CZT955
SURFACE MOUNT SILICON
HIGH CURRENT
PNP TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT955 is a
silicon high current PNP transistor manufactured by
the epitaxial planar process, epoxy molded in a surface
mount package, designed for high voltage and high
current amplifier applications.
MARKING: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
ICER
IEBO
BVCBO
BVCER
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
fT
Cob
ton
toff
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
Θ
JA
UNITS
V
V
V
A
A
W
°C
°C/W
180
140
7.0
4.0
10
3.0
-65 to +150
41.7
CHARACTERISTICS:
(TA=25°C unless
TEST CONDITIONS
VCB=150V
VCB=150V, TA=100°C
VCE=150V, RBE≤1.0kΩ
VEB=6.0V
IC=100μA
IC=1.0μA, RBE≤1.0kΩ
IC=10mA
IE=100μA
IC=100mA, IB=5.0mA
IC=0.5A, IB=50mA
IC=1.0A, IB=100mA
IC=3.0A, IB=300mA
IC=3.0A, IB=300mA
VCE=5.0V, IC=3.0A
VCE=5.0V, IC=10mA
VCE=5.0V, IC=1.0A
VCE=5.0V, IC=3.0A
VCE=5.0V, IC=10A
VCE=10V, IC=100mA, f=50MHz
VCB=10V, IE=0, f=1.0MHz
VCC=50V, IC=1.0A, IB1=IB2=0.1A
VCC=50V, IC=1.0A, IB1=IB2=0.1A
otherwise noted)
MIN
TYP
MAX
20
0.5
20
10
180
180
140
7.0
100
100
35
200
200
160
8.0
40
55
85
210
0.96
830
250
220
5.0
200
33
25
410
60
80
120
360
1.04
930
300
UNITS
nA
μA
nA
nA
V
V
V
V
mV
mV
mV
mV
V
mV
MHz
pF
ns
ns
Notes: (1) FR-4 Epoxy PC Board with copper mounting pad area of 4in
2
(minimum)
R2 (11-June 2013)
PCB设计
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