Pb Free Plating Product
ISSUED DATE :2006/01/25
REVISED DATE :
GT6924E
N-CHANNEL MOSFET WITH SCHOTTKY DIODE
BV
DSS
R
DS(ON)
I
D
20V
600m
1A
The GM2306 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
Description
*Lower on-resistance
*Fast Switching Characteristic
*Included Schottky Diode
Features
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.60
1.40
0.30
0
0°
Max.
3.10
3.00
1.80
0.55
0.10
10°
REF.
G
H
I
J
K
L
Dimensions
Millimeter
1.90 REF.
1.20 REF.
0.12 REF.
0.37 REF.
0.60 REF.
0.95 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
(MOSFET)
Gate-Source Voltage
(MOSFET)
Continuous Drain Current
3
(MOSFET)
Continuous Drain Current
3
(MOSFET)
Pulsed Drain Current
1
(MOSFET)
Reverse Voltage
(Schottky)
Average Forward Current
(Schottky)
1
Pulsed Forward Current
(Schottky)
Total Power Dissipation
(MOSFET)
Total Power Dissipation
(Schottky)
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
V
KA
I
F
I
FM
P
D
@T
A
=25 :
Tj, Tstg
Symbol
Rthj-a
Ratings
20
±6
1.0
0.8
8
20
0.5
2.0
0.9
0.9
-55 ~ +125
Value
110
110
Unit
V
V
A
A
A
V
A
A
W
W
:
Unit
:
/W
: /W
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
3
(MOSFET)
(Schottky)
M
ax.
M
ax.
Thermal Resistance Junction-ambient
GT6924E
Page: 1/4
ISSUED DATE :2006/01/25
REVISED DATE :
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol
BV
DSS
BV
DSS
/
Tj
Min.
20
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.02
-
1
-
-
-
-
-
1.3
0.3
0.5
21
53
100
125
38
17
12
Max.
-
-
1.2
-
±10
1
10
600
850
2
-
-
-
-
-
-
60
-
-
Unit
V
V/ :
V
S
uA
uA
uA
m
Test Conditions
V
GS
=0, I
D
=250uA
Reference to 25 : , I
D
=1mA
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=600mA
V
GS
= ± 6V
V
DS
=20V, V
GS
=0
V
DS
=16V, V
GS
=0
V
GS
=4.5V, I
D
=1A
V
GS
=2.5V, I
D
=0.5A
I
D
=600mA
V
DS
=16V
V
GS
=4.5V
V
DS
=10V
I
D
=600mA
V
GS
=5V
R
G
=3.3
R
D
=16.7
V
GS
=0V
V
DS
=10V
f=1.0MHz
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=70 : )
V
GS(th)
g
fs
I
GSS
I
DSS
Static Drain-Source On-Resistance
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
nC
Ns
pF
Source-Drain Diode
Parameter
Forward On Voltage
2
Symbol
V
SD
Min.
-
Typ.
-
Max.
1.2
Unit
V
Test Conditions
I
S
=750mA, V
GS
=0V
Schottky Characteristics (Tj = 25 : )
Parameter
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
Symbol
V
F
I
RM
C
T
Min.
-
-
-
Typ.
-
-
21
Max.
0.5
100
-
Unit
V
uA
pF
Test Conditions
I
F
=500mA
V
R
=20V
V
R
=10V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in copper pad of FR4 board, t 5sec; 180 : /W when mounted on Min. copper pad.
2
GT6924E
Page: 2/4
ISSUED DATE :2006/01/25
REVISED DATE :
MOSFET Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GT6924E
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4
ISSUED DATE :2006/01/25
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Schottky Diode Characteristics Curve
Fig 10. Effective Transient Thermal Impedance
Fig 1.
Reverse Leakage Current v.s. Junction Temperature
Fig 12.
Forward Voltage Drop
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan:
No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China:
(201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GT6924E
Page: 4/4
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