CT4148WSN
Small signal switching
Diodes
Foward Power Dissipation 200mW
FEATURES
Silicon epitaxial planar diode
SMD chip pattern, available in various dimension
included 1206
Fast switching diode.
MECHANICAL DATA
Case :
0805
Polarity : Color band denotes cathode
Weight : 0.006 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER at Tamb=25℃
Repetitive Peak Reverse Voltage
Average forward rectified current sin half wave
rectification with resistive load
Repetitive Peak Forward Current
Non-Repetitive Surge Forward Current @t<1s
@t<≦8.3ms
Forward Voltage @10mA
@100mA
Leakage Current @20V
@75V
Forward Power Dissipation
Power derating about 25℃
Capacitance @Vr=0V, f=1MHz
Reverse Recovery Time @IF=IR=10mA, RL=100Ω
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
SYMBOL
Value
UNIT
V
mA
mA
mA
V
uA
mW
mW/℃
pF
nS
℃/W
℃
℃
VRRM
I
F(AV)
I
FRM
I
FSM
V
F
I
R
Ptot
Ctot
Trr
RθJA
100
150
300
500
1000
1.0
1.25
0.025
5.0
200
1.6
4
4
375
-55 to +150
-55 to +150
T
J
T
STG
1 OF
2
CT4148WSN
CT4148WSN
TYPICAL CHARACTERISTICS
Figure 1. Forward Characteristic
Figure 2. Power De-rating
.
500
400
Ptot-Admissible Power
Dissipation/ mW
300
200
100
0
0
20
40
60
80
100 120 140 160
180 200
Tamb-Ambient Temperature/oC
Figure 3. Forward Current De-rating
500
Figure 4. Reverse Voltage De-rating
200
.
400
300
IF/ mA
.
VR/ V
.
100
200
100
0
0
20
40
60
80
100 120 140 160
180 200
.
0
0
20
40
60
80
100
120
140
Tamb-Ambient Temperature/oC
Tamb-Ambient Temperature/oC
2
OF
2
CT4148WSN
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