电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

GBPC2506TW

产品描述Silicon Bridge Rectifier
文件大小329KB,共4页
制造商GeneSiC
官网地址http://www.genesicsemi.com/
下载文档 全文预览

GBPC2506TW概述

Silicon Bridge Rectifier

文档预览

下载PDF文档
GBPC2506T/W thru GBPC2510T/W
Single Phase Glass Passivated
Silicon Bridge Rectifier
Features
• Integrally molded heat sink provides low thermal resistance
for maximum heat dissipation
• High surge current capability
• Universal 3-way terminals: snap on, wire-around, or P.C
board mounting
• High temperature soldering guaranteed: 260⁰C/ 10
seconds at 5 lbs (2.3 kg) tension
• Not ESD Sensitive
V
RRM
= 600 V - 1000 V
I
O
= 25 A
GBPC-T/W Package
Mechanical Data
Case: Molded plastic with heat sink integrally mounted in the bridge
encapsulation
Terminals: Either nickel plated 0.25". Faston lugs or copper leads
0.040" diameter.
Polarity: Polarrity symbols marked on the body
Mounting position: Bolt down on heat-sink with silicone thermal
compound between bridge and mounting surface
Weight: 15 grams or 0.53 ounces
Mounting torque: 20 inch-lbs max
Maximum ratings at Tc = 25 °C, unless otherwise specified (GBPCXXXXT uses GBPC-T package while GBPCXXXXW
uses GBPC-W package)
Parameter
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
GBPC2506T/W
600
420
600
-55 to 150
-55 to 150
GBPC2508T/W
800
560
800
-55 to 150
-55 to 150
GBPC2510T/W
1000
700
1000
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
Electrical characteristics at Tc = 25 °C, unless otherwise specified
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Parameter
Maximum average forward rectified
current
Peak forward surge current
Maximum instantaneous forward
voltage drop per leg
Maximum DC reverse current at
rated DC blocking voltage per leg
Rating for fusing
RMS isolation voltage from case to
leads
Symbol
I
O
I
FSM
V
F
I
R
I
2
t
V
ISO
C
j
R
ΘJC
Conditions
T
c
= 50 °C
single sine-wave
I
F
= 12.5 A
T
a
= 25 °C
T
a
= 125 °C
1 ms < t
m
< 8.3 ms
GBPC2506T/W
25.0
300
1.1
5
500
375
2500
300
1.9
GBPC2508T/W
25.0
300
1.1
5
500
375
2500
300
1.9
GBPC2510T/W
25.0
300
1.1
5
500
375
2500
300
1.9
Unit
A
A
V
μA
A
2
sec
V
pF
°C/W
Typical junction capacitance
Typical thermal resistance
www.genesicsemi.com/silicon-products/bridge-rectifiers/
1

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1793  1139  1083  602  1653  6  46  32  18  31 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved