SOT-23 Plastic-Encapsulate MOSFETS
SI2306
N-Channel 30-V(D-S) MOSFET
SOT-23
FEATURE
TrenchFET Power MOSFET
Notes :
a. Surface Mounted on 1”
×1”
FR4 board, t≤5s.
b. Pulse width limited by maximum junction temperature.
M
APPLICATIONS
Load Switch for Portable Devices
DC/DC Converter
MARKING:
*6**
Maximum ratings (at T
A
=25℃ unless otherwise noted)
Drain-Source voltage
Gate-Source Voltage
Continuous Drain Current (T
J
=150℃)
a,b
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
a,b
Maximum Power Dissipation
a,b
Thermal Resistance from Junction to Ambient (t≤5s)
Operating Junction and
Storage
Temperature Range
O
AK
1. GATE
2. SOURCE
3. DRAIN
SE
Parameter
IC
M
O
N
MAKO SEMICONDUCTOR CO.,LIMITED
D
U
CT
Symbol
V
DS
I
D
I
DM
I
S
P
D
R
θJA
T
J,
T
stg
Value
30
±20
3.16
20
0.62
0.75
Unit
V
O
R
V
GS
A
W
℃/W
℃
CO
100
-55 to150
.,L
IM
E
IT
D
A,May,2013
Electrical characteristics (at T
A
=25℃ unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
a
Forward Transconductance
a
Diode Forward Voltage
Dynamic
V
(BR)DS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
V
SD
V
GS
= 0V, I
D
=250µA
V
DS
=V
GS
, I
D
=250µA
V
DS
=0V, V
GS
=±20V
V
DS
=30V, V
GS
=0V
V
GS
=10V, I
D
=3.5A
V
GS
=4.5V, I
D
=2.8A
V
DS
=4.5V, I
D
=2.5A
I
S
=1.25A,V
GS
=0V
0.038
0.052
7.0
0.8
1.2
30
1.0
3.0
±100
0.5
0.047
0.065
V
nA
µA
Ω
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes :
a.Pulse Test : Pulse Width≤300µs, duty cycle
≤2%.
M
O
AK
Q
g
Q
gt
Q
gs
Q
gd
R
g
C
iss
V
DS
=15V,V
GS
=5V,I
D
=2.5A
3.0
6
4.5
9
nC
SE
M
IC
V
DS
=15V,V
GS
=10V,I
D
=2.5A
1.6
0.6
f =1.0MHz
2.5
5
305
65
29
7.5
Ω
N
O
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
=15V,V
GS
=0V,f =1MHz
pF
MAKO SEMICONDUCTOR CO.,LIMITED
D
V
DD
=15V,
R
L
=15Ω,
I
D
≈1A,
V
GEN
=10V,Rg=6Ω
U
CT
R
O
7
12
14
6
11
18
25
10
ns
.,L
CO
IM
E
IT
D
A,May,2013
电子竞赛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
