SBR1545CT
Technical Data
Data Sheet N0896, Rev. A
SBR1545CT SCHOTTKY RECTIFIER
Features
150C T
J
operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced
mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
LKLLKJHYJ,
TO-220AB
Circuit Diagram
Applications
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak One Cycle Non-Repetitive Surge
Current(Per Leg)
Symbol
V
RRM
V
RWM
V
R
I
F (AV)
I
FSM
Condition
-
50% duty cycle @Tc=105°C,
rectangular wave form
8.3ms, Half Sine pulse, T
C
= 25
C
Max.
45
7.5(Per Leg)
15(Per Device)
180
Units
V
A
A
Electrical Characteristics:
Characteristics
Forward Voltage Drop(Per Leg)*
Reverse Current(Per Leg)*
Junction Capacitance(Per Leg)
Series Inductance(Per Leg)
Voltage Rate of Change
* Pulse width < 300 µs, duty cycle < 2%
Symbol
V
F1
V
F2
I
R1
I
R2
C
T
L
S
dv/dt
Condition
@ 7.5A, Pulse, T
J
= 25
C
@ 7.5A, Pulse, T
J
= 125
C
@V
R
= rated V
R,
T
J
= 25
C
@V
R
= rated V
R
, T
J
= 125
C
@V
R
= 5V, T
C
= 25
C
f
SIG
= 1MHz
Measured lead to lead 5 mm from
package body
-
Typ.
0.68
0.60
0.01
8
140
8.0
-
Max.
0.72
0.64
1.0
30.0
400
-
10,000
Units
V
V
mA
mA
pF
nH
V/s
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SBR1545CT
Technical Data
Data Sheet N0896, Rev. A
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Typical Thermal Resistance Junction to
Case(Per Leg)
Approximate Weight
Symbol
T
J
T
stg
R
JC
wt
Condition
-
-
DC operation
-
Specification
-55 to +150
-55 to +150
3.5
2
Units
C
C
C/W
g
Ratings and Characteristics Curves
1000
Junction Capacitance-CT(PF)
100
10
TJ=125℃
TJ=25℃
100
Reverse Current-IR(MA)
1
0.1
0.01
0.001
0.0001
0
5
10
15
20
25
30
35
40
45
Reverse Voltage-VR(V)
TJ=25℃
10
5
10
15
20
25
30
35
40
Reverse Voltage-VR(V)
Fig.3-Typical Junction Capacitance Vs.Reverse Voltage
Fig.1-Typical Junction Capacitance
Instantaneous Forward Current-
IF(A)
100
Fig.2-Typical Reverse Characteristics
TJ=125℃
10
TJ=25℃
1
0.2
0.4
0.6
0.8
1
1.2
1.4
Forward Voltage Drop-VF(V)
Fig.3-Typical Instantaneous Forward Voltage Characteristics
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SBR1545CT
Technical Data
Data Sheet N0896, Rev. A
Mechanical Dimensions TO-220AB
Symbol
A
A1
A2
b
b1
c
D
D1
E
e
e1
H1
L
L1
ΦP
Q
Θ1
Θ2
Θ3
Min
4.42
1.17
2.52
0.71
1.17
0.31
14.94
8.85
10.01
4.98
6.04
12.7
3.56
3.74
2.54
Dimensions in
millimeters
Typical
4.57
1.27
2.69
0.81
1.27
0.38
15.24
9.00
10.16
2.54
5.06
6.24
13.56
3.5
3.84
2.74
7°
3°
4°
Max
4.72
1.37
2.89
0.96
1.37
0.61
15.54
9.15
10.31
5.18
6.44
13.80
3.96
4.04
2.94
Tube Specification
Marking Diagram
Where XXXXX is YYWWL
SBR
15
45
CT
SSG
YY
WW
L
= Device Type
= Forward Current (15A)
= Reverse Voltage(45V)
= Configuration
= SSG
= Year
= Week
= Lot Number
Cautions：Molding
resin
Epoxy resin UL:94V-0
Ordering Information
Device
SBR1545CT
TO-220AB (Pb-Free)
Package
50 pcs/ tube
Shipping
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging
specification.
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SBR1545CT
Technical Data
Data Sheet N0896, Rev. A
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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