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89C1632RPQE-20: 产品描述SRAM Module, 512KX32, 20ns, CMOS, CQFP68, CERAMIC, QFP-68; 产品类别存储存储; 文件大小353KB，共13页; 制造商Maxwell_Technologies_Inc.

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89C1632RPQE-20概述

SRAM Module, 512KX32, 20ns, CMOS, CQFP68, CERAMIC, QFP-68

89C1632RPQE-20规格参数

参数名称	属性值
厂商名称	Maxwell_Technologies_Inc.
零件包装代码	QFP
包装说明	GQFF,
针数	68
Reach Compliance Code	unknown
ECCN代码	3A001.A.2.C
最长访问时间	20 ns
JESD-30 代码	S-CQFP-F68
长度	37.9476 mm
内存密度	16777216 bit
内存集成电路类型	SRAM MODULE
内存宽度	32
功能数量	1
端子数量	68
字数	524288 words
字数代码	512000
工作模式	ASYNCHRONOUS
最高工作温度	125 °C
最低工作温度	-55 °C
组织	512KX32
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装代码	GQFF
封装形状	SQUARE
封装形式	FLATPACK, GUARD RING
并行/串行	PARALLEL
认证状态	Not Qualified
座面最大高度	6.1976 mm
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	MILITARY
端子形式	FLAT
端子节距	1.27 mm
端子位置	QUAD
总剂量	100k Rad(Si) V
宽度	37.9476 mm

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16 Megabit (512K x 32-Bit)

MCM SRAM

89C1632

16 Megabit (512k x 32-bit) SRAM MCM

CS 1-4

Address

OE, WE

Power

4Mb SRAM

Ground

MCM

Memory

I/O 0-7

I/O 8-15

I/O 16-23

I/O 24-31

Logic Diagram

EATURES

• Four 512k x 8 SRAM architecture

• R

-P

® technology hardens against natural space radia-

tion technology

• Total dose hardness:

- > 100 krad (Si), depending upon space mission

• Excellent Single Event Effects:

- SEL > 68 MeV/mg/cm

- SEU threshold = 3 MeV/mg/cm

- SEU saturated cross section: 6E-9 cm

/bit

• Package: 68-pin quad flat package

• Fast access time: 20, 25 and 30 ns

• Completely static memory - no clock or timing strobe

required

• Internal bypass capacitor

• High-speed silicon-gate CMOS technology

• 5V or 3V ± 10% power supply

• Equal address and chip enable access times

• Three-state outputs

• All inputs and outputs are TTL compatible

ESCRIPTION

Maxwell Technologies’ 89C1632 high-performance 16 Mega-

bit Multi-Chip Module (MCM) Static Random Access Memory

features a greater than 100 krad (Si) total dose tolerance,

depending upon space mission. The four 4-Megabyte SRAM

die and bypass capacitors are incorporated into a high-reliable

hermetic quad flat-pack ceramic package. With high-perfor-

mance silicon-gate CMOS technology, the 89C1632 reduces

power consumption and eliminates the need for external

clocks or timing strobes. It is equipped with output enable

(OE) and four byte enable (CS1 - CS4) inputs to allow greater

system flexibility. When OE input is high, the output is forced

to high impedance.

Maxwell Technologies' patented R

-P

® packaging technol-

ogy incorporates radiation shielding in the microcircuit pack-

age. In a GEO orbit, R

-P

provides true greater than 100

krad (Si) total radiation dose tolerance, dependent upon space

mission. It eliminates the need for box shielding while provid-

ing the required radiation shielding for a lifetime in orbit or a

space mission. This product is available in Class H or Class K

packaging and screening.

1000558

12.20.01 Rev 1

All data sheets are subject to change without notice

(619) 503-3300 - Fax: (619) 503-3301 - www.maxwell.com

89C1632RPQE-20相似产品对比

	89C1632RPQE-20	89C1632RPQE-30	89C1632RPQH-20	89C1632RPQI-30	89C1632RPQH-30	89C1632RPQH-25	89C1632RPQI-25	89C1632RPQK-20	89C1632RPQK-30
描述	SRAM Module, 512KX32, 20ns, CMOS, CQFP68, CERAMIC, QFP-68	SRAM Module, 512KX32, 30ns, CMOS, CQFP68, CERAMIC, QFP-68	SRAM Module, 512KX32, 20ns, CMOS, CQFP68, CERAMIC, QFP-68	SRAM Module, 512KX32, 30ns, CMOS, CQFP68, CERAMIC, QFP-68	SRAM Module, 512KX32, 30ns, CMOS, CQFP68, CERAMIC, QFP-68	SRAM Module, 512KX32, 25ns, CMOS, CQFP68, CERAMIC, QFP-68	SRAM Module, 512KX32, 25ns, CMOS, CQFP68, CERAMIC, QFP-68	SRAM Module, 512KX32, 20ns, CMOS, CQFP68, CERAMIC, QFP-68	SRAM Module, 512KX32, 30ns, CMOS, CQFP68, CERAMIC, QFP-68
零件包装代码	QFP	QFP	QFP	QFP	QFP	QFP	QFP	QFP	QFP
包装说明	GQFF,	GQFF,	GQFF,	GQFF,	GQFF,	GQFF,	GQFF,	GQFF,	GQFF,
针数	68	68	68	68	68	68	68	68	68
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
最长访问时间	20 ns	30 ns	20 ns	30 ns	30 ns	25 ns	25 ns	20 ns	30 ns
JESD-30 代码	S-CQFP-F68	S-CQFP-F68	S-CQFP-F68	S-CQFP-F68	S-CQFP-F68	S-CQFP-F68	S-CQFP-F68	S-CQFP-F68	S-CQFP-F68
长度	37.9476 mm	37.9476 mm	37.9476 mm	37.9476 mm	37.9476 mm	37.9476 mm	37.9476 mm	37.9476 mm	37.9476 mm
内存密度	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit
内存集成电路类型	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE
内存宽度	32	32	32	32	32	32	32	32	32
功能数量	1	1	1	1	1	1	1	1	1
端子数量	68	68	68	68	68	68	68	68	68
字数	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
字数代码	512000	512000	512000	512000	512000	512000	512000	512000	512000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
组织	512KX32	512KX32	512KX32	512KX32	512KX32	512KX32	512KX32	512KX32	512KX32
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装代码	GQFF	GQFF	GQFF	GQFF	GQFF	GQFF	GQFF	GQFF	GQFF
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	FLATPACK, GUARD RING	FLATPACK, GUARD RING	FLATPACK, GUARD RING	FLATPACK, GUARD RING	FLATPACK, GUARD RING	FLATPACK, GUARD RING	FLATPACK, GUARD RING	FLATPACK, GUARD RING	FLATPACK, GUARD RING
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	6.1976 mm	6.1976 mm	6.1976 mm	6.1976 mm	6.1976 mm	6.1976 mm	6.1976 mm	6.1976 mm	6.1976 mm
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
端子形式	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
端子节距	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
总剂量	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V
宽度	37.9476 mm	37.9476 mm	37.9476 mm	37.9476 mm	37.9476 mm	37.9476 mm	37.9476 mm	37.9476 mm	37.9476 mm
厂商名称	Maxwell_Technologies_Inc.	-	Maxwell_Technologies_Inc.	Maxwell_Technologies_Inc.	Maxwell_Technologies_Inc.	Maxwell_Technologies_Inc.	Maxwell_Technologies_Inc.	Maxwell_Technologies_Inc.	Maxwell_Technologies_Inc.

89C1632RPQE-20

89C1632RPQE-20概述

89C1632RPQE-20规格参数

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