电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MWT-0206S-7G2

产品描述RF/Microwave Amplifier, 2000 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
产品类别无线/射频/通信    射频和微波   
文件大小214KB,共2页
制造商Microwave_Technology_Inc.
下载文档 详细参数 选型对比 全文预览

MWT-0206S-7G2概述

RF/Microwave Amplifier, 2000 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

MWT-0206S-7G2规格参数

参数名称属性值
厂商名称Microwave_Technology_Inc.
包装说明FLNG,.4\"H.SPACE
Reach Compliance Codeunknown
构造MODULE
增益10.5 dB
最大工作频率6000 MHz
最小工作频率2000 MHz
最高工作温度105 °C
最低工作温度-55 °C
封装主体材料CERAMIC
封装等效代码FLNG,.4\"H.SPACE
电源8 V
射频/微波设备类型WIDE BAND LOW POWER
最大压摆率80 mA
技术GAAS
最大电压驻波比1.8

MWT-0206S-7G2文档预览

MwT-0206S-7G2/0206Z-7G2
2.0-6.0 GHz Balanced Amplifier Module
www.mwtinc.com
Email: info@mwtinc.com
TYPICAL SPECIFICATIONS AT 25 C
15.0 dBm P-1dB
11.0 dB SMALL SIGNAL GAIN
14.0 dB INPUT/OUTPUT RETURN LOSS
60 mA @ +8V
USES TWO MwT-7 GaAs FET DEVICES
3.0 dB NOISE FIGURE
5
10
15
20
25
2
S
11
3
4
5
Frequency (GHz)
6
S
22
12.0
11.0
10.0
2
3
4
5
Frequency (GHz)
6
ELECTRICAL SPECIFICATIONS
SYMBOL
FREQ
SSG
G/ F
G/ T
P-1dB
PSAT
P/ T
IP3
2nd HAR
2nd HAR
NF
VSWR IN
VSWR OUT
ISO
VDD
IDD
RTH
PARAMETERS
(Ta=25 C)
UNITS
GHz
dB
+/-dB
dB/ C
dBm
dBm
dB/ C
dBm
dBc
dBc
dB
-----
-----
dB
+V
mA
C/W
MIN
2.0
10.5
TYP
MAX
6.0
11.0
0.4
-.012
15.0
16.0
-.008
25.0
-21.0
-16.0
3.0
1.5:1
1.5:1
-20.0
8.0
60.0
196.0
0.6
Frequency Range
Small Signal Gain
SSG Flatness
SSG Variation over Temperature
Output Power at 1dB Compression
Output Power at 6 dB Compression
P-1dB Variation over Temperature
Third Order Intercept Point
2nd Harmonic at Pout=15.0 dBm
2nd Harmonic at Pout=16.0 dBm
Noise Figure
Input VSWR
Output VSWR
Reverse Isolation
Power Supply Voltage
Small Signal Module Current
Thermal Resistance Including FET*
Typical Input/Output
Return Loss (dB)
Typical Small
Signal Gain (dB)
14.0
3.5
1.8:1
1.8:1
8.1
80.0
7.9
* When calculating Tch, use FET Vds = 5.0 volts and FET ds = 30mA
4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
MwT-0206S-7G2/0206Z-7G2
2.0-6.0 GHz Balanced Amplifier Module
.113
.209
www.mwtinc.com
.183
.209
.113
.296
.087
.087
.183
.296
Email: info@mwtinc.com
O
O
.110
O
DC
.095
.110
RF IN
.025
DC
.095
.041
O
RF OUT
.08
.08
RF IN
.08
.08
RF OUT
.055
Max.
w/Caps
& Bond
Wires
.490
.600
.505
DC
.490
.600
.505
DC
“S”
Configurations
“Z”
Construction:
Construction
1. Dimension in Inches
2. Tolerance:
XXX= +/- .005
XX= +/- .01
The 15 mil alumina substrates and 10 mil copper FET ridge are brazed onto the 25
mil carrier using AuGe preform. The GaAs FETs are attached to the Cu ridge
using AuSn preform. All capacitors are attached using AuSn preforms. The
flanges are designed to accommodate 0-80 UNF-2A socket or Fillister head
screws on .400 center-to-center hole spacing. The modules are mechanically and
electrically designed to be cascaded.
Notes:
1. Custom module specifications and/or custom module mechanical configurations are
available.
2. Operating Temperature Range is -55 degrees Celsius to +105 degrees Celsius.
3. All modules are serialized and shipped with data measured at 25 degrees Celsius. Data
includes swept small signal gain, swept input and output return loss. Noise figure and
P-1dB are measured in 1 GHz increments. Special module testing is available.
4. Test Fixtures are available.
5. Microwave Technology reserves the right to ship modules with performance above the
typical specifications.
4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.

MWT-0206S-7G2相似产品对比

MWT-0206S-7G2 MWT-0206Z-7G2
描述 RF/Microwave Amplifier, 2000 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER RF/Microwave Amplifier, 2000 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
厂商名称 Microwave_Technology_Inc. Microwave_Technology_Inc.
包装说明 FLNG,.4\"H.SPACE FLNG,.4\"H.SPACE
Reach Compliance Code unknown unknown
构造 MODULE MODULE
增益 10.5 dB 10.5 dB
最大工作频率 6000 MHz 6000 MHz
最小工作频率 2000 MHz 2000 MHz
最高工作温度 105 °C 105 °C
最低工作温度 -55 °C -55 °C
封装主体材料 CERAMIC CERAMIC
封装等效代码 FLNG,.4\"H.SPACE FLNG,.4\"H.SPACE
电源 8 V 8 V
射频/微波设备类型 WIDE BAND LOW POWER WIDE BAND LOW POWER
最大压摆率 80 mA 80 mA
技术 GAAS GAAS
最大电压驻波比 1.8 1.8

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 255  2400  161  1543  1467  6  49  4  32  30 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved