HLMP-D150, HLMP-D155, HLMP-K150 and HLMP-K155
T-13/4 (5 mm), T-1 (3 mm), Low Current,
Double Heterojunction AlGaAs Red LED Lamps
Data Sheet
Description
These solid state LED lamps utilize double heterojunction
(DH) AlGaAs/GaAs material technology. This LED material
has outstanding light output efficiency at very low drive
currents. The color is deep red at the dominant wave-
length of 637 nanometres. These lamps are ideally suited
for use in applications where high light output is required
with minimum power output.
Features
•
Minimum luminous intensity specified at 1 mA
•
High light output at low currents
•
Wide viewing angle
•
Outstanding material efficiency
•
Low power/low forward voltage
•
CMOS/MOS compatible
•
TTL compatible
•
Deep red color
Applications
•
Low power circuits
•
Battery powered equipment
•
Telecommunication indicators
Package Dimensions
5.08 (0.200)
4.57 (0.180)
5.08 (0.200)
4.57 (0.180)
0.89 (0.035) 9.19 (0.362)
0.64 (0.025) 8.43 (0.332)
1.14 (.045)
0.51 (.020)
1.32 (0.052)
1.02 (0.040)
23.0 MIN.
(0.90)
Ø
3.17 (.125)
2.67 (.105)
3.43 (.135)
2.92 (.115)
4.70 (.185)
4.19 (.165)
9.19 (0.362)
8.43 (0.332)
0.89 (0.035)
0.64 (0.025)
0.65 (0.026) MAX.
13.25 (0.522)
12.45 (0.490)
6.35 (.250)
5.58 (.220)
0.65 (0.026) max.
CATHODE
25.40 (1.00)
MINIMUM
0.46 (0.018)
SQUARE NOMINAL
24.1(.95) min.
1.52 (.060)
1.02 (.040)
0.55 (0.022)
0.40 (0.016)
1.27(0.050)
NOM.
SQ. TYP.
1.27 (0.050)
NOM.
CATHODE
6.1 (0.240)
5.6 (0.220)
2.54 (0.100)
NOM.
6.10 (0.240)
5.59 (0.220)
2.79 (.110)
2.29 (.090)
(0.022) 0.55 SQ. TYP.
(0.016) 0.40
2.54 (0.100) NOM.
A.
Notes:
1. All dimensions are in mm (inches).
2. An epoxy meniscus may extend about 1 mm (0.040") down the leads.
3. For PCB hole recommendations, see the Precautions section.
B.
C.
Selection Guide
Luminous Intensity
Iv (mcd) at 1 mA
Package Description
T-1 3/4 Red Tinted Diffused
T-1 3/4 Red Untinted Non-diffused
T-1 Red Tinted Diffused
Device HLMP-
D150
D150-C00xx
D155
D155-F00xx
K150
K150-C00xx
K150-CD0xx
Min.
1.3
1.3
5.4
5.4
1.3
1.3
1.3
2.1
2.1
Typ.
3.0
3.0
10.0
10.0
2.0
2.0
3.0
3.0
3.0
Max.
–
–
–
–
–
–
4.2
–
–
2θ
1/2[1]
Degree
65
65
24
24
60
60
60
45
45
Package
Outline
A
A
B
B
C
C
C
C
C
T-1 Red Untinted Non-diffused
K155
K155-D00xx
Note:
1. θ
1/2
is the off axis angle from lamp centerline where the luminous intensity is
1
/
2
the on-axis value.
