MBRTA600150 thru MBRTA600200R
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 150 V to 200 V V
RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Heavy Three Tower Package
V
RRM
= 150 V - 200 V
I
F(AV)
= 600 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MBRTA600150(R)
150
106
150
-55 to 150
-55 to 150
MBRTA600200(R)
200
141
200
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current (per
pkg)
Peak forward surge current
(per leg)
Maximum instantaneous
forward voltage (per leg)
Reverse current at rated DC
blocking voltage (per leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
Conditions
T
C
= 100 °C
t
p
= 8.3 ms, half sine
I
FM
= 300 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 100 °C
T
j
= 150 °C
MBRTA600150(R)
600
4000
0.88
4
10
50
0.28
MBRTA600200(R)
600
4000
0.92
4
10
50
0.28
Unit
A
A
V
mA
Thermal characteristics
Thermal resistance, junction -
case (per leg)
R
ΘJC
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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MBRTA600150 thru MBRTA600200R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
www.genesicsemi.com/silicon-products/schottky-rectifiers/
3
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