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5962-8968501VA

产品描述Power Bipolar Transistor, 0.5A I(C), 95V V(BR)CEO, 8-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 18 Pin, HERMETIC SEALED, CERAMIC, DIP-18
产品类别分立半导体    晶体管   
文件大小60KB,共10页
制造商Linfinity Microelectronics
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5962-8968501VA概述

Power Bipolar Transistor, 0.5A I(C), 95V V(BR)CEO, 8-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 18 Pin, HERMETIC SEALED, CERAMIC, DIP-18

5962-8968501VA规格参数

参数名称属性值
厂商名称Linfinity Microelectronics
包装说明IN-LINE, R-CDIP-T18
Reach Compliance Codeunknown
其他特性LOGIC LEVEL COMPATIBLE
最大集电极电流 (IC)0.5 A
集电极-发射极最大电压95 V
配置COMPLEX
最小直流电流增益 (hFE)1000
JESD-30 代码R-CDIP-T18
元件数量8
端子数量18
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状RECTANGULAR
封装形式IN-LINE
极性/信道类型NPN
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON

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REVISIONS
LTR
A
DESCRIPTION
Drawing updated to reflect current requirements. - ro
DATE (YR-MO-DA)
02-12-03
APPROVED
R. MONNIN
THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED.
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
REV
SHEET
PREPARED BY
JOSEPH A. KERBY
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
CHECKED BY
CHARLES E. BESORE
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216
http://www.dscc.dla.mil
APPROVED BY
MICHAEL A. FRYE
MICROCIRCUIT, LINEAR, HIGH-VOLTAGE, HIGH
CURRENT, DARLINGTON TRANSISTOR
ARRAYS, MONOLITHIC SILICON
DRAWING APPROVAL DATE
89-12-27
AMSC N/A
REVISION LEVEL
A
SIZE
A
SHEET
CAGE CODE
67268
1 OF
9
5962-89685
DSCC FORM 2233
APR 97
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
5962-E106-03

5962-8968501VA相似产品对比

5962-8968501VA 5962-89685012C 5962-89685012X 5962-89685012A 5962-8968501VX
描述 Power Bipolar Transistor, 0.5A I(C), 95V V(BR)CEO, 8-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 18 Pin, HERMETIC SEALED, CERAMIC, DIP-18 Power Bipolar Transistor, 0.5A I(C), 95V V(BR)CEO, 8-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 20 Pin, HERMETIC SEALED, CERAMIC, LCC-20 Power Bipolar Transistor, 0.5A I(C), 95V V(BR)CEO, 8-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 20 Pin, HERMETIC SEALED, CERAMIC, LCC-20 Power Bipolar Transistor, 0.5A I(C), 95V V(BR)CEO, 8-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 20 Pin, HERMETIC SEALED, CERAMIC, LCC-20 Power Bipolar Transistor, 0.5A I(C), 95V V(BR)CEO, 8-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 18 Pin, HERMETIC SEALED, CERAMIC, DIP-18
厂商名称 Linfinity Microelectronics Linfinity Microelectronics Linfinity Microelectronics Linfinity Microelectronics Linfinity Microelectronics
包装说明 IN-LINE, R-CDIP-T18 HERMETIC SEALED, CERAMIC, LCC-20 HERMETIC SEALED, CERAMIC, LCC-20 HERMETIC SEALED, CERAMIC, LCC-20 IN-LINE, R-CDIP-T18
Reach Compliance Code unknown unknown unknown unknown unknown
其他特性 LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
最大集电极电流 (IC) 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
集电极-发射极最大电压 95 V 95 V 95 V 95 V 95 V
配置 COMPLEX COMPLEX COMPLEX COMPLEX COMPLEX
最小直流电流增益 (hFE) 1000 1000 1000 1000 1000
JESD-30 代码 R-CDIP-T18 S-CQCC-N20 S-CQCC-N20 S-CQCC-N20 R-CDIP-T18
元件数量 8 8 8 8 8
端子数量 18 20 20 20 18
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装形状 RECTANGULAR SQUARE SQUARE SQUARE RECTANGULAR
封装形式 IN-LINE CHIP CARRIER CHIP CARRIER CHIP CARRIER IN-LINE
极性/信道类型 NPN NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO YES YES YES NO
端子形式 THROUGH-HOLE NO LEAD NO LEAD NO LEAD THROUGH-HOLE
端子位置 DUAL QUAD QUAD QUAD DUAL
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON

 
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