IRF840
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Ease of Paralleling
▼
Fast Switching Characteristic
▼
Simple Drive Requirement
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
500V
0.85Ω
8A
S
Description
APEC MOSFET provide the power designer with the best combination of fast
switching , lower on-resistance and reasonable cost.
The TO-220 and package is universally preferred for all commercial-industrial
applications. The device is suited for switch mode power supplies ,DC-AC
converters and high current high speed switching circuits.
G
D
S
TO-220(P)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Rating
500
±20
8
5.1
32
125
1
2
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
320
8
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
1.0
62
Unit
℃/W
℃/W
200430071-1/4
Data & specifications subject to change without notice
IRF840
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=125
o
C)
o
Test Conditions
V
GS
=0V, I
D
=1mA
V
GS
=10V, I
D
=4.8A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=4.8A
V
DS
=500V, V
GS
=0V
V
DS
=400V
,
V
GS
=0V
V
GS
=±20V
I
D
=8A
V
DS
=400V
V
GS
=10V
V
DD
=250V
I
D
=8A
R
G
=9.1Ω,V
GS
=10V
R
D
=31Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Min.
500
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
4.2
-
-
-
45
7
25
12
31
48
33
270
85
1.6
Max. Units
-
0.85
4
-
25
250
±100
72
-
-
-
-
-
-
-
-
2.4
V
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Gate-Source Leakage
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
3
1250 2000
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
3
3
Test Conditions
T
j
=25℃, I
S
=8A, V
GS
=0V
I
S
=8A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
515
8.6
Max. Units
1.5
-
-
V
ns
uC
t
rr
Q
rr
Notes:
Reverse Recovery Time
Reverse Recovery Charge
1.Pulse width limited by Max. junction temperature.
o
2.Starting T
j
=25 C , V
DD
=50V , L=10mH , R
G
=25Ω
3.Pulse test
THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT
OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
2/4
IRF840
16
8
T
C
=25 C
o
10V
7.0V
I
D
, Drain Current (A)
6
T
C
=150
o
C
10V
7 .0V
6 .0V
12
I
D
, Drain Current (A)
6.0V
8
5 .0 V
4
V
G
= 4. 5 V
2
4
5.0V
V
G
=4.5V
0
0
4
8
12
16
20
24
0
0
4
8
12
16
20
24
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3
I
D
=4.8A
V
G
=10V
Normalized BV
DSS
(V)
1.1
Normalized R
DS(ON)
2
1
1
0.9
0.8
-50
0
50
100
150
0
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C )
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
10
1.4
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
1.2
T
j
= 150
o
C
6
T
j
= 25
o
C
Normalized V
GS(th)
(V)
1
I
S
(A)
4
0.8
2
0.6
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
IRF840
f=1.0MHz
12
10000
I
D
=8A
10
V
GS
, Gate to Source Voltage (V)
8
V
DS
=100V
V
DS
=250V
V
DS
=400V
C (pF)
1000
C
iss
6
C
oss
100
4
C
rss
2
0
0
10
20
30
40
50
60
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
100us
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
0.2
I
D
(A)
0.1
1ms
1
0.1
0.05
P
DM
10ms
T
c
=25 C
Single Pulse
o
t
0.02
0.01
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
100m
1s
DC
100
1000
Single Pulse
0.1
1
10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
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