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BD3506EFV-E2

产品描述Fixed Positive LDO Regulator, 1.2V, 0.16V Dropout, CMOS, PDSO20, 5 X 6.40 MM, 1 MM HEIGHT, ROHS COMPLIANT, HTSSOP-20
产品类别电源/电源管理    电源电路   
文件大小587KB,共17页
制造商ROHM(罗姆半导体)
官网地址https://www.rohm.com/
标准  
下载文档 详细参数 全文预览

BD3506EFV-E2概述

Fixed Positive LDO Regulator, 1.2V, 0.16V Dropout, CMOS, PDSO20, 5 X 6.40 MM, 1 MM HEIGHT, ROHS COMPLIANT, HTSSOP-20

BD3506EFV-E2规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称ROHM(罗姆半导体)
零件包装代码TSSOP
包装说明5 X 6.40 MM, 1 MM HEIGHT, ROHS COMPLIANT, HTSSOP-20
针数20
Reach Compliance Codecompliant
ECCN代码EAR99
可调性ADJUSTABLE
最大回动电压 10.16 V
最大输入电压4.5 V
最小输入电压1.2 V
JESD-30 代码R-PDSO-G20
长度6.5 mm
最大电网调整率 (%/V)0.5
最大负载调整率 (%)1.5%
功能数量1
输出次数1
端子数量20
工作温度TJ-Max150 °C
最高工作温度100 °C
最低工作温度-10 °C
最大输出电流 11 A
最大输出电压 12.5 V
最小输出电压 10.65 V
标称输出电压 11.2 V
封装主体材料PLASTIC/EPOXY
封装代码HVSSOP
封装等效代码TSSOP20,.25
封装形状RECTANGULAR
封装形式SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH
包装方法TAPE AND REEL
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
调节器类型FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR
座面最大高度1 mm
表面贴装YES
技术CMOS
端子形式GULL WING
端子节距0.65 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度4.4 mm

