MBRH30030(R)L
Low V
F
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Type 30 V V
RRM
• Not ESD Sensitive
D-67 Package
V
RRM
= 30 V
I
F(AV)
= 300 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MBRH30030(R)L
30
21
30
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current
Peak forward surge current
Maximum instantaneous forward voltage
Maximum instantaneous reverse
current at rated DC blocking voltage
Symbol
I
F(AV)
I
FSM
V
F
I
R
Conditions
T
C
= 100 °C
t
p
= 8.3 ms, half sine
I
FM
= 300 A, Tj = 25 °C
T
j
= 25 °C
T
j
= 100 °C
MBRH30030(R)L
300
4000
0.58
3
250
Unit
A
A
V
mA
Thermal characteristics
Maximum thermal resistance,
junction - case
R
ΘJC
0.28
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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MBRH30030(R)L
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
D
G
F
K
E
B
H
C
J
A
L
Inches
Min
A
B
C
D
E
F
G
H
J
K
L
0.540
0.156
0.480
0.120
0.580
0.160
0.492
0.130
1.515
0.725
0.595
1.182
0.736
0.152
Max
1.560
0.775
0.625
1.192
0.744
0.160
1/4–20 UNC
13.72
3.96
12.20
3.05
Min
38.48
18.42
15.11
30.02
18.70
3.86
Millimeters
Max
39.62
19.69
15.88
30.28
18.90
4.061
14.73
4.06
12.50
3.30
www.genesicsemi.com/silicon-products/schottky-rectifiers/
3
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