Pb Free Plating Product
ISSUED DATE :2006/01/09
REVISED DATE :
GT6301K
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
30V
1
640mA
The GT6301K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The GT6301K is universally used for all commercial-industrial applications.
Description
Features
*Simple Drive Requirement
*Small Package Outline
*RoHS Compliant
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.60
1.40
0.30
0
0°
Max.
3.10
3.00
1.80
0.55
0.10
10°
REF.
G
H
I
J
K
L
Dimensions
Millimeter
1.90 REF.
1.20 REF.
0.12 REF.
0.37 REF.
0.60 REF.
0.95 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@10V
Continuous Drain Current
3
, V
GS
@10V
Pulsed Drain Current
1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Symbol
Rthj-a
Ratings
30
±16
640
500
950
1.2
0.01
-55 ~ +150
Value
110
Unit
V
V
mA
mA
mA
W
W/ :
:
Unit
:
/W
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
GT6301K
Page: 1/4
ISSUED DATE :2006/01/09
REVISED DATE :
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol
BV
DSS
BV
DSS
/
Tj
Min.
30
-
0.5
-
-
-
-
-
Typ.
-
0.06
-
600
-
-
-
-
-
-
1
0.5
0.5
12
10
56
29
32
8
6
Max.
-
-
1.5
-
±10
1
100
1
2
3
1.6
-
-
-
-
-
-
50
-
-
Unit
V
V/ :
V
mS
uA
uA
uA
Test Conditions
V
GS
=0, I
D
=250uA
Reference to 25 : , I
D
=1mA
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=600mA
V
GS
= ±16V
V
DS
=30V, V
GS
=0
V
DS
=24V, V
GS
=0
V
GS
=10V, I
D
=500mA
V
GS
=4.5V, I
D
=400mA
V
GS
=2.7V, I
D
=200mA
I
D
=600mA
V
DS
=50V
V
GS
=4.5V
V
DS
=30V
I
D
=600mA
V
GS
=10V
R
G
=3.3
R
D
=52
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=70 : )
V
GS(th)
g
fs
I
GSS
I
DSS
Static Drain-Source On-Resistance
R
DS(ON)
-
-
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Symbol
V
SD
-
-
-
-
-
-
-
-
-
-
nC
ns
pF
Source-Drain Diode
Parameter
Forward On Voltage
2
Min.
-
Typ.
-
Max.
1.2
Unit
V
Test Conditions
I
S
=1.2A, V
GS
=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board t
5sec; 180 : /W when mounted on Min. copper pad.
GT6301K
Page: 2/4
ISSUED DATE :2006/01/09
REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GT6301K
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4
ISSUED DATE :2006/01/09
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
180
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan:
No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China:
(201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GT6301K
Page: 4/4
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