MBR12020CT thru MBR12040CTR
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 20 V to 40 V V
RRM
• Not ESD Sensitive
Twin Tower Package
V
RRM
= 20 V - 40 V
I
F(AV)
= 120 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak
reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MBR12020CT(R) MBR12030CT(R) MBR12035CT(R) MBR12040CT(R)
20
14
20
-55 to 150
-55 to 150
30
21
30
-55 to 150
-55 to 150
35
25
35
-55 to 150
-55 to 150
40
28
40
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward
current (per pkg)
Peak forward surge
current (per leg)
Maximum forward
voltage (per leg)
Reverse current at
rated DC blocking
voltage (per leg)
Thermal resistance,
junction-case,
per leg
Symbol
I
F(AV)
I
FSM
V
F
Conditions
T
C
= 125 °C
t
p
= 8.3 ms, half sine
I
FM
= 60 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 100 °C
T
j
= 150 °C
MBR12020CT(R) MBR12030CT(R) MBR12035CT(R) MBR12060CT(R)
120
800
0.70
1
10
30
120
800
0.70
1
10
30
120
800
0.70
1
10
30
120
800
0.70
1
10
30
Unit
A
A
V
I
R
mA
Thermal characteristics
R
ΘJC
0.80
0.80
0.80
0.80
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1
MBR12020CT thru MBR12040CTR
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
www.genesicsemi.com/silicon-products/schottky-rectifiers/
3
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