CM1420, CM1422
LCD EMI Filter Array with
ESD Protection
Description
The CM1420 and CM1422 are EMI filter arrays with ESD
protection, which integrate six and eight Pi−filters (C−R−C),
respectively. The CM1420/22 has component values of 15 pF
−
100
W
−
15 pF. These devices include ESD protection diodes on every
pin, which provide a very high level of protection for sensitive
electronic components that may be subjected to electrostatic discharge
(ESD). The ESD diodes connected to the filter ports safely dissipate
ESD strikes of
±15
kV, well beyond the maximum requirement of the
IEC 61000−4−2 international standard. Using the MIL−STD−883
(Method 3015) specification for Human Body Model (HBM) ESD, the
pins are protected for contact discharges at greater than
±30
kV.
This device is particularly well suited for portable electronics (e.g.
wireless handsets, PDAs, notebook computers) because of its small
package format and easy−to−use pin assignments. In particular, the
CM1420/22 is ideal for EMI filtering and protecting data lines from
ESD for the LCD display in clamshell handsets.
The CM1420 and CM1422 incorporate
OptiGuardt
coating which
results in improved reliability at assembly. The CM1420 and CM1422
are available in space−saving, low−profile chip scale packages with
RoHS compliant lead−free finishing.
Features
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WLCSP15
CP SUFFIX
CASE 567BS
WLCSP20
CP SUFFIX
CASE 567BZ
MARKING DIAGRAM
N203
CM1420
15−Bump CSP Package
N203
N223
N223
CM1422
20−Bump CSP Package
= CM1420−03CP
= CM1422−03CP
•
Functionally and Pin Compatible with CSPEMI606 (CM1420) and
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•
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CSPEMI608 (CM1422) Devices
OptiGuardtCoated
for Improved Reliability at Assembly
Six and Eight Channels of EMI Filtering
±15
kV ESD Protection on Each Channel
(IEC 61000−4−2 Level 4, Contact Discharge)
±30
kV ESD Protection on Each Channel (HBM)
Better than 30 dB of Attenuation at 1 GHz to 3 GHz
Chip Scale Package Features Extremely Low Lead Inductance for
Optimum Filter and ESD Performance
15−Bump, 2.960 mm x 1.330 mm Footprint Chip Scale Package
(CM1420)
20−Bump, 4.000 mm x 1.458 mm Footprint Chip Scale Package
(CM1422)
These Devices are Pb−Free and are RoHS Compliant
LCD Data Lines in Clamshell Wireless Handsets
EMI Filtering & ESD Protection for High−Speed I/O Data Ports
Wireless Handsets / Cell Phones
Notebook Computers
PDAs / Handheld PCs
EMI Filtering for High−Speed Data Lines
ORDERING INFORMATION
Device
CM1420−03CP
CM1422−03CP
Package
CSP−15
(Pb−Free)
CSP−20
(Pb−Free)
Shipping
†
3500/Tape & Reel
3500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Applications
©
Semiconductor Components Industries, LLC, 2011
March, 2011
−
Rev. 4
1
Publication Order Number:
CM1420/D
CM1420, CM1422
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Temperature Range
DC Power per Resistor
DC Package Power Rating
Rating
−65
to +150
100
500
Units
°C
mW
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Rating
−40
to +85
Units
°C
Table 4. ELECTRICAL OPERATING CHARACTERISTICS
(Note 1)
Symbol
R
C
V
DIODE
I
LEAK
V
SIG
Resistance
Capacitance
Diode Standoff Voltage
Diode Leakage Current (reverse bias)
Signal Clamp Voltage
Positive Clamp
Negative Clamp
In−system ESD Withstand Voltage
a) Human Body Model, MIL−STD−883, Method 3015
b) Contact Discharge per IEC 61000−4−2 Level 4
Dynamic Resistance
Positive
Negative
Cut−off Frequency
Z
SOURCE
= 50
W,
Z
LOAD
= 50
W
R = 100
W,
C = 15 pF
At 2.5 V DC, 1 MHz,
30 mV AC
I
DIODE
= 10
mA
V
DIODE
= 3.3 V
I
LOAD
= 10 mA
(Note 3)
(Note 2)
5.6
−1.5
±30
±15
2.30
0.90
120
Parameter
Conditions
Min
80
12
Typ
100
15
6.0
100
6.8
−0.8
200
9.0
−0.4
Max
120
18
Units
W
pF
V
nA
V
V
ESD
kV
R
DYN
W
f
C
MHz
1. T
A
= 25
°
C unless otherwise specified.
2. ESD applied to input and output pins with respect to GND, one at a time.
3. Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A1, then clamping
voltage is measured at Pin C1.
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