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BR802

产品描述6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小70KB,共2页
制造商Chenda
官网地址http://www.szchenda.com
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BR802概述

6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

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BR8005 THRU BR810
SILICON BRIDGE RECTIFIERS
Reverse Voltage - 50 to 1000 Volts
Forward Current - 8.0 Amperes
BR-8
FEATURES
0.30(7.60)
0.25(6.35)
0.052(1.3) DIA.
0.048(1.2) TYP.
0.750
(19.1)
MIN.
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Ideal for printed circuit boards
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds,at 5 lbs. (2.3kg) tension
0.770(19.6)
0.730(18.5)
0.52(13.2)
0.48(12.2)
HOLE FOR
NO.6 SCREW
MECHANICAL DATA
Case:
Molded plastic body
Terminals:
Plated leads solderable per MIL-STD-750,
Method 2026
Polarity:
Polarity symbols marked on case
Mounting:Thru
hole for #6 serew,5in.-lbs. torque max.
Weight:0.20o
unce, 5.62 grams
AC
0.52(13.2)
0.48(12.2)
0.770(19.6)
0.730(18.5)
AC
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
SYMBOLS
BR8005
BR801
BR802
BR804
BR806
BR808
BR810
UNITS
VOLTS
VOLTS
VOLTS
Amps
V
RRM
Maximum repetitive peak reverse voltage
50
100
200
400
600
V
RMS
Maximum RMS voltage
35
70
140
280
420
V
DC
Maximum DC blocking voltage
50
100
200
400
600
Maximum average
T
C
=50 C (Note 1)
8.0
I
(AV)
forward output
T
C
=100 C (Note 1)
6.0
rectified current at
T
A
=50 C (Note 2)
6.0
Peak forward surge current
I
FSM
8.3ms single half sine-wave superimposed on
125.0
rated load (JEDEC Method)
Rating for Fusing(t<8.3ms)
64
I
2
t
Maximum instantaneous forward voltage drop
V
F
1.1
per bridge element at 4.0A
Maximum DC reverse current
T
A
=25 C
10
I
R
at rated DC blocking voltage
T
A
=100 C
1.0
Isolation voltage from case to leads
2500
V
ISO
Typical Thermal Resistance (Note 1)
6.0
R
θ
JA
Operating junction temperature range
-55 to +125
T
J
storage temperature range
-55 to +150
T
STG
NOTES:
1.Unit mounted on 8.7” x 8.7” x0.24” thick(22x22x0.6cm)Al.plate.
2.Unit mounted on P.C. board with 0.47” x 0.47”(12x12mm) copper pads,0.375”
800
560
800
1000
700
1000
Amps
A
2
s
Volts
µ
A
mA
V
AC
C/W
C
C
MDD ELECTRONIC

BR802相似产品对比

BR802 BR8005 BR801 BR804 BR806 BR808 BR810
描述 6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE

 
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