MBR20135CT
MBR20150CT
Technical Data
Data Sheet N0625, Rev. A
MBR20135CT/MBR20150CT SCHOTTKY RECTIFIER
Features
175C T
J
operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced
mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
LKLLKJHYJ,
TO-220AB
Circuit Diagram
Applications
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak Repetitive Surge current (Rated
V
R
, Square Wave,20KHz)
Peak One Cycle Non-Repetitive Surge
Current(Per Leg)
Symbol
V
RRM
V
RWM
V
R
I
F (AV)
I
RRM
I
FSM
Condition
-
50% duty cycle @Tc=125°C,
rectangular wave form
-
8.3ms, Half Sine pulse,
T
C
= 25
C
135
150
Max.
MBR20135CT
MBR20150CT
10(Per Leg)
20(Per Device)
1.0
150
Units
V
A
A
A
Electrical Characteristics:
Characteristics
Forward Voltage Drop(Per Leg)*
Reverse Current(Per Leg)*
Junction Capacitance(Per Leg)
Voltage Rate of Change
* Pulse width < 300 µs, duty cycle < 2%
Symbol
V
F1
V
F2
I
R1
I
R2
C
T
dv/dt
Condition
@ 10A, Pulse, T
J
= 25
C
@ 10A, Pulse, T
J
= 125
C
@V
R
= rated V
R,
T
J
= 25
C
@V
R
= rated V
R
, T
J
= 125
C
@V
R
= 5V, T
C
= 25
C
f
SIG
= 1MHz
-
Typ.
0.84
0.75
0.001
0.1
170
-
Max.
0.90
0.83
0.5
5
400
10,000
Units
V
V
mA
mA
pF
V/s
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MBR20135CT
MBR20150CT
Technical Data
Data Sheet N0625, Rev. A
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Typical Thermal Resistance Junction to
Case
Typical Thermal
Resistance, Case to Heat Sink
Approximate Weight
Symbol
T
J
T
stg
R
JC
R
CS
wt
Condition
-
-
DC operation
Mounting surface, smooth and
greased
-
Specification
-55 to +175
-55 to +175
3.5
0.50
2
Units
C
C
C/W
C/W
g
Ratings and Characteristics Curves
10000
Junction Capacitance (PF)
1000
TJ=25℃
100
10
0
5
10
15
20
25
30
35
40
Reverse Voltage (V)
Fig.1-Typical Junction Capacitance
Fig.2-Forward current derating curve
μ
A)
Instantaneous Reverse Current (
1000
100
10
1
0.1
0.01
10
20
30
40
50
60
70
80
90
100
Pe r ce nt of Rate d Pe ak Re ve r s e V oltage (%)
TJ=125℃
TJ=125℃
TJ=25℃
TJ=25℃
Fig.3-Typical Reverse Characteristics
Fig.4-Typical Instantaneous Forward Voltage Characteristics
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MBR20135CT
MBR20150CT
Technical Data
Data Sheet N0625, Rev. A
Mechanical Dimensions TO-220AB
Symbol
A
A1
A2
b
b1
c
D
D1
E
e
e1
H1
L
L1
ΦP
Q
Θ1
Θ2
Θ3
Min
4.42
1.17
2.52
0.71
1.17
0.31
14.94
8.85
10.01
4.98
6.04
12.7
3.56
3.74
2.54
Dimensions in
millimeters
Typical
4.57
1.27
2.69
0.81
1.27
0.38
15.24
9.00
10.16
2.54
5.06
6.24
13.56
3.5
3.84
2.74
7°
3°
4°
Max
4.72
1.37
2.89
0.96
1.37
0.61
15.54
9.15
10.31
5.18
6.44
13.80
3.96
4.04
2.94
Tube Specification
Marking Diagram
Where XXXXX is YYWWL
MBR
20
135/150
CT
SSG
YY
WW
L
= Device Type
= Forward Current (20A)
= Reverse Voltage(135/150V)
= Configuration
= SSG
= Year
= Week
= Lot Number
Cautions：Molding
resin
Epoxy resin UL:94V-0
Ordering Information
Device
MBR20135/150CT
TO-220AB (Pb-Free)
Package
50 pcs/ tube
Shipping
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging
specification.
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MBR20135CT
MBR20150CT
Technical Data
Data Sheet N0625, Rev. A
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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