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71L024L70BFI: 产品描述Standard SRAM, 128KX8, 70ns, CMOS, PBGA46, 7 X 9 MM, 1.40 MM HEIGHT, 0.75 MM PITCH, FPBGA-46; 产品类别存储存储; 文件大小650KB，共11页; 制造商IDT (Integrated Device Technology)

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71L024L70BFI概述

Standard SRAM, 128KX8, 70ns, CMOS, PBGA46, 7 X 9 MM, 1.40 MM HEIGHT, 0.75 MM PITCH, FPBGA-46

71L024L70BFI规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	IDT (Integrated Device Technology)
包装说明	7 X 9 MM, 1.40 MM HEIGHT, 0.75 MM PITCH, FPBGA-46
Reach Compliance Code	not_compliant
最长访问时间	70 ns
I/O 类型	COMMON
JESD-30 代码	R-PBGA-B46
JESD-609代码	e0
长度	8.9 mm
内存密度	1048576 bit
内存集成电路类型	STANDARD SRAM
内存宽度	8
湿度敏感等级	3
功能数量	1
端子数量	46
字数	131072 words
字数代码	128000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	128KX8
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	LFBGA
封装等效代码	BGA48,6X8,30
封装形状	RECTANGULAR
封装形式	GRID ARRAY, LOW PROFILE, FINE PITCH
并行/串行	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	3 V
认证状态	Not Qualified
座面最大高度	1.4 mm
最大待机电流	0.000005 A
最小待机电流	1.5 V
最大压摆率	0.025 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	2.7 V
标称供电电压 (Vsup)	3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Lead (Sn63Pb37)
端子形式	BALL
端子节距	0.75 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	6.9 mm

71L024L70BFI相似产品对比

	71L024L70BFI	71L024L70PZI	71L024L70BF	71L024L100BFI	71L024L100PZ	71L024L100BF	71L024L100PZI	71L024L70PZ
描述	Standard SRAM, 128KX8, 70ns, CMOS, PBGA46, 7 X 9 MM, 1.40 MM HEIGHT, 0.75 MM PITCH, FPBGA-46	Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, 8 X 13.40 MM, TSOP1-32	Standard SRAM, 128KX8, 70ns, CMOS, PBGA46, 7 X 9 MM, 1.40 MM HEIGHT, 0.75 MM PITCH, FPBGA-46	Standard SRAM, 128KX8, 100ns, CMOS, PBGA46, 7 X 9 MM, 1.40 MM HEIGHT, 0.75 MM PITCH, FPBGA-46	Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, 8 X 13.40 MM, TSOP1-32	Standard SRAM, 128KX8, 100ns, CMOS, PBGA46, 7 X 9 MM, 1.40 MM HEIGHT, 0.75 MM PITCH, FPBGA-46	Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, 8 X 13.40 MM, TSOP1-32	Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, 8 X 13.40 MM, TSOP1-32
是否无铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
包装说明	7 X 9 MM, 1.40 MM HEIGHT, 0.75 MM PITCH, FPBGA-46	8 X 13.40 MM, TSOP1-32	7 X 9 MM, 1.40 MM HEIGHT, 0.75 MM PITCH, FPBGA-46	7 X 9 MM, 1.40 MM HEIGHT, 0.75 MM PITCH, FPBGA-46	8 X 13.40 MM, TSOP1-32	7 X 9 MM, 1.40 MM HEIGHT, 0.75 MM PITCH, FPBGA-46	8 X 13.40 MM, TSOP1-32	8 X 13.40 MM, TSOP1-32
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
最长访问时间	70 ns	70 ns	70 ns	100 ns	100 ns	100 ns	100 ns	70 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PBGA-B46	R-PDSO-G32	R-PBGA-B46	R-PBGA-B46	R-PDSO-G32	R-PBGA-B46	R-PDSO-G32	R-PDSO-G32
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0
内存密度	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	8	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1	1
端子数量	46	32	46	46	32	46	32	32
字数	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
字数代码	128000	128000	128000	128000	128000	128000	128000	128000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	70 °C	85 °C	70 °C	70 °C	85 °C	70 °C
组织	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LFBGA	TSOP1	LFBGA	LFBGA	TSOP1	LFBGA	TSOP1	TSOP1
封装等效代码	BGA48,6X8,30	TSOP32,.46	BGA48,6X8,30	BGA48,6X8,30	TSOP32,.46	BGA48,6X8,30	TSOP32,.46	TSOP32,.46
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY, LOW PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, LOW PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
电源	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大待机电流	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A
最小待机电流	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V
最大压摆率	0.025 mA	0.025 mA	0.025 mA	0.018 mA	0.018 mA	0.018 mA	0.018 mA	0.025 mA
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
标称供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL
端子面层	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	BALL	GULL WING	BALL	BALL	GULL WING	BALL	GULL WING	GULL WING
端子节距	0.75 mm	1.27 mm	0.75 mm	0.75 mm	1.27 mm	0.75 mm	1.27 mm	1.27 mm
端子位置	BOTTOM	DUAL	BOTTOM	BOTTOM	DUAL	BOTTOM	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

71L024L70BFI

71L024L70BFI概述

71L024L70BFI规格参数

71L024L70BFI相似产品对比

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