SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1553, REV. -
MBR60200WT
Green products
MBR60200WT SCHOTTKY RECTIFIER
Applications:
•
•
•
•
•
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Center tap configuration
ANODE 1
ANODE 2
3
Features:
•
•
•
•
•
•
•
•
•
175°C T
J
operation
Center tap TO-247AD package
Low forward voltage drop
High purity, high temperature epoxy encapsulation for enhanced
mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb
−
Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
1
2
COMMON
CATHODE
BASE
Mechanical Dimensions: In mm
TO-247AD(CLD)
•
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
•
•
FAX (86) 25-87123900
•
World Wide Web Site - http://www.sangdest.com.cn
•
E-Mail Address - sales@ sangdest.com.cn
•
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1553, REV. -
MBR60200WT
Green products
Marking Diagram:
Where XXXXX is YYWWL
MBR
60
200
WT
SSG
YY
WW
L
= Device Type
= Forward Current (60A)
= Reverse Voltage (200V)
= Configuration
= SSG
= Year
= Week
= Lot Number
Cautions：
Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
MBR60200WT
Package
TO-247AD (Pb-Free)
Shipping
30pcs/ tube
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Average Forward Current
Peak One Cycle Non-
Repetitive Surge Current
(per leg)
Symbol
V
RWM
I
F(AV)
I
FSM
Condition
-
50% duty cycle @T
C
=110°C,
rectangular wave form
8.3 ms, half Sine pulse
Max.
200
60
400
Units
V
A
A
•
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
•
•
FAX (86) 25-87123900
•
World Wide Web Site - http://www.sangdest.com.cn
•
E-Mail Address - sales@ sangdest.com.cn
•
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1553, REV. -
MBR60200WT
Green products
Electrical Characteristics:
Characteristics
Forward Voltage Drop
(per leg) *
Reverse Current (per leg) *
Symbol
V
F1
I
R1
I
R2
Junction Capacitance
(per leg)
Typical Series Inductance
(per leg)
Voltage Rate of Change
*
Pulse Width < 300µs, Duty Cycle <2%
Condition
@ 30A, Pulse, T
J
= 25
°C
@V
R
= rated V
R
T
J
= 25
°C
@V
R
= rated V
R
T
J
= 100
°C
@V
R
= 5V, T
C
= 25
°C
f
SIG
= 1MHz
Measured lead to lead 5 mm from
package body
-
Max.
0.90
0.05
20
600
8.0
10,000
Units
V
mA
mA
pF
nH
V/μs
C
T
L
S
dv/dt
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Maximum Thermal
Resistance Junction to Case
Approximate Weight
Case Style
Symbol
T
J
T
stg
R
θJC
wt
Condition
-
-
DC operation
-
TO-247AD
Specification
-55 to +175
-55 to +175
1.5
6.28
Units
°C
°C
°C/W
g
•
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
•
•
FAX (86) 25-87123900
•
World Wide Web Site - http://www.sangdest.com.cn
•
E-Mail Address - sales@ sangdest.com.cn
•
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1553, REV. -
MBR60200WT
Green products
•
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
•
•
FAX (86) 25-87123900
•
World Wide Web Site - http://www.sangdest.com.cn
•
E-Mail Address - sales@ sangdest.com.cn
•
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1553, REV. -
MBR60200WT
Green products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
•
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
•
•
FAX (86) 25-87123900
•
World Wide Web Site - http://www.sangdest.com.cn
•
E-Mail Address - sales@ sangdest.com.cn
•
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
