GB05SLT12-252
Silicon Carbide Power
Schottky Diode
V
RRM
I
F (Tc = 25°C)
I
F (Tc
≤
150°C)
Q
C
Package
RoHS Compliant
case
PIN 1
CASE
=
=
=
=
1200 V
12 A
5A
21 nC
Features
Industry’s leading low leakage currents
175 °C maximum operating temperature
Temperature independent switching behavior
Superior surge current capability
Positive temperature coefficient of V
F
Extremely fast switching speeds
Superior figure of merit Q
C
/I
F
2
1
PIN 2
TO – 252
Advantages
Low standby power losses
Improved circuit efficiency (Lower overall cost)
Low switching losses
Ease of paralleling devices without thermal runaway
Smaller heat sink requirements
Low reverse recovery current
Low device capacitance
Low reverse leakage current at operating temperature
Applications
Power Factor Correction (PFC)
Switched-Mode Power Supply (SMPS)
Solar Inverters
Wind Turbine Inverters
Motor Drives
Induction Heating
Uninterruptible Power Supply (UPS)
High Voltage Multipliers
Maximum Ratings at T
j
= 175 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Continuous forward current
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
I
2
t value
Power dissipation
Operating and storage temperature
Symbol
V
RRM
I
F
I
F
I
F(RMS)
I
F,SM
I
F,max
∫i
2
dt
P
tot
T
j
, T
stg
Conditions
T
C
= 25 °C
T
C
≤ 150 °C
T
C
≤ 150 °C
T
C
= 25 °C, t
P
= 10 ms
T
C
= 150 °C, t
P
= 10 ms
T
C
= 25 °C, t
P
= 10 µs
T
C
= 25 °C, t
P
= 10 ms
T
C
= 150 °C, t
P
= 10 ms
T
C
= 25 °C
Values
1200
12
5
8
32
26
120
5
3.4
117
-55 to 175
Unit
V
A
A
A
A
A
A
2
s
W
°C
Electrical Characteristics at T
j
= 175 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
Symbol
V
F
I
R
Q
C
t
s
C
Conditions
I
F
= 5 A, T
j
= 25 °C
I
F
= 5 A, T
j
= 175 °C
V
R
= 1200 V, T
j
= 25 °C
V
R
= 1200 V, T
j
= 175 °C
V
R
= 400 V
I
F
≤ I
F,MAX
V
R
= 960 V
dI
F
/dt = 200 A/μs
V
R
= 400 V
T
j
= 175 °C
V
R
= 960 V
V
R
= 1 V, f = 1 MHz, T
j
= 25 °C
V
R
= 400 V, f = 1 MHz, T
j
= 25 °C
V
R
= 1000 V, f = 1 MHz, T
j
= 25 °C
min.
Values
typ.
1.6
2.6
5
10
21
35
< 25
260
25
20
max.
1.9
3.0
50
100
Unit
V
µA
nC
ns
pF
Thermal Characteristics
Thermal resistance, junction - case
R
thJC
1.4
°C/W
Aug 2014
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GB05SLT12-252
Figure 1: Typical Forward Characteristics
Figure 2: Typical Reverse Characteristics
Figure 3: Power Derating Curve
Figure 4: Current Derating Curves (D = t
P
/T, t
P
= 400 µs)
(Considering worst case Z
th
conditions )
Figure 5: Typical Junction Capacitance vs Reverse Voltage
Characteristics
Figure 6: Typical Capacitive Energy vs Reverse Voltage
Characteristics
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GB05SLT12-252
Figure 7: Current vs Pulse Duration Curves at T
C
= 155 °C
Figure 8: Transient Thermal Impedance
Package Dimensions:
TO-252
PACKAGE OUTLINE
0.265 (6.73)
0.250 (6.35)
0.215 (5.46)
0.205 (5.21)
0.094 (2.38)
0.086 (2.19)
0.080 (2.03)
0.055 (1.40)
0.05 (1.27)
0.04 (1.02)
0.023 (0.58)
0.018 (0.46)
SEATING
PLANE
0.12 (3.05)
min
0.352 (8.95)
0.060 (1.52)
0.045 (1.15)
0.002 (0.05)
0.020 (0.51) min
0.15 (3.81)
min
0.410 (10.42)
0.371 (9.40)
0.228 (5.80)
0.210 (5.33)
GB05SLT12-252
XXXXXX
Lot Code
0.045 (1.14)
0.030 (0.76)
0.090 (2.285)
0.180 (4.57)
0.035 (0.88)
0.025 (0.64)
0.023 (0.58)
0.018 (0.46)
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
3. CONTROLLED LEAD COPLANARITY <D> 0.004 INCH MAXIMUM
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GB05SLT12-252
Revision History
Date
2014/08/26
2013/02/05
2012/05/22
2010/12/14
Revision
3
2
1
0
Comments
Updated Electrical Characteristics
Second generation update
Second generation release
Initial release
Supersedes
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.
Aug 2014
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GB05SLT12-252
SPICE Model Parameters
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/images/products_sic/rectifiers/GB05SLT12-252_SPICE.pdf)
into
LTSPICE (version 4) software for simulation of the GB05SLT12-252.
*
MODEL OF GeneSiC Semiconductor Inc.
*
*
$Revision:
1.0
$
*
$Date:
04-SEP-2013
$
*
*
GeneSiC Semiconductor Inc.
*
43670 Trade Center Place Ste. 155
*
Dulles, VA 20166
*
*
COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.
*
ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of GB05SLT12-252 SPICE Model
*
.SUBCKT GB05SLT12 ANODE KATHODE
R1 ANODE INT R=((TEMP-24)*0.0015); Temperature Dependant Resistor
D1 INT KATHODE GB05SLT12_25C; Call the 25C Diode Model
D2 ANODE KATHODE GB05SLT12_PIN; Call the PiN Diode Model
.MODEL GB05SLT12_25C D
+ IS
5.83E-18
RS
0.1276
+ N
1
IKF
602
+ EG
1.2
XTI
3
+ CJO
3.00E-10
VJ
0.419
+ M
1.6
FC
0.5
+ TT
1.00E-10
BV
1200
+ IBV
1.00E-03
VPK
1200
+ IAVE
5
TYPE
SiC_Schottky
+ MFG
GeneSiC_Semiconductor
.MODEL GB05SLT12_PIN D
+ IS
3.50 E-12
RS
0.3648
+ N
4.409
IKF
73
+ EG
3.23
XTI
-6
+ FC
0.5
TT
0
+ BV
1200
IBV
1.00E-03
+ VPK
1200
IAVE
1
+ TYPE
SiC_PiN
.ENDS
*
* End of GB05SLT12-252 SPICE Model
Sep 2013
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