电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MT46H32M16LGCK-75IT

产品描述DDR DRAM, 32MX16, 6ns, CMOS, PBGA60, 10 X 11.5 MM, LEAD FREE, PLASTIC, VFBGA-60
产品类别存储    存储   
文件大小9MB,共81页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准  
下载文档 详细参数 全文预览

MT46H32M16LGCK-75IT概述

DDR DRAM, 32MX16, 6ns, CMOS, PBGA60, 10 X 11.5 MM, LEAD FREE, PLASTIC, VFBGA-60

MT46H32M16LGCK-75IT规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Micron Technology
零件包装代码BGA
包装说明VFBGA, BGA60,9X10,32
针数60
Reach Compliance Codecompliant
ECCN代码EAR99
访问模式FOUR BANK PAGE BURST
最长访问时间6 ns
其他特性AUTO/SELF REFRESH
最大时钟频率 (fCLK)133 MHz
I/O 类型COMMON
交错的突发长度2,4,8,16
JESD-30 代码R-PBGA-B60
JESD-609代码e1
长度11.5 mm
内存密度536870912 bit
内存集成电路类型DDR DRAM
内存宽度16
功能数量1
端口数量1
端子数量60
字数33554432 words
字数代码32000000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织32MX16
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码VFBGA
封装等效代码BGA60,9X10,32
封装形状RECTANGULAR
封装形式GRID ARRAY, VERY THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度)260
电源1.8 V
认证状态Not Qualified
刷新周期8192
座面最大高度1 mm
自我刷新YES
连续突发长度2,4,8,16,FP
最大待机电流0.003 A
最大压摆率0.1 mA
最大供电电压 (Vsup)1.95 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
端子形式BALL
端子节距0.8 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
宽度10 mm

文档预览

下载PDF文档
Preliminary
512Mb: x16, x32 Mobile DDR SDRAM
Features
Mobile DDR SDRAM
MT46H32M16LF – 8 Meg x 16 x 4 banks
MT46H16M32LF/LG – 4 Meg x 32 x 4 banks
For the latest data sheet, refer to Micron’s Web site:
www.micron.com/mobile
Features
Endure-IC™ technology
V
DD/
V
DD
Q = +1.70V to +1.95V
Bidirectional data strobe per byte of data (DQS)
Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
Differential clock inputs (CK and CK#)
Commands entered on each positive CK edge
DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
Four internal banks for concurrent operation
Data masks (DM) for masking write data–one mask
per byte
Programmable burst lengths: 2, 4, 8, 16, or
continuous page
Concurrent auto precharge option is supported
Auto refresh and self refresh modes
1.8V LVCMOS compatible inputs
On-chip temperature sensor to control refresh rate
Partial array self refresh (PASR)
Deep power-down (DPD)
Selectable output drive (DS)
Clock stop capability
64ms refresh
Table 2:
Speed
Grade
Key Timing Parameters
Clock Rate
CL = 2
CL = 3
Data-
Access
Out
Window Time
DQS–
DQ
Skew
-6
-75
-10
166 MHz
83.3 MHz 133 MHz
66.7 MHz 104 MHz
1.5ns
2.2ns
2.6ns
5.5ns
6.0ns
7.0ns
+0.45ns
+0.6ns
+0.7ns
Options
• V
DD
/V
DD
Q
• 1.8V/1.8V
• Configuration
• 32 Meg x 16 (8 Meg x 16 x 4 banks)
• 16 Meg x 32 (4 Meg x 32 x 4 banks)
• Row size option
3
• JEDEC-standard option
• Reduced page-size option
• Plastic package
• 60-Ball VFBGA (10mm x 11.5mm)
1
• 90-Ball VFBGA (10mm x 13mm)
2
• Timing – cycle time
• 6ns @ CL = 3
• 7.5ns @ CL = 3
• 9.6ns @ CL = 3
• Power
• Standard I
DD
2/I
DD
6
• Low I
DD
2/I
DD
6
• Operating temperature range
• Commercial (0° to +70°C)
• Industrial (-40°C to +85°C)
Marking
H
32M16
16M32
LF
LG
CK
CM
-6
-75
-10
None
L
None
IT
Table 1:
DQ Bus
Width
Configuration Addressing
JEDEC-
Standard
Option
4
BA0, BA1
A0–A12
A0–A9
A0–A12
A0–A8
Reduced
Page-Size
Option
4
BA0, BA1
A0–A13
A0–A8
A0–A13
A0–A7
Architecture
Number of banks
Bank address balls
Row address balls
Column address balls
Row address balls
Column address balls
x16
x32
Notes:1.Only available for x16 configuration.
2. Only available for x32 configuration.
3. Row size options (LF = A12, JEDEC-standard;
LG = A13, page size option). See Table 1.
PDF: 09005aef818ff7c5/Source: 09005aef81a6c5f3
MT46H32M16LF_1.fm - Rev. G 11/05 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2005 Micron Technology, Inc. All rights reserved.
‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron
to meet Micron’s production data sheet specifications.

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2923  1554  1416  1589  2228  57  35  29  15  41 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved