4
1N5391S - 1N5399S
Taiwan Semiconductor
1.5A, 50V - 1000V Silicon Rectifier
FEATURES
●
●
●
●
●
High efficiency, Low V
F
High current capability
High reliability
Low power loss
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
Configuration
VALUE
1.5
50 - 1000
50
125
UNIT
A
V
A
°C
APPLICATIONS
●
●
●
●
●
●
Switching mode power supply
HV-Charging
Power Inverters
PFC
Solar/Wind Renewable Energy
Motor Drives
DO-204AL (DO-41)
Single Die
MECHANICAL DATA
●
●
●
●
●
●
tR
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
SYMBOL
Marking code on the device
Repetitive peak reverse
voltage
Reverse voltage, total rms
value
Maximum DC blocking
voltage
Forward current
Surge peak forward current,
8.3 ms single half sine-wave
superimposed on rated load
per diode
Junction temperature
Storage temperature
eco
DO-204AL (DO-41)
1N
1N
1N
1N
1N
1N
1N
UNIT
5391S 5392S 5393S 5395S 5397S 5398S 5399S
1N5391S 1N5392S 1N5393S 1N5395S 1N5397S 1N5398S 1N5399S
50
35
50
100
70
100
200
140
200
400
280
400
1.5
50
- 55 to +125
- 55 to +125
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
°C
°C
1
Case: DO-204AL (DO-41)
Molding compound meets UL 94V-0 flammability rating
Terminal: Pure tin plated leads, solderable per J-STD-002
Meet JESD 201 class 1A whisker test
Polarity: As marked
Weight: 0.33 g (approximately)
No
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
T
J
T
STG
mm
en
Version:F1705
de
d
4
1N5391S - 1N5399S
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance
Junction-to-ambient thermal resistance
Junction-to-case thermal resistance
SYMBOL
R
ӨJL
R
ӨJA
R
ӨJC
LIMIT
25
65
22
UNIT
°C/W
°C/W
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
1N5391S
1N5392S
1N5393S
1N5395S
1N5397S
1N5398S
1N5399S
(2)
CONDITIONS
SYMBOL
TYP
-
MAX
1.1
UNIT
V
Forward voltage per diode
(1)
I
F
= 1.5A,T
J
= 25°C
V
F
-
1.0
V
d
de
I
R
C
J
PACKING CODE
A0
-
-
30
Reverse current @ rated V
R
per diode
Junction capacitance
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
T
J
= 25°C
T
J
= 125°C
5
50
-
µA
µA
pF
PART NO.
PACKING CODE
A0
R0
R1
B0
eco
2
ORDERING INFORMATION
mm
en
1 MHz, V
R
=4.0V
PACKAGE
DO-41
DO-41
DO-41
DO-41
PACKING
3,000 / Ammo box (52mm taping)
5,000 / 13" Paper reel
5,000 / 13" Paper reel (Reverse)
1,000 / Bulk packing
1N539xS
(Note 1)
Note:
1. "x" defines voltage from 50V (1N5391S) to 1000V (1N5399S)
EXAMPLE P/N
EXAMPLE P/N
1N5391S A0
PART NO.
1N5391S
DESCRIPTION
No
tR
Version:F1705
4
1N5391S - 1N5399S
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
2
AVERAGE FORWARD CURRENT (A)
Fig.2 Typical Junction Capacitance
1000
1.5
CAPACITANCE (pF)
100
1
10
0.5
0
0
25
LEAD
50
75
100
125
TEMPERATURE(
o
C)
1
de
0.1
1
UF1DLW
1N5392S - 1N5399S
T
J
=125°C
0.1
0.3
0.6
0.4
0.5
0.8
0.6
0.7
f=1.0MHz
Vslg=50mVp-p
d
10
100
REVERSE VOLTAGE (V)
Pulse width
0.8
0.9
1
1.1
1.4
1.2
1
1.2
FORWARD VOLTAGE (V)
Fig.3 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
100
eco
INSTANTANEOUS FORWARD CURRENT (A)
tR
No
T
J
=125℃
10
mm
en
100 10
10 1
Fig.4 Typical Forward Characteristics
1
0.01
0.1
0.001
0.01
0.1
T
J
=25℃
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
3
Version:F1705
(A)
1
T
J
=25°C
1N5391S
4
1N5391S - 1N5399S
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
PEAK FORWARD SURGE CURRENT(A)
50
8.3ms Single Half Wave
40
30
20
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
No
4
tR
eco
mm
en
Version:F1705
de
d
4
1N5391S - 1N5399S
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DO-204AL (DO-41)
DIM.
A
B
C
D
E
Unit (mm)
Min
2.00
0.71
25.40
4.20
25.40
Max
2.70
0.86
-
5.20
-
Unit (inch)
Min
0.079
0.028
1.000
0.165
1.000
Max
0.106
0.034
-
0.205
-
No
P/N
YWW
F
= Marking Code
= Date Code
= Factory Code
5
tR
MARKING DIAGRAM
eco
mm
en
Version:F1705
de
d
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