SF11G - SF18G
1A Glass-passivated Super-fast Axial Rectifier
PRODUCT SUMMARY
Voltage range 50 to 600 Volts
Maximum reverse recovery time of 35ns
Rated 1.0 Amps at T
A
= 55°C
DO-41
FEATURES
Low forward voltage drop
High current capability
High reliability
High surge-current capability
MECHANICAL DATA
Case : Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: Axial leads,
matte-Sn plated
Polarity: Color band denotes cathode end
High temperature soldering guaranteed:
260°C for 10 seconds with 0.375" (9.5mm)
lead length at 5 lbs. (2.3kg) tension
Weight: 0.34 grams
Dimensions in inches and (millimeters)
Pb-free, RoHS compliant.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Maximum
recurrent peak reverse voltage
Maximum RMS
voltage
Maximum DC
blocking voltage
Maximum
average forward rectified current
with 0.375
(9.5mm)
lead length at TA = 55°C
Peak
forward surge current,
8.3 ms
single
half sine-wave superimposed
on
rated load
(JEDEC method )
Maximum
instantaneous forward voltage
at
1.0A
Maximum DC
reverse current
at
T
A
=25°C
at
rated
DC
blocking voltage
at
T
A
=125°C
Maximum
reverse recovery time
(Note 1)
Typical
junction capacitance
(Note 2)
Typical
thermal resistance
(Note 3)
Operating
temperature range
Storage
temperature range
Symbol
SF
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θ
JA
T
J
T
STG
11
50
35
50
SF
12
100
70
100
SF
13
150
105
150
SF
14
200
140
200
SF
15
300
210
300
SF
16
400
280
400
SF
17
500
350
500
SF
Units
18
600
V
420
V
600
V
A
A
1.0
30
0.95
5.0
100
35
20
80
-65 to +150
-65 to +150
10
1.3
1.7
V
uA
uA
ns
pF
°C/W
°C
°C
Notes: 1.
Reverse recovery test conditions: I
F
= 0.5A, I
R
= 1.0A, I
RR
= 0.25A
2. Measured at 1 MHz with applied reverse voltage of 4.0 V D.C.
3. Mounted on a Cu pad, size 5mm x 5mm, on PCB.
6/12/2006 Rev.3.01
www.SiliconStandard.com
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SF11G - SF18G
RATINGS AND CHARACTERISTIC CURVES
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
trr
+0.5A
(-)
DUT
(+)
50Vdc
(approx)
(-)
PULSE
GENERATOR
(NOTE 2)
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
0
-0.25A
AVERAGE FORWARD CURRENT. (A)
50W
NONINDUCTIVE
10W
NONINDUCTIVE
FIG.2- MAXIMUM AVERAGE
FORWARD CURRENT DERATING
1.5
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375" (9.5mm)
Lead Length
1.0
0.5
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
0
25
50
75 100 125 150 175
o
AMBIENT TEMPERATURE. ( C)
FIG.3- TYPICAL REVERSE CHARACTERISTICS
1000
FIG.4- TYPICAL FORWARD CHARACTERISTICS
100.0
o
INSTANTANEOUS REVERSE CURRENT. ( A)
100
INSTANTANEOUS FORWARD CURRENT. (A)
10
Tj=125 C
0
1.0
1
Tj=25
0
C
0.1
SF
11
G
~S
F1
4G
Tj=150
0
C
10.0
6G
F1
~S
G
8G
15
F1
SF
~S
G
17
SF
Tj=25
o
C
Pulse Width=300 s
1% Duty Cycle
.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
.01
0.4
0.6
0.8
1.0
1.2
1.4
FORWARD VOLTAGE. (V)
1.6
1.8
FIG.5- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
70
FIG.6- TYPICAL JUNCTION CAPACITANCE
PEAK FORWARD SURGE CURRENT. (A)
30
25
20
60
JUNCTION CAPACITANCE.(pF)
8.3ms Single Half Sine Wave
JEDEC Method
50
40
30
20
SF1
SF
11G
~S
F1
4G
Tj=25
0
C
10
5
5G~
SF1
8G
10
1
2
5
10
20
50
100
.1
.2
.5
1
2
5
10
20
50
100 200
500 1000
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE. (V)
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
6/12/2006 Rev.3.01
www.SiliconStandard.com
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