TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal
| 参数名称 | 属性值 |
| 厂商名称 | Toshiba(东芝) |
| 包装说明 | SMALL OUTLINE, R-PDSO-F3 |
| 针数 | 3 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 其他特性 | BUILT-IN BIAS RESISTANCE RATIO IS 1 |
| 最大集电极电流 (IC) | 0.1 A |
| 集电极-发射极最大电压 | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 30 |
| JESD-30 代码 | R-PDSO-F3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | NPN |
| 最大功率耗散 (Abs) | 0.15 W |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | FLAT |
| 端子位置 | DUAL |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 250 MHz |
| RN1102FV | RN1106FV | RN1103FV | RN1101FV | RN1104FV | RN1105FV | |
|---|---|---|---|---|---|---|
| 描述 | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal |
| 厂商名称 | Toshiba(东芝) | Toshiba(东芝) | Toshiba(东芝) | Toshiba(东芝) | Toshiba(东芝) | Toshiba(东芝) |
| 包装说明 | SMALL OUTLINE, R-PDSO-F3 | SMALL OUTLINE, R-PDSO-F3 | SMALL OUTLINE, R-PDSO-F3 | SMALL OUTLINE, R-PDSO-F3 | SMALL OUTLINE, R-PDSO-F3 | SMALL OUTLINE, R-PDSO-F3 |
| 针数 | 3 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | BUILT-IN BIAS RESISTANCE RATIO IS 1 | BUILT-IN BIAS RESISTANCE RATIO IS 10 | BUILT-IN BIAS RESISTANCE RATIO IS 1 | BUILT-IN BIAS RESISTANCE RATIO IS 1 | BUILT-IN BIAS RESISTANCE RATIO IS 1 | BUILT-IN BIAS RESISTANCE RATIO IS 21.36 |
| 最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
| 集电极-发射极最大电压 | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 30 | 30 | 30 | 30 | 30 | 30 |
| JESD-30 代码 | R-PDSO-F3 | R-PDSO-F3 | R-PDSO-F3 | R-PDSO-F3 | R-PDSO-F3 | R-PDSO-F3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 | 3 |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN |
| 最大功率耗散 (Abs) | 0.15 W | 0.15 W | 0.15 W | 0.15 W | 0.15 W | 0.15 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 端子形式 | FLAT | FLAT | FLAT | FLAT | FLAT | FLAT |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 250 MHz | 250 MHz | 250 MHz | 250 MHz | 250 MHz | 250 MHz |
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