Electrical Datasheet*
GB01SHT12-CAU
Silicon Carbide Power
Schottky Diode Chip
Features
1200 V Schottky rectifier
250 °C maximum operating temperature
Temperature independent switching behavior
Superior surge current capability
Positive temperature coefficient of V
F
Extremely fast switching speeds
Superior figure of merit Q
C
/I
F
Maximum Ratings at T
j
= 250 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Operating and storage temperature
Symbol
V
RRM
I
F
I
F(RMS)
T
j
, T
stg
Conditions
T
C
≤
235 °C
T
C
≤
235 °C
Values
1200
1
2
-55 to 250
Unit
V
A
A
°C
Electrical Characteristics at T
j
= 250 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
Symbol
V
F
I
R
Q
C
t
s
C
Conditions
I
F
= 1 A, T
j
= 25 °C
I
F
= 1 A, T
j
= 210 °C
V
R
= 1200 V, T
j
= 25 °C
V
R
= 1200 V, T
j
= 275 °C
V
R
= 400 V
I
F
≤
I
F,MAX
V
R
= 960 V
dI
F
/dt = 200 A/μs
V
R
= 400 V
T
j
= 210 °C
V
R
= 960 V
V
R
= 1 V, f = 1 MHz, T
j
= 25 °C
V
R
= 400 V, f = 1 MHz, T
j
= 25 °C
V
R
= 1000 V, f = 1 MHz, T
j
= 25 °C
min.
Values
typ.
1.96
3.1
0.1
6.6
6
11
< 17
66
10
8
max.
Unit
V
10
30
µA
nC
ns
pF
Thermal Characteristics
Thermal resistance, junction - case
R
thJC
Assuming TO-276 package
3.55
°C/W
*For chip size and metallization, please refer to the mechanical datasheet (must have a non-disclosure agreement with GeneSiC
Semiconductor).
April 2012
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Electrical Datasheet*
GB01SHT12-CAU
Figure 1: Typical Forward Characteristics
Figure 2: Typical Reverse Characteristics
Figure 3: Typical Junction Capacitance vs Reverse Voltage
Characteristics
Figure 4: Typical Switching Energy vs Reverse Voltage
Characteristics
Revision History
Date
2012/04/03
Revision
0
Comments
Initial release
Supersedes
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.
April 2012
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GB01SHT12-CAU
SPICE Model Parameters
Copy the following code into a SPICE software program for simulation of the GB01SHT12-CAU device.
*
MODEL OF GeneSiC Semiconductor Inc.
*
*
$Revision:
1.0
$
*
$Date:
05-SEP-2013
$
*
*
GeneSiC Semiconductor Inc.
*
43670 Trade Center Place Ste. 155
*
Dulles, VA 20166
*
httphttp://www.genesicsemi.com/index.php/sic-products/schottky
*
*
COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.
*
ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of GB01SHT12-CAU SPICE Model
*
.SUBCKT GB01SHT12 ANODE KATHODE
R1 ANODE INT R=((TEMP-24)*0.0099); Temperature Dependant Resistor
D1 INT KATHODE GB01SHT12_25C; Call the 25C Diode Model
D2 ANODE KATHODE GB01SHT12_PIN; Call the PiN Diode Model
.MODEL GB01SHT12_25C D
+ IS
1.88E-18
RS
0.9255
+ N
1
IKF
98.29122743
+ EG
1.2
XTI
3
+ CJO
7.90E-11
VJ
0.367
+ M
1.63
FC
0.5
+ TT
1.00E-10
BV
1500
+ IBV
1.00E-03
VPK
1200
+ IAVE
1
TYPE
SiC_Schottky
+ MFG
GeneSiC_Semiconductor
.MODEL GB01SHT12_PIN D
+ IS
2.76E-16
RS
0.84243
+ N
3.791461
IKF
2.98675
+ EG
3.23
XTI
30
+ FC
0.5
TT
0
+ BV
1500
IBV
1.00E-03
+ VPK
1200
IAVE
1
+ TYPE
SiC_PiN
.ENDS
*
* End of GB01SHT12-CAU SPICE Model
Sep 2013
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