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IRG4CC50KB: 产品描述Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 6 INCH, WAFER; 产品类别分立半导体晶体管; 文件大小121KB，共1页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/

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IRG4CC50KB概述

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 6 INCH, WAFER

IRG4CC50KB规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Infineon(英飞凌)
包装说明	6 INCH, WAFER
Reach Compliance Code	not_compliant
ECCN代码	EAR99
其他特性	ULTRA FAST SPEED
集电极-发射极最大电压	600 V
配置	SINGLE
门极发射器阈值电压最大值	6 V
JESD-30 代码	O-XUUC-N
JESD-609代码	e0
元件数量	1
封装主体材料	UNSPECIFIED
封装形状	ROUND
封装形式	UNCASED CHIP
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
认证状态	Not Qualified
表面贴装	YES
端子面层	TIN LEAD
端子形式	NO LEAD
端子位置	UPPER
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	POWER CONTROL
晶体管元件材料	SILICON

IRG4CC50KB文档预览

PD- 91774

IRG4CC50KB

IRG4CC50KB IGBT Die in Wafer Form

600 V

Size 5

Ultra-Fast Speed

6" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

CE (on)

(BR)CES

GE(th)

CES

GES

Description

Collector-to-Emitter Saturation Voltage

Colletor-to-Emitter Breakdown Voltage

Gate Threshold Voltage

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

Guaranteed (Min/Max)

4.5V Max.

600V Min.

3.0V Min., 6.0V Max.

300 µA Max.

11 µA Max.

Test Conditions

= 10A, T

= 25°C, V

= 15V

= 25°C, I

CES

= 250µA, V

= 0V

= V

, T

=25°C, I

=250µA

= 25°C, V

= 600V

= 25°C, V

= +/- 20V

Mechanical Data

Norminal Backmetal Composition, Thickness:

Norminal Front Metal Composition, Thickness:

Dimensions:

Wafer Diameter:

Wafer thickness:

Relevant Die Mechanical Dwg. Number

Minimum Street Width

Reject Ink Dot Size

Ink Dot Location

Recommended Storage Environment:

Recommended Die Attach Conditions:

Reference Standard IR packaged part ( for design ) : IRG4PC50K

Cr-Ni / V-Ag ( 1kA-2kA-2.5kA )

99% Al, 1% Si (4 microns)

0.257" x 0.260"

150mm, with std. < 100 > flat

.015" + / -.003"

01-5253

100 Microns

0.25mm Diameter Minimum

Consistent throughout same wafer lot

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300C

Die Outline

9/24/98

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IRG4CC50KB相似产品对比

	IRG4CC50KB	IRG4CC50KBPBF
描述	Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 6 INCH, WAFER	600V, N-CHANNEL IGBT, 6 INCH, WAFER
是否Rohs认证	不符合	符合
厂商名称	Infineon(英飞凌)	Infineon(英飞凌)
包装说明	6 INCH, WAFER	UNCASED CHIP, O-XUUC-N
Reach Compliance Code	not_compliant	compliant
其他特性	ULTRA FAST SPEED	ULTRA FAST SPEED
集电极-发射极最大电压	600 V	600 V
配置	SINGLE	SINGLE
JESD-30 代码	O-XUUC-N	O-XUUC-N
元件数量	1	1
封装主体材料	UNSPECIFIED	UNSPECIFIED
封装形状	ROUND	ROUND
封装形式	UNCASED CHIP	UNCASED CHIP
峰值回流温度（摄氏度）	NOT SPECIFIED	260
极性/信道类型	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified
表面贴装	YES	YES
端子面层	TIN LEAD	NOT SPECIFIED
端子形式	NO LEAD	NO LEAD
端子位置	UPPER	UPPER
处于峰值回流温度下的最长时间	NOT SPECIFIED	40
晶体管应用	POWER CONTROL	POWER CONTROL
晶体管元件材料	SILICON	SILICON

IRG4CC50KB

IRG4CC50KB概述

IRG4CC50KB规格参数

IRG4CC50KB文档预览

IRG4CC50KB相似产品对比

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