0
Packing code
(Green)
C0G
SFAF160xG
ITO-220AC
Note: "x" is Device Code from "1" thru "8".
Dimensions
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Unit(mm)
Min
4.30
2.50
2.30
0.46
6.30
9.60
3.00
-
0.95
0.50
2.40
14.80
-
-
12.60
4.95
Max
4.70
3.10
2.90
0.76
6.90
10.30
3.40
1.60
1.45
0.90
3.20
15.50
4.10
1.80
13.80
5.20
Unit(inch)
Min
0.169
0.098
0.091
0.018
0.248
0.378
0.118
-
0.037
0.020
0.094
0.583
-
-
0.496
0.195
Max
0.185
0.122
0.114
0.030
0.272
0.406
0.134
0.063
0.057
0.035
0.126
0.610
0.161
0.071
0.543
0.205
Marking Diagram
P/N
G
YWW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Version:F13

SFAF1601GC0G相似产品对比

SFAF1601GC0G SFAF1604GC0G SFAF1606GC0 SFAF1603GC0G SFAF1605GC0G SFAF1607GC0G
描述 Rectifier Diode, 1 Phase, 1 Element, 16A, 50V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN Rectifier Diode, 1 Phase, 1 Element, 16A, 200V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN Rectifier Diode, 1 Phase, 1 Element, 16A, 400V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN Rectifier Diode, 1 Phase, 1 Element, 16A, 150V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN Rectifier Diode, 1 Phase, 1 Element, 16A, 300V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN Rectifier Diode, 1 Phase, 1 Element, 16A, 500V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN
是否Rohs认证 符合 符合 符合 符合 符合 符合
厂商名称 Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
包装说明 R-PSFM-T2 ITO-220AC, 3/2 PIN ITO-220AC, 3/2 PIN R-PSFM-T2 R-PSFM-T2 ITO-220AC, 3/2 PIN
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS, UL RECOGNIZED FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS, UL RECOGNIZED FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS, UL RECOGNIZED FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS, UL RECOGNIZED FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS, UL RECOGNIZED FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS, UL RECOGNIZED
应用 EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 0.975 V 0.975 V 1.3 V 0.975 V 1.3 V 1.7 V
JEDEC-95代码 TO-220AC TO-220AC TO-220AC TO-220AC TO-220AC TO-220AC
JESD-30 代码 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2
最大非重复峰值正向电流 200 A 200 A 200 A 200 A 200 A 200 A
元件数量 1 1 1 1 1 1
相数 1 1 1 1 1 1
端子数量 2 2 2 2 2 2
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
最大输出电流 16 A 16 A 16 A 16 A 16 A 16 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
最大重复峰值反向电压 50 V 200 V 400 V 150 V 300 V 500 V
最大反向电流 10 µA 10 µA 10 µA 10 µA 10 µA 10 µA
最大反向恢复时间 0.035 µs 0.035 µs 0.035 µs 0.035 µs 0.035 µs 0.035 µs
表面贴装 NO NO NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
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