Low VF/ESD Leaded Schottky Barrier Rectifiers
SB120E-G thru SB1100E-G
Voltage Range:
20
to 100 V
Current:
1.0
A
"-G" : RoHS Device
FEATURES
• Low drop down voltage
• 1.0A operation at T
A
=75°C with no thermal runaway
• For use in low voltage, high frequency invertors free
wheeling and polarity protection
• Silicon epitaxial planar chips
• Electrostatic discharge (ESD) test under IEC61000-4-2:
standard: >15KV (air) & >8KV (contact)
• Lead-free part, meet RoHS requirements
DO-41
1.0(25.4) Min.
.107(2.7)
.080(2.0)
.205(5.2)
.160(4.1)
MECHANICAL DATA
• Case: Molded plastic body DO-41
• Epoxy: UL94-V0 rated flame retardant
• Terminals: Solderable per MIL-STD-750 Method 2026
• Polarity: Color band denotes cathode end
• Mounting Position: Any
• Weight: 0.012 ounces, 0.34 grams
1.0(25.4) Min.
.034(0.86)
.028(0.70)
Unit :inch(mm)
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
Symbols
1
20E 140E 145E 150E 160E 180E 1100E
Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.375” (9.5mm) lead length at T
A
=75°C,
See Figure 1
Peak Forward Surge Current
8.3mS single half sine-wave superimp osed on
rated load (JEDEC Me thod) T
L
=110°C
V
RRM
V
RMS
V
DC
20
14
2
0
40
28
40
45
30
45
50
35
50
60
42
60
80
56
80
100
70
100
Volts
Volts
Volts
I
AV
1.0
Amps
I
FSM
V
F
30
0.50
0.70
0.5
10
110
Amps
0.85
Volts
Maximum Forward Voltage at 1.0A (Note 1)
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction Temperature Range
Storage Temperature Range
Note
1. Pulse test: 300µS pu lse wi dth, 1% du ty cy cle
T
A
=
25°C
T
A
=100
°C
I
R
C
J
R
θJA
R
θJL
T
J
T
STG
5
mA
pF
80.0
30.0
-65 ~ +125
-65 ~ +150
-65 ~ +150
°C/W
°C
°C
2. Me asured at 1.0MH z an d ap plied reverse vo ltage of 4.0 Volts
3. Therma l resistance from junction to am bient and from junction to lead P.C.B. mo unted 0. 375” (9.5mm ) lead length
MDS0906002A
Page 1
Low VF/ESD Leaded Schottky Barrier Rectifiers
RATINGS AND CHARACTERISTIC CURVES
SB120E-G thru SB1100E-G
Fig.1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current
100
Average Forward Current (A)
1.2
1.0
0.8
SB120E - SB145E
0.6
0.4
0.2
SB150E - SB1100E
single phase half wave 60Hz
resistive or inductive load
3.75”(9.5mm) lead length
Peak Forward Surge Current (A)
10
T
L
=110°C
8.3mS single half sine-wave
(JEDEC Method)
1
1
10
100
0
25
50
75
100
125
150
175
Lead Temperature ( °C)
Number of Cycles at 60 Hz
10
Instantaneous Reverse Current (mA)
Fig. 3 - Typical Instantaneour Forward
Characteristics
Fig. 4A - Typical Reverse Characteristics
100
SB120E - SB145E
Instantaneous Forward Current (A)
pulse width =300µS
1% duty cycle, T
j
=25°C
10
T
J
=125°C
1.0
T
J
=75°C
0.1
1.0
SB120E - SB145E
0.1
SB150E - SB160E
0.01
T
J
=25°C
SB180E - SB1100E
0.01
0
0.2
0.4
0.6
0.8
1.0
0.001
0
20
40
60
80
100
120
140
Instantaneous Forward Voltage (Volts)
Percent of Rated Peak Reverse Voltage ( %)
Fig. 5 - Typical Junction Capacitance
1000
Fig. 4B - Typeical Reverse Characteristic
Instantaneous Reverse Current (µA)
1000
SB150E - SB1100E
100
Junction Capacitance (pF)
T
J
=150°C
T
J
=125°C
10
1.0
T
J
=100°C
100
T
J
=25°C
f=1.0MHz
10
0.1
1.0
10
100
0.1
T
J
=25°C
0.01
0
20
40
60
80
100
Reverse Voltage (Volts)
Percent of Rated Peak Reverse Voltage ( %)
MDS0906002A
Page 2
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