Pb Free Plating Product
ISSUED DATE :2006/10/31
REVISED DATE :
GTT3434
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
30V
34m
6.1A
The GTT3434 uses advanced trench technology to provide excellent on-resistance and low gate charge.
The TSSOP-6 package is universally used for all commercial-industrial surface mount applications.
Description
Features
* Low on-resistance
*Capable of 2.5V gate drive
Package Dimensions
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min.
Max.
1.10 MAX.
0
0.10
0.70
1.00
0.12 REF.
2.70
3.10
2.60
3.00
1.40
1.80
REF.
L
L1
b
e
e1
Millimeter
Min.
Max.
0.45 REF.
0.60 REF.
0°
10°
0.30
0.50
0.95 REF.
1.90 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@4.5V
Continuous Drain Current , V
GS
@4.5V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
3
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Ratings
30
±12
6.1
4.9
30
1.14
0.01
-55 ~ +150
Unit
V
V
A
A
A
W
W/ :
:
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
Symbol
Rthj-a
Value
110
Unit
: /W
GTT3434
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ISSUED DATE :2006/10/31
REVISED DATE :
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=70 : )
Symbol
BV
DSS
V
GS(th)
g
fs
I
GSS
I
DSS
Min.
30
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
20
-
-
-
-
-
8
1.9
2.6
21
45
40
30
Max.
-
-
-
±100
1
5
34
50
12
-
-
-
-
-
-
Unit
V
V
S
nA
uA
uA
m
Test Conditions
V
GS
=0, I
D
=250uA
V
DS
=V
GS
, I
D
=1mA
V
DS
=10V, I
D
=6.1A
V
GS
= ±12V
V
DS
=30V, V
GS
=0
V
DS
=24V, V
GS
=0
V
GS
=4.5V, I
D
=6.1A
V
GS
=2.5V, I
D
=2.0A
I
D
=6.1A
V
DS
=15V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
V
GS
=4.5V
R
G
=6
R
L
=15
Static Drain-Source On-Resistance
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
2
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
nC
ns
Source-Drain Diode
Parameter
Forward On Voltage
2
Symbol
V
SD
T
rr
Min.
-
-
Typ.
-
40
Max.
1.2
-
Unit
V
ns
Test Conditions
I
S
=1.7A, V
GS
=0V
I
S
=1.7A, dI/dt=100A/ s
Reverse Recovery Time
2
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board, t 5sec; 180 : /W when mounted on Min. copper pad.
GTT3434
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ISSUED DATE :2006/10/31
REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Transfer Characteristics
Fig 3. On-Resistance v.s. Drain Current
Fig 4. On-Resistance
v.s. Junction Temperature
Fig 5. On-Resistance
v.s. Gate-Source Voltage
GTT3434
Fig 6. Body Diode Characteristics
Page: 3/4
ISSUED DATE :2006/10/31
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Threshold Voltage
Fig 10. Single Pulse Power
0.0001
0.001
0.01
0.1
1
10
100
600
Fig 11. Normalized Maximum Transient Thermal Impedance
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan:
No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China:
(201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GTT3434
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