MBRH20020 thru MBRH20040R
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 20 V to 40 V V
RRM
• Not ESD Sensitive
D-67 Package
V
RRM
= 20 V - 40 V
I
F(AV)
= 200 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MBRH20020(R) MBRH20030(R) MBRH20035(R) MBRH20040(R)
20
14
20
-55 to 150
-55 to 150
30
21
30
-55 to 150
-55 to 150
35
25
35
-55 to 150
-55 to 150
40
28
40
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current
(per pkg)
Peak forward surge current
Maximum instantaneous
forward voltage
Maximum instantaneous
reverse current at rated DC
blocking voltage
Symbol
I
F(AV)
I
FSM
V
F
I
R
Conditions
T
C
= 125 °C
t
p
= 8.3 ms, half sine
I
FM
= 200 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 100 °C
T
j
= 150 °C
MBRH20020(R) MBRH20030(R) MBRH20035(R) MBRH20040(R)
200
3000
0.70
1
10
50
0.35
200
3000
0.70
1
10
50
0.35
200
3000
0.70
1
10
50
0.35
200
3000
0.70
1
10
50
0.35
Unit
A
A
V
mA
Thermal characteristics
Thermal resistance, junction-
case
R
ΘJC
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1
MBRH20020 thru MBRH20040R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
www.genesicsemi.com/silicon-products/schottky-rectifiers/
3
51单片机
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