FR16B02 thru FR16JR02
Silicon Fast
Recovery Diode
Features
• High Surge Capability
• Types from 100 V to 600 V V
RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
DO-4 Package
V
RRM
= 100 V - 600 V
I
F
= 16 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
I
F,SM
T
j
T
stg
T
C
≤
100 °C
T
C
= 25 °C, t
p
= 8.3 ms
Conditions
FR16B(R)02
100
70
100
16
225
-55 to 150
-55 to 150
FR16D(R)02
200
140
200
16
225
-55 to 150
-55 to 150
FR16G(R)02
400
280
400
16
225
-55 to 150
-55 to 150
FR16J(R)02
600
420
600
16
225
-55 to 150
-55 to 150
Unit
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 16 A, T
j
= 25 °C
V
R
= 100 V, T
j
= 25 °C
V
R
= 100 V, T
j
= 150 °C
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
FR16B(R)02
0.9
25
6
FR16D(R)02
0.9
25
6
FR16G(R)02
0.9
25
6
FR16J(R)02
0.9
25
6
Unit
V
μA
mA
Recovery Time
Maximum reverse recovery
time
T
RR
200
200
200
250
nS
Thermal characteristics
Thermal resistance, junction
- case
R
thJC
1.5
1.5
1.5
1.5
°C/W
www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
1
FR16B02 thru FR16JR02
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
M
DO- 4 (DO-203AA)
J
P
D
G
N
B
E
F
A
C
Inches
Min
A
B
C
D
E
F
G
J
M
N
P
0.424
-----
------
0.453
0.114
-----
-----
-----
0.031
0.070
0.437
0.505
0.800
0.492
0.140
0.405
0.216
φ0.302
0.045
0.79
Max
10-32 UNF
10.77
-----
-----
11.50
2.90
-----
-----
-----
0.80
1.80
Min
Millimeters
Max
11.10
12.82
20.30
12.50
3.50
10.29
5.50
φ7.68
1.15
2.00
www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
3
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