MBRTA60045 thru MBRTA600100R
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100 V V
RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Heavy Three Tower Package
V
RRM
= 45 V - 100 V
I
F(AV)
= 600 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MBRTA60045(R) MBRTA60060(R)MBRTA60080(R)MBRTA600100(R) Unit
45
32
45
-55 to 150
-55 to 150
60
42
60
-55 to 150
-55 to 150
80
56
80
-55 to 150
-55 to 150
100
70
100
-55 to 150
-55 to 150
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current
(per pkg)
Peak forward surge current
(per leg)
Maximum instantaneous
forward voltage (per leg)
Reverse current at rated
DC blocking voltage (per
leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
Conditions
T
C
= 100 °C
t
p
= 8.3 ms, half sine
I
FM
= 300 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 100 °C
T
j
= 150 °C
MBRTA60045(R) MBRTA60060(R)MBRTA60080(R)MBRTA600100(R) Unit
600
4000
0.70
1
10
50
0.28
600
4000
0.75
1
10
50
0.28
600
4000
0.84
1
10
50
0.28
600
4000
0.84
1
10
50
0.28
A
A
V
mA
Thermal characteristics
Thermal resistance,
junction - case (per leg)
R
ΘJC
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1
MBRTA60045 thru MBRTA600100R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
www.genesicsemi.com/silicon-products/schottky-rectifiers/
3
微控制器 MCU
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