BD3506EFV-E2文档预览

High Performance Regulators for PCs
Nch FET Ultra LDO
for PC Chipsets
BD3506F,BD3506EFV
No.10030EAT30
Description
The BD3506F/EFV is an ultra-low dropout linear regulator for chipset that can achieve ultra-low voltage input to ultra-low
voltage output. By using N-MOS FET for built-in power transistor, the regulator can be used at ultra-low I/O voltage
difference up to voltage difference generated by ON resistor (Ron = 120 mΩ/100 mΩ). Because by reducing the I/O voltage
difference, large current (Iomax = 2.5A) output is achieved and conversion loss can be reduced, switching power supply can
be replaced. BD3506F/EFV does not need any choke coil, diode for rectification and power transistors which are required
for switching power supply, total cost of the set can be reduced and compact size can be achieved for the set. Using
external resistors, optional output from 0.65V to 2.5V can be set. In addition, since voltage output start-up time can be
adjusted by using the NRCS terminal, it is possible to meet the power supply sequence of the set.
Features
1) Built-in high-accuracy reference voltage circuit (0.65V±1%)
2) Built-in VCC low input maloperation prevention circuit (Vcc = 4.15V)
3) Reduced rush current by NRCS
4) Built-in ultra-low on-resistor (120/100 mΩ typ) Nch Power MOSFET (BD3506F/BD3506EFV)
5) Built-in current limiting circuit (2.5A min)
6) Built-in thermal shutdown circuit
7) Output variable type (0.65-2.5V)
8) Adoption of SOP8 package (BD3506F): 5.0 x 6.2 x 1.5 (mm)
9) Adoption of high power HTSSOP-B20 package (BD3506EFV): 5.0 x 6.4 x 1.0 (mm)
Applications
Mobile PC, desktop PC, LCD-TV, DVD, digital home appliances
●Line
up
Parameter
Ron
Output Current
Package
BD3506F
120mΩ
2.5A
SOP8
BD3506EFV
100mΩ
2.5A
HTSSOP-B20
●Absolute
Maximum Ratings(Ta=25℃)
Parameter
Input Voltage1
Input Voltage2
Enable Input Voltage
Power Dissipation1
Power Dissipation2
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Symbol
VCC
VIN
Ven
Pd1
Pd2
Topr
Tstg
Tjmax
Ratings
BD3506F
7 *
1
7*
7
560 *
690 *
2
3
1
BD3506EFV
7 *
1
7*
7
-
1000 *
4
1
Unit
V
V
V
mW
mW
-10½+100
-55½+125
+150
-10½+100
-55½+125
+150
*1 However, not exceeding Pd.
*2 In the case of Ta≥25°C (no heat radiation board), derated at 4.48 mW/°C.
*3 In the case of Ta≥25°C (when mounting to 70mmx70mmx1.6mm glass epoxy substrate), derated at 5.52 mW/°C.
*4 In the case of Ta≥25°C (when mounting to 70mmx70mmx1.6mm glass epoxy substrate), derated at 8.00 mW/°C.
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
1/14
2010.05 - Rev.A
BD3506F,BD3506EFV
●Recommended
Operating Conditions(Ta=25℃)
Parameter
Input Voltage1
Input Voltage2
Output Voltage
Enable Input Voltage
Capacitor in NRCS pin
Symbol
VCC
VIN
Vo
Ven
CNRCS
Ratings
MIN
4.3
1.2
VFB
-0.3
0.001
MAX
5.5
VCC-1 *
2.5
5.5
1
5
Technical Note
Unit
V
V
V
V
µF
*5 However, irrespective of charging order of VCC and VIN.
* No radiation-resistant design is adopted for the present product.
●Electrical
Characteristics (unless otherwise noted, Ta=25 VCC=5V Ven=3V VIN=1.8V R1=3.9KΩ R2=3.3KΩ)
Limits
Parameter
Symbol
Unit
Condition
MIN
TYP
MAX
Bias Current
Bias current
Shut-Down Mode Current
Output Voltage
Maximum Output Current
Maximum Short Current
Temperature coefficient of Output Voltage
Feed Back Voltage 1
Feed Back Voltage 2
Line Regulation 1
Line Regulation 2
Dropout Voltage (BD3506F)
Dropout Voltage (BD3506EFV)
Standby Discharge Current
[Enable]
High level Enable Input Voltage
Low level Enable Input Voltage
Enable pin Input Current
[Voltage Feed Back]
Feed Back terminal Bias Current
[NRCS]
NRCS Charge Current
NRCS Standby Voltage
[UVLO]
VCC UVLO
VCC UVLO Hysteresis
*5 Design Guarantee
I
CC
I
ST
V
OUT
Io
Iost
Tcvo
V
FB1
V
FB2
Reg.l1
Reg.l2
Reg.L
dVo
dVo
Iden
Enhi
Enlow
Ien
I
FB
Inrcs
V
STB
V
CCUVLO
Vcchys
-
-
-
2.5
-
-
0.643
0.630
-
-
-
-
-
150
2
-0.3
-
-100
14
-
4.00
100
0.7
0
1.200
-
2.0
0.01
0.650
0.650
0.1
0.1
0.5
120
100
-
-
-
7
0
20
0
4.15
160
1.4
10
-
-
-
-
0.657
0.670
0.5
0.5
10
200
160
-
5.5
0.8
10
100
26
50
4.30
220
mA
µA
V
A
A
%/℃
V
V
%/V
%/V
mV
mV
mV
mA
V
V
µA
nA
µA
mV
V
mV
Vnrcs=0.5V
Ven=0V
Vcc:Sweep-up
Vcc:Sweep-down
Ven=3V
Io=50mA
Io=0 to 2A, Ta=-10 to 100℃*
5
VCC=4.3V to 5.5V
VIN=1.2V to 3.3V
Io=0 to 2A
Io=1A,VIN=1.2V, Ta=-10 to 100℃*
5
Io=1A,VIN=1.2V, Ta=-10 to 100℃*
5
Ven=0V, Vo=1V
Vo=0V
Ven=0V
Io=50mA
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
2/14
2010.05 - Rev.A
BD3506F,BD3506EFV
●Reference
Data
10
Technical Note
⊿Vout
(50mV/div)
EN
8
Vin
IIN(uA)
6
Vcc
Iout
(1A/div)
Vo
4
2
0
0
2
4
VIN(V)
6
8
Fig.1 Transient Response
Fig.2 Input Voltage
SequenceFinal Input Voltage
EN
656
655
654
Fig.3 VIN-IIN(Ta=25℃)
EN
EN
Vin
Vfb(mV)
653
652
651
650
649
Vin
Vcc
Vcc
Vo
648
647
646
-10
10
30
50
Ta(
)
70
90
Vo
Fig.4 Input Voltage
SequenceFinal Input Voltage
VIN
Fig.5 Ta-Vfb
Fig.6 Input Voltage
SequenceFinal Input Voltage
VCC
18
16
Vo
20mV/DIV
Vo
20mV/DIV
IEN(uA)
14
12
10
8
6
4
2
0
0
1
2
3
VEN(V)
4
5
Io
1A/DIV
Io
1A/DIV
Fig.7 Transient Response (rise)
Cout=100uF
Fig.8 Transient Response (fall)
Cout=100uF
Fig.9 VEN-IEN
Vo
20mV/DIV
EN
2V/DIV
NRCS
0.5V/DIV
EN
2V/DIV
NRCS
0.5V/DIV
Vo
0.5V/DIV
Io
1A/DIV
Vo
0.5V/DIV
Fig.10 Transient Response (rise)
Cout=220uF
Fig.11 Start up Wave Form
Fig.12 Shut down Wave Form
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
3/14
2010.05 - Rev.A
BD3506F,BD3506EFV
Technical Note
700
600
500
VFB(mV)
400
300
200
100
0
0
0.2
0.4
0.6
0.8
VNRCS(V)
1
1.2
Vo
20mV/DIV
Vo
50mV/DIV
Io
1A/DIV
Io
1A/DIV
Fig.13 VNRCS-VFB
Fig.14 Transient Response (fall)
Cout=220uF
Fig.15 Transient Response (rise)
47u MLCC+30mΩ
Vo
50mV/DIV
Io
1A/DIV
Fig.16 Transient Response (fall)
47u MLCC+30mΩ
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
4/14
2010.05 - Rev.A
BD3506F,BD3506EFV
●Block
Diagram
◎BD3506F
VCC
Technical Note
VCC
4
VCC
Enable
EN
1
UVLO
Reference
Block
Vo1
7
CL
UVLO
TSD
8
EN
Vo2
R2
VFB
3
NRCS
TSD
6
NRCS
5
GND
R1
Vo
CL
Current
Limit
2
VIN
VIN
Thermal
Shutdown
◎BD3506EFV
VCC
VCC
17
VIN1
VCC
EN
13
Reference
Block
UVLO
VCC
5
6
7
CL
UVLO
TSD
NRCS
TSD
4
NRCS
GND
2
3
20
CL
Current
15
Limit
Vo1
Vo2
Vo3
Vo
14
VIN2
VIN
EN
Thermal
Shutdown
Vo4
8
Vo5
9
Vo6
10
FB
16
R2
R1
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
5/14
2010.05 - Rev.A

 
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