SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0035, Rev. A
MBR5100S
Green Products
MBR5100S SCHOTTKY RECTIFIER
Applications:
•
•
•
•
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Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Center tap configuration
Features:
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•
•
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Designed as Bypass Diodes for Solar Panels
High Forward Surge Capability
Ultra Low Forward Voltage Drop
Excellent High Temperature Stability
This is a Pb
−
Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In mm
TO-277B
•
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
•
•
FAX (86) 25-87123900
•
World Wide Web Site - http://www.sangdest.com.cn
•
E-Mail Address - sales@ sangdest.com.cn
•
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0035, Rev. A
MBR5100S
Green Products
Marking Diagram:
Where XXXXX is YYWWL
5
100
S
YY
WW
L
= Forward Current (5A)
= Reverse Voltage (100V)
= Device Type
= Year
= Week
= Lot Number
Cautions：
Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
MBR5100S
Package
TO-277B (Pb-Free)
Shipping
5000pcs/ reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Average Forward Current
Peak One Cycle Non-
Repetitive Surge Current
(per leg)
Symbol
V
RWM
I
F(AV)
I
FSM
Condition
-
50% duty cycle @T
C
= 105°C,
rectangular wave form
8.3 ms, half Sine pulse
Max.
100
5
120
Units
V
A
A
•
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
•
•
FAX (86) 25-87123900
•
World Wide Web Site - http://www.sangdest.com.cn
•
E-Mail Address - sales@ sangdest.com.cn
•
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0035, Rev. A
MBR5100S
Green Products
Electrical Characteristics:
Characteristics
Forward Voltage Drop
Reverse Current
Symbol
V
F1
V
F2
I
R1
I
R2
*
Pulse Width < 300µs, Duty Cycle <2%
Condition
@ 5A, Pulse, T
J
= 25
°C
@ 5A, Pulse, T
J
= 125
°C
@V
R
= rated V
R
T
J
= 25
°C
@V
R
= rated V
R
T
J
= 125°C
Max.
0.85
0.70
1.0
10
Units
V
V
mA
mA
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Typical Thermal Resistance
Junction to Ambient
Approximate Weight
Case Style
Symbol
T
J
T
stg
R
θJA
wt
-
TO-277B
Condition
-
-
DC operation
Specification
-55 to +150
-55 to +150
25
0.08
Units
°C
°C
°C/W
g
•
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
•
•
FAX (86) 25-87123900
•
World Wide Web Site - http://www.sangdest.com.cn
•
E-Mail Address - sales@ sangdest.com.cn
•
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0035, Rev. A
MBR5100S
Green Products
Junction Capacitance-CT(PF)
1000
1
Reverse Current-IR(MA)
0.1
0.01
0.001
0.0001
0
5
10
15
20
25
30
35
40
TJ=125℃
100
TJ=25℃
TJ=25℃
10
Reverse Voltage-VR(V)
10
20
30
40
50
60
70
80
90
100
Reverse Voltage-VR(V)
Fig.1-Typical Junction Capacitance Vs.Reverse
Voltage
Fig.2-Typical Values Of Reverse Current Vs.Reverse
Voltage
Instantaneous Forward Current-IF(A)
100
10
TJ=125℃
TJ=25℃
1
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
Forward Voltage Drop-VF(V)
Fig.3-Typical Forward Voltage Drop Characteristics
•
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
•
•
FAX (86) 25-87123900
•
World Wide Web Site - http://www.sangdest.com.cn
•
E-Mail Address - sales@ sangdest.com.cn
•
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0035, Rev. A
MBR5100S
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
•
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
•
•
FAX (86) 25-87123900
•
World Wide Web Site - http://www.sangdest.com.cn
•
E-Mail Address - sales@ sangdest.com.cn
•
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