MBRT40020 thru MBRT40040R
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 20 V to 40 V V
RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Three Tower Package
V
RRM
= 20 V - 40 V
I
F(AV)
= 400 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MBRT40020(R) MBRT40030(R) MBRT40035(R) MBRT40040(R) Unit
20
14
20
-55 to 150
-55 to 150
30
21
30
-55 to 150
-55 to 150
35
25
35
-55 to 150
-55 to 150
40
28
40
-55 to 150
-55 to 150
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current (per
pkg)
Peak forward surge current (per
leg)
Maximum instantaneous forward
voltage (per leg)
Maximum Instantaneous reverse
current at rated DC blocking
voltage (per leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
Conditions
T
C
=125 °C
t
p
= 8.3 ms, half sine
I
FM
= 200 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 100 °C
T
j
= 150 °C
R
ΘJC
MBRT40020(R) MBRT40030(R) MBRT40035(R) MBRT40040(R) Unit
400
3000
0.70
1
10
50
0.35
400
3000
0.70
1
10
50
0.35
400
3000
0.70
1
10
50
0.35
400
3000
0.70
1
10
50
0.35
°C/W
A
A
V
mA
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1
MBRT40020 thru MBRT40040R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
www.genesicsemi.com/silicon-products/schottky-rectifiers/
3
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