Part Numbering System
HLMP - x 1 xx - x x x xx
Mechanical Option
00: Bulk
01: Tape & Reel, Crimped Leads
02: Tape & Reel, Straight Leads
A1, B1: Right Angle Housing, Uneven Leads
A2, B2: Right Angle Housing, Even Leads
DD, DH: Ammo Pack
Color Bin Options
0: Full color bin distribution
Maximum Iv Bin Options
0: Open (No max. limit)
Others: Please refer to the Iv bin table
Minimum Iv Bin Options
Please refer to the Iv bin table
Lens Option
50: Tinted, Diffused
55: Untinted, Nondiffused
Package Options
D: T-13/4 (5 mm)
K: T-1 (3 mm)
2
Absolute Maximum Ratings at T
A
= 25°C
Parameter
Peak Forward Current
[1]
Average Forward Current
DC Current
[2]
Power Dissipation
Reverse Voltage (IR = 100 μA)
Transient Forward Current (10 μs Pulse)
[3
]
LED Junction Temperature
Operating Temperature Range
Storage Temperature Range
Value
300 mA
20 mA
30 mA
87 mW
5V
500 mA
110°C
-20 to +100°C
-40 to +100°C
Notes:
1. Maximum I
PEAK
at f = 1 kHz, DF = 6.7%.
2. Derate linearly as shown in Figure 4.
3. The transient peak current is the maximum non-recurring peak current the device can withstand without damaging the LED die and wire bonds.
It is not recommended that the device be operated at peak currents beyond the Absolute Maximum Peak Forward Current.
Electrical/Optical Characteristics at T
A
= 25°C
Symbol
V
F
V
R
λ
p
λ
d
Δλ
1
/
2
τ
S
C
Rθ
J-PIN
Description
Forward Voltage
Reverse Breakdown Voltage
Peak Wavelength
Dominant Wavelength
Spectral Line Halfwidth
Speed of Response
Capacitance
Thermal Resistance
Min.
5.0
Typ.
1.6
15.0
645
637
20
30
30
260
[3]
210
[4]
290
[5]
80
Max.
1.8
Unit
V
V
nm
nm
nm
ns
pF
°C/W
Test Condition
I
F
= 1 mA
I
R
= 100 μA
Measurement at Peak
Note 1
Wavelength width at spectral
distribution 1/2 power point.
Exponential Time Constant, e
-t
/T
S
V
F
= 0, f = 1 MHz
Junction to Cathode Lead
η
V
Luminous Efficacy
Im/W
Note 2
Notes:
1. The dominant wavelength, λ
d
, is derived from the CIE chromaticity diagram and represents the color of the device.
2. The radiant intensity, I
e
, in watts per steradian, may be found from the equation I
e
= l
V
/η
V
, where I
V
is the luminous intensity in candelas and η
V
is
luminous efficacy in lumens/watt.
3. HLMP-D150.
4. HLMP-D155.
5. HLMP-K150/-K155.
3
Figure 1. Relative intensity vs. wavelength.
Figure 2. Forward current vs. forward voltage.
Figure 3. Relative luminous intensity vs. dc forward current.
Figure 4. Maximum forward dc current vs. ambient temperature.
Derating based on TJ Max. = 110 °C.
Figure 5. Relative luminous intensity vs. angular displacement.
HLMP-D150.
Figure 6. Relative luminous intensity vs. angular displacement.
HLMP-K150.
4
Figure 7. Relative luminous intensity vs. angular displacement.
HLMP-D155.
Figure 8. Relative luminous intensity vs. angular displacement.
HLMP-K155.
Intensity Bin Limits
Intensity Range (mcd)
Color
Red
Bin
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
Min.
1.5
2.4
3.8
6.1
9.7
15.5
24.8
39.6
63.4
101.5
162.4
234.6
340.0
540.0
850.0
1200.0
1700.0
2400.0
3400.0
4900.0
7100.0
10200.0
14800.0
21400.0
Max.
2.4
3.8
6.1
9.7
15.5
24.8
39.6
63.4
101.5
162.4
234.6
340.0
540.0
850.0
1200.0
1700.0
2400.0
3400.0
4900.0
7100.0
10200.0
14800.0
21400.0
30900.0
Note: Maximum tolerance for each bin limit is
±
18%.
5
Microchip MCU
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